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HIGH-POWER PT SCHOTTKY BARITT DIODES.AHMAD S; FREYER J.1976; ELECTRON. LETTERS; G.B.; DA. 1976; VOL. 12; NO 10; PP. 238-239; BIBL. 6 REF.Article

READ-TYPE VARACTORS FOR PARAMETRIC AMPLIFIER APPLICATIONSPETERSON DF; HADDAD GI.1980; IEEE TRANS. MICROWAVE THEORY TECH.; ISSN 0018-9480; USA; DA. 1980; VOL. 28; NO 9; PP. 945-951; BIBL. 2 REF.Article

BARITT DIODES FOR KA-BAND FREQUENCIESFREYER J; FOERG PN.1980; I.E.E. PROC., I; GBR; DA. 1980; VOL. 127; NO 2; PP. 78-80; BIBL. 14 REF.Article

PROCESSUS DE DISPARITION DES DOMAINES MOBILES DANS LES DIODES DE GUNN PLANARSBROVKIN YU N; KOSTYLEV SA; PROKHOROV EF et al.1982; MIKROELEKTRONIKA; ISSN 0544-1269; SUN; DA. 1982; VOL. 11; NO 3; PP. 219-222; BIBL. 9 REF.Article

TRANSIT-TIME EFFECTS ON NOISE IN PLANAR CROSSED-FIELD ELECTRON GENESHARKER KJ; CRAWFORD FW.1982; IEEE TRANSACTIONS ON ELECTRON DEVICES; ISSN 0018-9383; USA; DA. 1982; VOL. 29; NO 5; PP. 851-861; BIBL. 3 REF.Article

ELECTROLUMINESCENCE IN ZNSIP2 SCHOTTKY DIODES.SIEGEL W; BECHERER H; KIHNEL G et al.1977; PHYS. STATUS SOLIDI, A; ALLEM.; DA. 1977; VOL. 41; NO 1; PP. 75-80; ABS. ALLEM.; BIBL. 17 REF.Article

BASES PHYSIQUES DE LA FIABILITE DES DIODES UHF A BARRIERE DE SCHOTTKY (ARTICLE DE SYNTHESE)RADZIEVSKIJ IA.1978; POLUPROVODN. TEKH. MIKROELEKTRON., U.S.S.R.; S.S.S.R.; DA. 1978; NO 27; PP. 89-93; BIBL. 1 P. 1/2Article

DOUBLE VELOCITY IMPATT DIODESADLERSTEIN MG; STATZ H.1979; I.E.E.E. TRANS. ELECTRON DEVICES; USA; DA. 1979; VOL. 26; NO 5; PP. 817-819; BIBL. 9 REF.Article

HIGH-POWER LOW-LOSS PIN DIODES FOR PHASED-ARRAY RADARROSEN A; MARTINELLI RU; SCHWARZMANN A et al.1979; R.C.A. REV.; USA; DA. 1979; VOL. 40; NO 1; PP. 22-58; BIBL. 22 REF.Article

PROGRESS WITH CW IMPATT DIODE CIRCUITS AT MICROWAVE FREQUENCIESGEWARTOWSKI JW.1979; I.E.E.E. TRANS. MICROWAVE THEORY TECH.; USA; DA. 1979; VOL. 27; NO 5; PP. 434-442; BIBL. 56 REF.Article

AUTODYNES DOPPLERS A DISPOSITIFS A SEMICONDUCTEURS (ARTICLE DE SYNTHESE)KHOTUNTSEV YU L.1979; IZVEST. VYSSH. UCHEBN. ZAVED., RADIOELEKTRON.; UKR; DA. 1979; VOL. 22; NO 10; PP. 44-54; BIBL. 27 REF.Article

PROPRIETES FONDAMENTALES DE LA COUCHE ENRICHIE DANS UNE DIODE GUNND'YAKONOV MI; LEVINSHTEJN ME; SIMIN GS et al.1981; FIZ. TEH. POLUPROVODN.; ISSN 0015-3222; SUN; DA. 1981; VOL. 15; NO 11; PP. 2116-2126; BIBL. 17 REF.Article

SEMICONDUCTOR DIODES FOR RF APPLICATIONS.HOWARD NR.1977; ELECTRON. ENGNG; G.B.; DA. 1977; VOL. 49; NO 598; PP. 68-69Article

