Temperature dependence of trap creation in silicon dioxideDIMARIA, D. J.Journal of applied physics. 1990, Vol 68, Num 10, pp 5234-5246, issn 0021-8979, 13 p.Article

Hole trapping, substrate currents, and breakdown in thin silicon dioxide filmsDIMARIA, D. J.IEEE electron device letters. 1995, Vol 16, Num 5, pp 184-186, issn 0741-3106Article

A permeable-base switching device using stacked layers of silicon, silicon dioxide, and silicon-rich silicon dioxideDIMARIA, D. J; ARIENZO, M.I.E.E.E. transactions on electron devices. 1987, Vol 34, Num 8, pp 1762-1767, issn 0018-9383, 1Article

Theory of the current-field relation in silicon-rich silicon dioxideAMIRAM RON; DIMARIA, D. J.Physical review. B, Condensed matter. 1984, Vol 30, Num 2, pp 807-812, issn 0163-1829Article

Impact ionization, trap creation, degradation, and breakdown in silicon dioxide films on siliconDIMARIA, D. J; CARTIER, E; ARNOLD, D et al.Journal of applied physics. 1993, Vol 73, Num 7, pp 3367-3384, issn 0021-8979Article

Acoustic-phonon runaway and impact ionization by hot electrons in silicon dioxideARNOLD, D; CARTIER, E; DIMARIA, D. J et al.Physical review. B, Condensed matter. 1992, Vol 45, Num 3, pp 1477-1480, issn 0163-1829Article

Electron heating in silicon nitride and silicon oxynitride filmsDIMARIA, D. J; ABERNATHEY, J. R.Journal of applied physics. 1986, Vol 60, Num 5, pp 1727-1729, issn 0021-8979Article

Energy band-gap discontinuities in GaAs:(Al,Ga)As heterojunctionsBATEY, J; WRIGHT, S. L; DIMARIA, D. J et al.Journal of applied physics. 1985, Vol 57, Num 2, pp 484-487, issn 0021-8979Article

Quantum Monte Carlo simulation of high-field electron transport: an application to silicon dioxideFISCHETTI, M. V; DIMARIA, D. J.Physical review letters. 1985, Vol 55, Num 22, pp 2475-2478, issn 0031-9007Article

Degradation and breakdown of silicon dioxide films on siliconDIMARIA, D. J; ARNOLD, D; CARTIER, E et al.Applied physics letters. 1992, Vol 61, Num 19, pp 2329-2331, issn 0003-6951Article

Trapping and trap creation studies on nitrided and reoxidized-nitrided silicon dioxide films on siliconDIMARIA, D. J; STATHIS, J. H.Journal of applied physics. 1991, Vol 70, Num 3, pp 1500-1509, issn 0021-8979Article

Impact ionization and positive charge formation in silicon dioxide films on siliconDIMARIA, D. J; ARNOLD, D; CARTIER, E et al.Applied physics letters. 1992, Vol 60, Num 17, pp 2118-2120, issn 0003-6951Article

Interface and bulk trap generation in metal-oxide-semiconductor capacitorsBUCHANAN, D. A; DIMARIA, D. J.Journal of applied physics. 1990, Vol 67, Num 12, pp 7439-7452, issn 0021-8979Article

Vacuum emission of hot electrons from silicon dioxide at low temperaturesDIMARIA, D. J; FISCHETTI, M. V.Journal of applied physics. 1988, Vol 64, Num 9, pp 4683-4691, issn 0021-8979Article

Coulombic and neutral trapping centers in silicon dioxideBUCHANAN, D. A; FISCHETTI, M. V; DIMARIA, D. J et al.Physical review. B, Condensed matter. 1991, Vol 43, Num 2, pp 1471-1486, issn 0163-1829, 16 p.Article

Optimized silicon-rich oxide (SRO) deposition process for 5-V-only flash EEPROM applicationsDORI, L; ACOVIC, A; DIMARIA, D. J et al.IEEE electron device letters. 1993, Vol 14, Num 6, pp 283-285, issn 0741-3106Article

Electron heating studies in silicon dioxide: low fields and thick filmsDIMARIA, D. J; FISCHETTI, M. V; ARIENZO, M et al.Journal of applied physics. 1986, Vol 60, Num 5, pp 1719-1726, issn 0021-8979Article

Direct observation of ballistic electrons in silicon dioxideDIMARIA, D. J; FISCHETTI, M. V; BATEY, J et al.Physical review letters. 1986, Vol 57, Num 25, pp 3213-3216, issn 0031-9007Article

Direct measurement of the energy distribution of hot electrons in silicon dioxideBRORSON, S. D; DIMARIA, D. J; FISCHETTI, M. V et al.Journal of applied physics. 1985, Vol 58, Num 3, pp 1302-1313, issn 0021-8979Article

Electron heating in silicon dioxide and off-stoichiometric silicon dioxide filmsDIMARIA, D. J; THEIS, T. N; KIRTLEY, J. R et al.Journal of applied physics. 1985, Vol 57, Num 4, pp 1214-1238, issn 0021-8979Article

Electroluminescence studies in silicon dioxide films containing tiny silicon islandsDIMARIA, D. J; KIRTLEY, J. R; PAKULIS, E. J et al.Journal of applied physics. 1984, Vol 56, Num 2, pp 401-416, issn 0021-8979Article

Oxide scaling limit for future logic and memory technologySTATHIS, J. H; DIMARIA, D. J.Microelectronic engineering. 1999, Vol 48, Num 1-4, pp 395-401, issn 0167-9317Conference Paper

Thin-oxide dual-electron-injector annealing studies using conductivity and electron energy-loss spectroscopyDORI, L; BRULEY, J; DIMARIA, D. J et al.Journal of applied physics. 1991, Vol 69, Num 4, pp 2317-2323, issn 0021-8979Article

Electroluminescence emission from indium oxide and indium-tin-oxideFALCONY, C; KIRTLEY, J. R; DIMARIA, D. J et al.Journal of applied physics. 1985, Vol 58, Num 9, pp 3556-3558, issn 0021-8979Article

Ballistic electron transport in thin silicon dioxide filmsFISCHETTI, M. V; DIMARIA, D. J; DORI, L et al.Physical review. B, Condensed matter. 1987, Vol 35, Num 9, pp 4404-4415, issn 0163-1829Article