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DIODE DE TRANSIT A AVALANCHE, DE STRUCTURE HETERO-EPITAXIALEBOLTOVETS NS; KONAKOVA RB; TKHORIK YU A et al.1974; RADIOTEKH. I ELEKTRON.; S.S.S.R.; DA. 1974; VOL. 19; NO 7; PP. 1561-1562; BIBL. 3 REF.Article

HEAT FLOW RESISTANCE EVALUATION IN AVALANCHE DIODES.SELLBERG F.1977; I.E.E.E. TRANS. ELECTRON DEVICES; U.S.A.; DA. 1977; VOL. 24; NO 6; PP. 763-765; BIBL. 6 REF.Article

EFFECTS OF TUNNELING ON HIGH-EFFICIENCY IMPATT AVALANCHES DIODES.CHIVE M; CONSTANT E; LEFEBVRE M et al.1975; PROC. I.E.E.E.; U.S.A.; DA. 1975; VOL. 63; NO 5; PP. 824-826; BIBL. 4 REF.Article

UNE VARIANTE DU SCHEMA EQUIVALENT D'UNE DIODE A AVALANCHEKULESHOV VN; KHARITONOV IN.1975; TRUDY MOSKOV. ENERGET. INST.; S.S.S.R.; DA. 1975; NO 265; PP. 151; BIBL. 2 REF.Article

STATISCHE EIGENSCHAFTEN VON LAWINEN-FOTODIODEN. = LES CARACTERISTIQUES STATIQUES DES PHOTODIODES A AVALANCHEBEHRENDT R.1975; NACHR.-TECH., ELEKTRON.; DTSCH.; DA. 1975; VOL. 25; NO 8; PP. 285-287; ABS. RUSSE ANGL. FR.; BIBL. 10 REF.Article

AN APPROXIMATE TURN-OFF THEORY FOR MINIATURE AVALANCHE DIODES.OLDHAM WG; ANTOGNETTI P.1975; PHYS. STATUS SOLIDI, A; ALLEM.; DA. 1975; VOL. 28; NO 2; PP. 555-559; ABS. ALLEM.; BIBL. 9 REF.Article

STABILITE THERMIQUE DES RECEPTEURS A PHOTO DIODES D'AVALANCHEKUDRYASHOV VA; MATVEEV IN; NOSOV AA et al.1974; IN: OPT. EHLEKTROOPT. OBRAB. INF. 3. VSES. SEMIN.; MOSKVA; 1971; MOSKVA; NAUKA; DA. 1974; PP. 89-91Conference Paper

CARACTERISTIQUES THERMIQUES DES DIODES A AVALANCHEGULCZYNSKI J; STASZAK Z.1973; ROZPR. ELEKTROTECH.; POLSKA; DA. 1973; VOL. 19; NO 2; PP. 281-293; ABS. ANGL. FR. ALLEM. RUSSE; BIBL. 12 REF.Serial Issue

AVALANCHEDIODEN UND ZINKOXID-VARISTOREN ALS KONTAKTSCHUTZ. = DIODES A AVALANCHE ET VARISTANCES A OXYDES DE ZINC POUR LA PROTECTION DES CONTACTSSTENZEL KJ.1975; ELEKTROTECH. Z., B; DTSCH.; DA. 1975; VOL. 27; NO 9; PP. 218-221; BIBL. 13 REF.Article

AVALANCHE BUILDUP TIME OF SILICON AVALANCHE PHOTODIODES.KANEDA T; TAKANASHI H.1975; APPL. PHYS. LETTERS; U.S.A.; DA. 1975; VOL. 26; NO 11; PP. 642-644; BIBL. 6 REF.Article

1/F NOISE IN UNIFORM AVALANCHE DIODESRINGO JA; LAURITZEN PO.1973; SOLID-STATE ELECTRON.; G.B.; DA. 1973; VOL. 16; NO 3; PP. 327-328; BIBL. 7 REF.Serial Issue

GEGENSEITIGE SYNCHRONISATION VON LAWINENDIODENOSZILLATOREN = SYNCHRONISATION MUTUELLE D'OSCILLATEURS A DIODES A AVALANCHETHUST H.1972; NACHR.-TECH.; DTSCH.; DA. 1972; VOL. 22; NO 9; PP. 308Serial Issue

REGIME OPTIMUM DE LA PHOTODIODE A AVALANCHE DANS UN RECEPTEUR A IMPULSIONSSKIBARKO AP; MERKISHIN GV.1976; IZVEST. VYSSH. UCHEBN. ZAVED., RADIOELEKTRON.; S.S.S.R.; DA. 1976; VOL. 19; NO 3; PP. 64-68; BIBL. 9 REF.Article

