DRY ETCHING CHALLENGES FINE PROCESSING IN THE SUBMICRON TECHNOLOGYFUJIOKA T.1982; JEE. JOURNAL OF ELECTRONIC ENGINEERING; ISSN 0385-4507; JPN; DA. 1982; VOL. 19; NO 192; PP. 60-64Article

SUBMICRON RESOLUTION PHOTOLITHOGRAPHY BY SPECTRAL SHAPINGVOSHCHENKOV AM; HANSON RC.1982; ELECTRON DEVICE LETTERS; ISSN 0193-8576; USA; DA. 1982; VOL. 3; NO 7; PP. 208-210; BIBL. 7 REF.Article

DEEP UV SUBMICRON LITHOGRAPHY BY USING A PULSED HIGH-POWER EXCIMER LASERKAWAMURA Y; TOYODA K; NAMBA S et al.1982; JOURNAL OF APPLIED PHYSICS; ISSN 0021-8979; USA; DA. 1982; VOL. 53; NO 9; PP. 6489-6490; BIBL. 9 REF.Article

INFLUENCE OF GATE INTERVALS ON THE BEHAVIOUR OF SUBMICRON DUAL-GATE FETSALLAMANDO E; SALMER G; BOUHESS M et al.1982; ELECTRONICS LETTERS; ISSN 0013-5194; GBR; DA. 1982; VOL. 18; NO 18; PP. 791-793; BIBL. 3 REF.Article

ELECTRON-BEAM FABRICATION OF SUBMICROMETER GATES FOR A GAAS MESFET LOGICKATO H; MIZUTANI T; ISHIDA S et al.1980; IEEE TRANS. ELECTRON DEVICES; ISSN 0018-9383; USA; DA. 1980; VOL. 27; NO 6; PP. 1098-1101; BIBL. 10 REF.Article

ALL-DRY VACUUM SUBMICRON LITHOGRAPHYKORCHKOV VP; MARTYNOVA TN; DANILOVICH VS et al.1983; THIN SOLID FILMS; ISSN 0040-6090; CHE; DA. 1983; VOL. 101; NO 4; PP. 369-372; BIBL. 8 REF.Article

ELECTRON-BEAM PROXIMITY PRINTING: A NEW HIGH-SPEED LITHOGRAPHY METHOD FOR SUBMICRON STRUCTURESBOHLEN H; GRESCHNER J; KEYSER J et al.1982; IBM JOURNAL OF RESEARCH AND DEVELOPMENT; ISSN 0018-8646; USA; DA. 1982; VOL. 26; NO 5; PP. 568-579; BIBL. 14 REF.Article

CURRENT EQUATIONS FOR VELOCITY OVERSHOOTTHORNBER KK.1982; ELECTRON DEVICE LETTERS; ISSN 0193-8576; USA; DA. 1982; VOL. 3; NO 3; PP. 69-71; BIBL. 16 REF.Article

A PROPOSAL AND NUMERICAL SIMULATION OF N+NN+ SCHOTTKY DEVICE FOR BALLISTIC AND QUASIBALLISTIC ELECTRON SPECTROSCOPYHESTO P; PONE JF; CASTAGNE R et al.1982; APPL. PHYS. LETT.; ISSN 0003-6951; USA; DA. 1982; VOL. 40; NO 5; PP. 405-406; BIBL. 5 REF.Article

AN OPTIMALLY DESIGNED PROCESS FOR SUBMICROMETER MOSFET'SSHIBATA T; HIEDA K; SATO M et al.1982; IEEE J. SOLID-STATE CIRCUITS; ISSN 0018-9200; USA; DA. 1982; VOL. 17; NO 2; PP. 161-165; BIBL. 14 REF.Article

EXPERIMENTAL RESULTS, ON SUBMICRON-SIZE P-CHANNEL MOSFET'SFICHTNER W; LEVIN RM; TAYLOR GW et al.1982; ELECTRON DEVICE LETT.; ISSN 0193-8576; USA; DA. 1982; VOL. 3; NO 2; PP. 34-37; BIBL. 11 REF.Article

MEASUREMENT OF J/V CHARACTERISTICS OF A GAAS SUBMICRON N⁺-N^--N⁺ DIODEHOLLIS MA; EASTMAN LF; WOOD CEC et al.1982; ELECTRON. LETT.; ISSN 0013-5194; GBR; DA. 1982; VOL. 18; NO 3; PP. 570-572; BIBL. 7 REF.Article

