CAPTURE AND RELEASE OF ELECTRONS ON NA⁺-RELATED TRAPPING SITES IN THE SIO₂ LAYER OF METAL-OXIDE-SEMICONDUCTOR STRUCTURES AT TEMPERATURES BETWEEN 77^O AND 296^OKDIMARIA DJ.1981; J. APPL. PHYS.; ISSN 0021-8979; USA; DA. 1981; VOL. 52; NO 12; PP. 7251-7260; BIBL. 51 REF.Article

DETERMINATION OF INSULATOR BULK TRAPPED CHARGE DENSITIES AND CENTROIDS FROM PHOTOCURRENT-VOLTAGE CHARACTERISTICS OF MOS STRUCTURES.DIMARIA DJ.1976; J. APPL. PHYS.; U.S.A.; DA. 1976; VOL. 47; NO 9; PP. 4073-4077; BIBL. 15 REF.Article

GRADED OR STEPPED ENERGY BAND-GAP-INSULATOR MIS STRUCTURES (GI-MIS OR SI-MIS)DIMARIA DJ.1979; J. APPL. PHYS.; ISSN 0021-8979; USA; DA. 1979; VOL. 50; NO 9; PP. 5826-5829; BIBL. 20 REF.Article

EFFECTS ON INTERFACE BARRIER ENERGIES OF METAL-ALUMINUM OXIDE-SEMICONDUCTOR (MAS) STRUCTURES AS A FUNCTION OF METAL ELECTRODE MATERIAL, CHARGE TRAPPING, AND ANNEALING.DIMARIA DJ.1974; J. APPL. PHYS.; U.S.A.; DA. 1974; VOL. 45; NO 12; PP. 5454-5456; BIBL. 10 REF.Article

EFFECT OF FORMING GAS ANNEAL ON AL-SIO₂ INTERNAL PHOTOEMISSION CHARACTERISTICSSOLOMON PM; DIMARIA DJ.1981; J. APPL. PHYS.; ISSN 0021-8979; USA; DA. 1981; VOL. 52; NO 9; PP. 5867-5869; BIBL. 7 REF.Article

HOLE TRAPPING IN THE BULK OF SIO₂ LAYERS AT ROOM TEMPERATUREDEKEERESMAECKER RF; DIMARIA DJ.1980; J. APPL. PHYS.; ISSN 0021-8979; USA; DA. 1980; VOL. 51; NO 1; PP. 532-539; BIBL. 21 REF.Article

CONDUCTION STUDIES IN SILICON NITRIDE: DARK CURRENTS AND PHOTOCURRENTS.DIMARIA DJ; ARNETI PC.1977; I.B.M. J. RES. DEVELOP.; U.S.A.; DA. 1977; VOL. 21; NO 3; PP. 227-244; BIBL. 48 REF.Article

PARAMETER DEPENDENCE OF RIE INDUCED RADIATION DAMAGE IN SILICON DIOXIDEEPHRATH LM; DIMARIA DJ; PESAVENTO FL et al.1981; J. ELECTROCHEM. SOC.; ISSN 0013-4651; USA; DA. 1981; VOL. 128; NO 11; PP. 2415-2419; BIBL. 23 REF.Article

LOCATION OF POSITIVE CHARGES IN SIO₂ FILMS ON SI GENERATED BY VUV PHOTONS, X RAYS, AND HIGH-FIELD STRESSING.DIMARIA DJ; WEINBERG ZA; AITKEN JM et al.1977; J. APPL. PHYS.; U.S.A.; DA. 1977; VOL. 48; NO 3; PP. 898-906; BIBL. 60 REF.Article

DUL-ELECTRON-INJECTOR-STRUCTURE ELECTRICALLY ALTERABLE READ-ONLY-MEMORY MODELING STUDIESDIMARIA DJ; DEMEYER KM; DONG DW et al.1981; IEEE TRANS. ELECTRON DEVICES; ISSN 0018-9383; USA; DA. 1981; VOL. 28; NO 9; PP. 1047-1053; BIBL. 19 REF.Article

ELECTRICALLY-ALTERABLE MEMORY USING A DUAL ELECTRON INJECTOR STRUCTUREDIMARIA DJ; DEMEYER KM; DONG DW et al.1980; I.E.E.E. ELECTRON DEVICE LETT.; USA; DA. 1980; VOL. 1; NO 9; PP. 179-181; BIBL. 13 REF.Article

USE OF ELECTRON TRAPPING REGION TO REDUCE LEAKAGE CURRENTS AND IMPROVE BREAKDOWN CHARACTERISTICS OF MOS STRUCTURES.DIMARIA DJ; YOUNG DR; ORMOND DW et al.1977; APPL. PHYS. LETTERS; U.S.A.; DA. 1977; VOL. 31; NO 10; PP. 680-682; BIBL. 11 REF.Article

CAPTURE OF ELECTRONS INTO NA⁺-RELATED TRAPPING SITES IN THE SIO₂ LAYER OF MOS STRUCTURES AT 77^OK.DIMARIA DJ; AITKEN JM; YOUNG DR et al.1976; J. APPL. PHYS.; U.S.A.; DA. 1976; VOL. 47; NO 6; PP. 2740-2743; BIBL. 18 REF.Article

