Evaluation of grain boundary recombination velocity in polycrystalline silicon from the spectral response of Schottky-barrier solar cellsDIMITRIADIS, C. A.I.E.E.E. transactions on electron devices. 1986, Vol 33, Num 11, pp 1806-1808, issn 0018-9383Article

Effect of doping concentration on the performance of large-grain polycrystalline silicon solar cellDIMITRIADIS, C. A.Journal of applied physics. 1986, Vol 59, Num 6, pp 2259-2261, issn 0021-8979Article

Experimental study of self-heating in undoped polycrystalline silicon thin filmsDIMITRIADIS, C. A.Journal of applied physics. 1990, Vol 68, Num 2, pp 862-864, issn 0021-8979, 3 p.Article

Evaluation of grain boundary recombination velocity in polycrystalline silicon from the spectral response of Schottky-barrier solar cellsDIMITRIADIS, C. A.I.E.E.E. transactions on electron devices. 1986, Vol 33, Num 11, pp 1806-1808, issn 0018-9383Article

Recombination efficiency of single dislocations in GaPDIMITRIADIS, C. A.Solid state communications. 1984, Vol 49, Num 12, pp 1111-1112, issn 0038-1098Article

Grain boundary trap distribution in polycrystalline silicon thin-film transistorsDIMITRIADIS, C. A.Journal of applied physics. 1993, Vol 73, Num 8, pp 4086-4088, issn 0021-8979Article

Short-circuit current of polycrystalline silicon solar cells with respect to grain size and grain-boundary recombination velocityDIMITRIADIS, C. A.Journal of applied physics. 1986, Vol 59, Num 2, pp 660-662, issn 0021-8979Article

Influence of dislocations on the performance of solar cells made from large-grain polysiliconDIMITRIADIS, C. A.Journal of physics. D, Applied physics (Print). 1985, Vol 18, Num 12, pp 2489-2495, issn 0022-3727Article

Carrier recombination at dislocations in epitaxial gallium phosphide layersDIMITRIADIS, C. A.Solid-state electronics. 1983, Vol 26, Num 7, pp 633-637, issn 0038-1101Article

Galvanomagnetic behavior of semiconducting FeSi₂ filmsVALASSIADES, O; DIMITRIADIS, C. A; WERNER, J. H et al.Journal of applied physics. 1991, Vol 70, Num 2, pp 890-893, issn 0021-8979Article

Low frequency noise in intrinsic low pressure chemical vapour deposited polysilicon resistorsDIMITRIADIS, C. A; BRINI, J; KAMARINOS, G et al.EPJ. Applied physics (Print). 1998, Vol 3, Num 3, pp 283-285, issn 1286-0042Conference Paper

Resistivity dependence of the minority carrier diffusion length in single crystals of Cu₂ODIMITRIADIS, C. A; PAPADIMITRIOU, L; ECONOMOU, N. A et al.Journal of materials science letters. 1983, Vol 2, Num 11, pp 691-693, issn 0261-8028Article

Trap centers in cuprous oxidePAPADIMITRIOU, L; DIMITRIADIS, C. A; DOZSA, L et al.Solid-state electronics. 1988, Vol 31, Num 10, pp 1477-1482, issn 0038-1101Article

Analytical unified threshold voltage model of short-channel FinFETs and implementationFASARAKIS, N; TSORMPATZOGLOU, A; TASSIS, D. H et al.Solid-state electronics. 2011, Vol 64, Num 1, pp 34-41, issn 0038-1101, 8 p.Article

Experimental characterization of the subthreshold leakage current in triple-gate FinFETsTSORMPATZOGLOU, A; DIMITRIADIS, C. A; MOUIS, M et al.Solid-state electronics. 2009, Vol 53, Num 3, pp 359-363, issn 0038-1101, 5 p.Article

Current-voltage and noise characteristics of reverse-biased Au/n-GaAs Schottky diodes with embedded InAs quantum dotsARPATZANIS, N; TASSIS, D. H; DIMITRIADIS, C. A et al.Semiconductor science and technology. 2007, Vol 22, Num 10, pp 1086-1091, issn 0268-1242, 6 p.Article

Dynamic hot-carrier induced degradation in n-channel polysilicon thin-film transistorsTASSIS, D. H; HATZOPOULOS, A. T; ARPATZANIS, N et al.Microelectronics and reliability. 2006, Vol 46, Num 12, pp 2032-2037, issn 0026-2714, 6 p.Article

Thickness dependent formation and properties of GdSi₂/Si(100) interfacesPETÖ, G; MOLNAR, G; DOZSA, L et al.Applied physics. A, Materials science & processing (Print). 2005, Vol 81, Num 5, pp 975-980, issn 0947-8396, 6 p.Article

Management of bile duct injury during and after laparoscopic cholecystectomyTSALIS, K. G; CHRISTOFORIDIS, E. C; DIMITRIADIS, C. A et al.Surgical endoscopy. 2003, Vol 17, Num 1, pp 31-37, issn 0930-2794, 7 p.Article

Time-dependent-dielectric-breakdown of hydrogen implanted polyoxidesGUEORGUIEV, V. K; IVANOV, Tz. E; DIMITRIADIS, C. A et al.Microelectronics journal. 2001, Vol 32, Num 4, pp 301-304, issn 0959-8324Article

Low frequency noise in Schottky barrier contacts of titanium nitride on n-type siliconFARMAKIS, F. V; BRINI, J; MATHIEU, N et al.Semiconductor science and technology. 1998, Vol 13, Num 11, pp 1284-1289, issn 0268-1242Article

Control of the performance of polysilicon thin-film transistor by high-gate-voltage stressDIMITRIADIS, C. A; COXON, P. A; LOWE, A. J et al.IEEE electron device letters. 1991, Vol 12, Num 12, pp 676-678, issn 0741-3106Article

Symmetrical unified compact model of short―channel double―gate MOSFETsPAPATHANASIOLL, K; THEODOROU, C. G; TSORMPATZOGLOU, A et al.Solid-state electronics. 2012, Vol 69, pp 55-61, issn 0038-1101, 7 p.Article

Analytical threshold voltage model for lightly doped short-channel tri-gate MOSFETsTSORMPATZOGLOU, A; TASSIS, D. H; DIMITRIADIS, C. A et al.Solid-state electronics. 2011, Vol 57, Num 1, pp 31-34, issn 0038-1101, 4 p.Article

Effects of hot carriers in offset gated polysilicon thin-film transistorsHATZOPOULOS, A. T; TASSIS, D. H; ARPATZANIS, N et al.Microelectronics and reliability. 2006, Vol 46, Num 2-4, pp 311-316, issn 0026-2714, 6 p.Article