EXPERIMENTAL EVIDENCE FOR THE EBC-AVALANCHE EFFECT IN A SILICON DIODE.GIBBONS DJ; HOGARTH CA; WATERS DG et al.1975; J. PHYS. D; G.B.; DA. 1975; VOL. 8; NO 3; PP. 262-265; BIBL. 8 REF.Article

GENERATEUR D'IMPULSIONS DE NANOSECONDES AVEC DES TRANSISTORS A AVALANCHE ET DES DIODES A STOCKAGE DE CHARGESD'YAKONOV VP; STERLYAGOV AA.1975; PRIBORY TEKH. EKSPER.; S.S.S.R.; DA. 1975; NO 1; PP. 116-117; BIBL. 3 REF.Article

REGULATION DE LA TENSION DE FONCTIONNEMENT D'UNE PHOTODIODE A AVALANCHEKOROLEV VV; BERLIZOVA OM.1975; PRIBORY TEKH. EKSPER.; S.S.S.R.; DA. 1975; NO 3; PP. 165-167; BIBL. 3 REF.Article

HIGH-EFFICIENCY MICROWAVE OSCILLATIONS THAT USE NEW 4-LAYER STRUCTURE.CULSHAW B; GIBLIN RA.1974; ELECTRON. LETTERS; G.B.; DA. 1974; VOL. 10; NO 3; PP. 27-29; BIBL. 3 REF.Article

PROPERTIES OF AVALANCHE PHOTODIODES.WEBB PP; MCINTYRE RJ; CONRADI J et al.1974; R.C.A. REV.; U.S.A.; DA. 1974; VOL. 35; NO 2; PP. 234-278; BIBL. 18 REF.Article

ON THE AVALANCHE INITIATION PROBABILITY OF AVALANCHE DIODES ABOVE THE BREAKDOWN VOLTAGE = SUR LA PROBABILITE D'AMORCAGE D'AVALANCHES DANS DES DIODES A AVALANCHE, AU-DESSUS DE LA TENSION DE CLAQUAGEMCINTYRE RJ.1973; I.E.E.E. TRANS. ELECTRON DEVICES; U.S.A.; DA. 1973; VOL. 20; NO 7; PP. 637-641; BIBL. 19 REF.Serial Issue

TRIGGERING PHENOMENA IN AVALANCHE DIODESOLDHAM WG; SAMUELSON RR; ANTOGNETTI P et al.1972; I.E.E.E. TRANS. ELECTRON DEVICES; U.S.A.; DA. 1972; VOL. 19; NO 9; PP. 1056-1060; BIBL. 19 REF.Serial Issue

AVALANCHE DIODE MODELLING.GIBLIN RA; CULSHAW B; BLAKEY PA et al.sdIN: ACT. SEMICOND. DEV. MICROWAVES INTEGRATED OPT. BIENN. CORNELL ELECTR. ENG. CONF. 5. PROC.; ITHACA, N.Y.; 1975; S.L.; DA. S.D.; PP. 343-354; BIBL. 1 P. 1/2Conference Paper

EVALUATION OF THE DISPERSION RELATION OF THE MISAWA AVALANCHE DIODEHARTH W.1983; AEUE. ARCHIV FUER ELEKTRONIK UND UEBERTRAGUNGSTECHNIK; ISSN 0001-1096; DEU; DA. 1983; VOL. 37; NO 3-4; PP. 135-136; ABS. GER; BIBL. 8 REF.Article

DISPOSITIF OSCILLANT A IMPULSION PHOTOSENSIBLE TYPE AVALANCHE)ABE T.1976; OYO BUTURI; JAP.; DA. 1976; VOL. 45; NO 3; PP. 228-234; ABS. ANGL.; BIBL. 6 REF.Article

EFFICIENCY ENHANCEMENT IN AVALANCHE DIODES BY DEPLETION-REGION-WIDTH MODULATION.BLAKEY PA; CULSHAW B; GIBLIN RA et al.1974; ELECTRON. LETTERS; G.B.; DA. 1974; VOL. 10; NO 21; PP. 435-436; BIBL. 3 REF.Article

GERMANIUM AVALANCHE PHOTODETECTORS.TAKANASHI H; KANEDA T; SEI H et al.1974; FUJITSU SCI. TECH. J.; JAP.; DA. 1974; VOL. 10; NO 1; PP. 119-134; BIBL. 7 REF.Article

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