EXPERIMENTAL TEST OF THE QUANTUM-MECHANICAL IMAGE-FORCE THEORYHARTSTEIN A; WEINBERG ZA; DIMARIA DJ et al.1982; PHYSICAL REVIEW. B: CONDENSED MATTER; ISSN 0163-1829; USA; DA. 1982; VOL. 25; NO 12; PP. 7174-7182; BIBL. 12 REF.Article

CAPTURE AND EMISSION OF ELECTRONS AT 2.4-EV-DEEP TRAP LEVEL IN SIO₂ FILMS.DIMARIA DJ; FEIGL FJ; BUTLER SR et al.1975; PHYS. REV.; U.S.A.; DA. 1975; VOL. 11; NO 12; PP. 5023-5030; BIBL. 36 REF.Article

EXTENDED CYCLABILITY IN ELECTRICALLY-ALTERABLE READ-ONLY-MEMORIESDIMARIA DJ; DONG DW; FALCONY C et al.1982; ELECTRON DEVICE LETTERS; ISSN 0193-8576; USA; DA. 1982; VOL. 3; NO 7; PP. 191-195; BIBL. 15 REF.Article

EXCITON OR HYDROGEN DIFFUSION IN SIO₂.WEINBERG ZA; YOUNG DR; DIMARIA DJ et al.1979; J. APPL. PHYS.; ISSN 0021-8979; USA; DA. 1979; VOL. 50; NO 9; PP. 5757-5760; BIBL. 18 REF.Article

ATTENUATED TOTAL REFLECTANCE STUDY OF SILICON-RICH SILICON DIOXIDE FILMSHARTSTEIN A; DIMARIA DJ; DONG DW et al.1980; J. APPL. PHYS.; ISSN 0021-8979; USA; DA. 1980; VOL. 51; NO 7; PP. 3860-3862; BIBL. 15 REF.Article

STUDY OF CHARGE TRAPPING AS A DEGRADATION MECHANISM IN ELECTRICALLY ALTERABLE READ-ONLY-MEMORIESFALCONY C; DIMARIA DJ; DONG DW et al.1982; J. APPL. PHYS.; ISSN 0021-8979; USA; DA. 1982; VOL. 53; NO 1; PP. 43-47; BIBL. 13 REF.Article

LOCATION OF TRAPPED CHARGE IN ALUMINIUM-IMPLANTED SIO₂.DIMARIA DJ; YOUNG DR; HUNTER WR et al.1978; I.B.M. J. RES. DEVELOP.; USA; DA. 1978; VOL. 22; NO 3; PP. 289-293; BIBL. 19 REF.Article

USE OF PHOTOCURRENT-VOLTAGE-CHARACTERISTICS OF MOS STRUCTURES TO DETERMINE INSULATOR BULK TRAPPED CHARGE DENSITIES AND CENTROIDS.DIMARIA DJ; WEINBERG ZA; AITKEN JM et al.1977; J. ELECTRON. MATER.; U.S.A.; DA. 1977; VOL. 6; NO 3; PP. 207-219; BIBL. 11 REF.Article

OBSERVATION OF AMORPHOUS SILICON REGIONS IN SILICON-RICH SILICON DIOXIDE FILMSHARTSTEIN A; TSANG JC; DIMARIA DJ et al.1980; APPL. PHYS. LETT.; ISSN 0003-6951; USA; DA. 1980; VOL. 36; NO 10; PP. 836-837; BIBL. 12 REF.Article

CHARACTERIZATION OF ELECTRON TRAPS IN ALUMINIUM-IMPLANTED SIO₂.YOUNG DR; DIMARIA DJ; HUNTER WR et al.1978; I.B.M. J. RES. DEVELOP.; USA; DA. 1978; VOL. 22; NO 3; PP. 285-288; BIBL. 8 REF.Article

EFFECTS OF ELECTRON-BEAM IRRADIATION ON THE PROPERTIES OF CVD S₃N₄ FILMS IN MNOS STRUCTURES. = EFFETS DE L'IRRADIATION PAR UN FAISCEAU D'ELECTRONS SUR LES PROPRIETES DE COUCHES MINCES DE SI₃N₄ GROSSIES PAR LA METHODE DE CROISSANCE EN PHASE VAPEUR DANS DES STRUCTURES MNOSMA TP; YUN BH; DIMARIA DJ et al.1976; J. APPL. PHYS.; U.S.A.; DA. 1976; VOL. 47; NO 4; PP. 1599-1604; BIBL. 32 REF.Article

A NEW LOW-VOLTAGE SI-COMPATIBLE ELECTROLUMINESCENT DEVICEROBBINS DJ; FALCONY C; DIMARIA DJ et al.1982; ELECTRON DEVICE LETT.; ISSN 0193-8576; USA; DA. 1982; VOL. 3; NO 6; PP. 148-151; BIBL. 17 REF.Article