MONTE CARLO PARTICLE SIMULATION OF GAAS SUBMICRON N⁺-I-N⁺ DIODEAWANO Y; TOMIZAWA K; HASHIZUME N et al.1982; ELECTRON. LETT.; ISSN 0013-5194; GBR; DA. 1982; VOL. 18; NO 3; PP. 133-135; BIBL. 5 REF.Article

SUBMICROMETER MOSFET STRUCTURE FOR MINIMIZING HOT-CARRIER GENERATIONTAKEDA E; KUME H; TOYABE T et al.1982; IEEE TRANS. ELECTRON DEVICES; ISSN 0018-9383; USA; DA. 1982; VOL. 29; NO 4; PP. 611-618; BIBL. 19 REF.Article

MATERIALS CONSIDERATIONS FOR ADVANCES IN SUBMICRON VERY LARGE SCALE INTEGRATIONFERRY DK.1982; ADV. ELECTRON. ELECTRON. PHYS.; ISSN 0065-2539; USA; DA. 1982; VOL. 58; PP. 311-390; BIBL. 4 P.Article

SUBMICRON POLYCRYSTAL SILICON FILM SOLAR CELLSFANG PH; SCHUBERT CC; KINNIER JH et al.1981; APPL. PHYS. LETT.; ISSN 0003-6951; USA; DA. 1981; VOL. 39; NO 3; PP. 256-258; BIBL. 13 REF.Article

Towards high volume 1 μm lithographyROTTMANN'S, H.Precision engineering. 1983, Vol 5, Num 4, pp 147-151, issn 0141-6359Article

Phénomènes balistiques et de survitesse dans un composant à semi-conducteur: application à l'étude préliminaire d'un hétéro-transistor balistique = Balistic and overspeed phenomena in a semiconductor component: application to the preliminary study of a balistic heterotransistorGHIS, Anne.1983, 134 pThesis

ETCHED PROFILE OF SI BY ION-BOMBARDMENT-ENHANCED ETCHINGMORIWAKI K; ARITOME H; NAMBA S et al.1981; JPN. J. APPL. PHYS.; ISSN 0021-4922; JPN; DA. 1981; VOL. 20; NO 7; PP. 1305-1309; BIBL. 7 REF.Article

A PILE-UP MASKING TECHNIQUE FOR THE FABRICATION OF SUB-HALF-MICRON GATE LENGTH GAAS MESFET'SCHAO PC; KU WH; LOWE C et al.1982; ELECTRON DEVICE LETT.; ISSN 0193-8576; USA; DA. 1982; VOL. 3; NO 10; PP. 286-288; BIBL. 10 REF.Article

Modélisation numérique bidimensionnelle en éléments finis des transistors à barrière de Schottky sur arséniure de gallium en hyperfréquences = A two-dimensional, numerical, finite-element modelization of Schottky-barrier transistors on gallium arsenide at microwaveAPERCE, Gilles.1983, 156 fThesis

Three-dimensional Monte Carlo simulations. I: Implanted profiles for dopants in submicron deviceMAZZONE, A. M; ROCCA, G.IEEE transactions on computer-aided design of integrated circuits and systems. 1984, Vol 3, Num 1, pp 64-71, issn 0278-0070Article

CHACTERIZATION METHODS FOR SUBMICRON DIAMETER MAGNETIC BUBBLESHOSOE Y; OHTA N; SUGITA Y et al.1982; IEEE TRANS. MAGN.; ISSN 0018-9464; USA; DA. 1982; VOL. 18; NO 2; PP. 749-752; BIBL. 6 REF.Article

PROCEEDINGS/SUBMICRON LITHOGRAPHY, CONFERENCE, SANTA CLARA CA, MARCH 29-30, 1982BLAIS PD ED.1982; SUBMICRON LITHOGRAPHY. CONFERENCE/1982-03-29/SANTA CLARA CA; USA; BELLINGHAM: THE SOCIETY OF PHOTO-OPTICAL ENGINEERING; DA. 1982; 187 P.; 28 CM; ISBN 0-89252-368-9; SPIE PROCEEDINGS; 333Conference Proceedings

SUBMICRON GATE GAAS/AL_0.3GA_0.7AS MESFET'S WITH EXTREMELY SHARP INTERFACES (40 A)MORKOC H; KOPP WF; DRUMMOND TJ et al.1982; IEEE TRANS. ACOUST. SPEECH SIGNAL PROCESS.; ISSN 0096-3518; USA; DA. 1982; VOL. 29; NO 6; PP. 1013-1018; BIBL. 15 REF.Article