A NEW IMPEDANCE-TRANSFORMATION PROPERTY AND ITS APPLICATIONS TO SWITCHING-DIODE Q-FACTOR MEASUREMENTS.MORAWSKI T.1977; INTERNATION. J. CIRCUIT THEORY APPL.; G.B.; DA. 1977; VOL. 5; NO 2; PP. 135-138; BIBL. 8 REF.Article

GAAS IMPATT DIODES FOR SATELLITE COMMUNICATIONSMASSE D; ADLERSTEIN MG; LAUTERWASSER BD et al.1982; MICROWAVE J.; ISSN 0026-2897; USA; DA. 1982; VOL. 25; NO 3; PP. 71-78; 6 P.; BIBL. 5 REF.Article

AVALANCHE BREAKDOWN PECULARITIES OF ALXGA1-X AS IMPATT DIODESKONAKOVA RV; TKHORIK YU A; ZAITSEVSKII IL et al.1981; PHYS. STATUS SOLIDI (A), APPL. RES.; ISSN 0031-8965; DDR; DA. 1981; VOL. 63; NO 2; PP. K163-K166; BIBL. 6 REF.Article

MODERNE MIKROWELLEN - HALBLEITERBAUTEILE.SEEBALD E.1976; FERNMELDE-INGR; DTSCH.; DA. 1976; VOL. 30; NO 1; PP. 1-28; ABS. ANGL. FR.; BIBL. 13 REF.Serial Issue

BLUE AND VIOLET ELECTROLUMINESCENCE EMISSION IN ZNSEXS1-XMIS DIODESFAN XM; WOODS J.1982; PHYSICA STATUS SOLIDI. (A). APPLIED RESEARCH; ISSN 0031-8965; DDR; DA. 1982; VOL. 70; NO 1; PP. K27-K30; BIBL. 15 REF.Article

POUR VOS MONTAGES HYPERFREQUENCES: DES DIODES PIN ET SCHOTTKY EN "BEAM LEAD"WARGIN JJ.1981; ELECTRON. IND.; FRA; DA. 1981; NO 8; PP. 35-38Article

UTILISATION D'UNE METHODE DE DIFFERENCIATION MODULEE POUR L'ETUDE DES INHOMOGENEITES DES CARACTERISTIQUES COURANT-TENSION DE DIODES DE TRANSIT A AVALANCHE AU SILICIUMZAJTSEVSKIJ IL; KONAKOVA RV; RYBALKA VV et al.1980; MIKROELEKTRONIKA; SUN; DA. 1980; VOL. 9; NO 3; PP. 253-258; BIBL. 21 REF.Article

REFLEXION D'ONDES HYPERFREQUENCE SUR DES STRUCTURES P-NABOLTIN'SH EH EH; LARIONOVA NF.1979; LATV. P.S.R. ZINAT. AKAD. VEST., FIZ. TEH. ZINAT. SER.; SUN; DA. 1979; NO 2; PP. 43-46; ABS. ENG; BIBL. 2 REF.Article

THE SCHOTTKY EFFECT IN PUNCH-THROUGH DIODES.VAN DE ROER TG.1977; J. APPL. PHYS.; U.S.A.; DA. 1977; VOL. 48; NO 9; PP. 3835-3837; BIBL. 8 REF.Article

A METHOD FOR FABRICATING EXPONENTIALLY RETROGRADED SILICON HYPERABRUPT VARACTORS & STUDY OF THEIR CHARACTERISTICS.TYAGI MS; GUPTA AK.1977; INDIAN J. PURE APPL. PHYS.; INDIA; DA. 1977; VOL. 15; NO 3; PP. 152-156; BIBL. 12 REF.Article

TRANSIENT ANALYSIS OF THE TRAPATT MODE IN AVALANCHE DIODESKHOCHNEVIS RAD M; LOMAX RJ; HADDAD GI et al.1978; SOLID-STATE ELECTRON.; GBR; DA. 1978; VOL. 21; NO 10; PP. 1245-1252; BIBL. 11 REF.Article

A 60-W CW SOLID-STATE OSCILLATOR AT C BAND.WALLACE RN; ADLERSTEIN MG; STEELE SR et al.1976; I.E.E.E. TRANS. MICROWAVE THEORY TECH.; U.S.A.; DA. 1976; VOL. 24; NO 7; PP. 483-485; BIBL. 7 REF.Article

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