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CHARACTERISTICS OF SCHOTTKY DIODES AT 10.6 MU MINOUE N; HARAKAWA K; YASUOKA Y et al.1983; APPLIED PHYSICS LETTERS; ISSN 0003-6951; USA; DA. 1983; VOL. 42; NO 3; PP. 268-269; BIBL. 9 REF.Article

PHOTOACOUSTIC DETERMINATION OF THE INTERNAL QUANTUM EFFICIENCY OF SCHOTTKY DIODESTHIELEMANN W; NEUMANN H.1980; PHYS. STATUS SOLIDI (A), APPL. RES.; ISSN 0031-8965; DDR; DA. 1980; VOL. 61; NO 2; PP. K123-K126; BIBL. 5 REF.Article

SCHOTTKEY RECTIFIERS ON SILICON USING HIGH BARRIERSSTOLT L; BOHLIN K; TOVE PA et al.1983; SOLID-STATE ELECTRONICS; ISSN 0038-1101; GBR; DA. 1983; VOL. 26; NO 4; PP. 295-297; BIBL. 6 REF.Article

SCHOTTKY BARRIER TYPE DIODE WITH AN ELECTROCHEMICALLY PREPARED COPOLYMER HAVING PYRROLE AND N-METHYLPYRROLE UNITSKOEZUKA H; ETOH S.1983; JOURNAL OF APPLIED PHYSICS; ISSN 0021-8979; USA; DA. 1983; VOL. 54; NO 5; PP. 2511-2516; BIBL. 22 REF.Article

THEORY OF TRAP FILLING IN SCHOTTKY DIODESNORAS JM.1981; J. PHYS. C: SOLID STATE PHYS.; ISSN 0022-3719; GBR; DA. 1981; VOL. 14; NO 17; PP. 2341-2349; BIBL. 4 REF.Article

CHANGES IN AU-GAAS SCHOTTKY BARRIER DIODES WITH LOW NEUTRON FLUENCE.BORREGO JM; GUTMANN RJ.1976; APPL. PHYS. LETTERS; U.S.A.; DA. 1976; VOL. 28; NO 5; PP. 280-282; BIBL. 7 REF.Article

METALLIZATION SCHEME FOR N-GAAS SCHOTTKY DIODES INCORPORATING SINTERED CONTACTS AND A W DIFFUSION BARRIER.SINHA AK.1975; APPL. PHYS. LETTERS; U.S.A.; DA. 1975; VOL. 26; NO 4; PP. 171-173; BIBL. 14 REF.Article

SUBMILLIMETER DETECTION USING A SCHOTTKY DIODE WITH A LONG-WIRE ANTENNA.MIZUNO K; KUWAHARA R; ONO S et al.1975; APPL. PHYS. LETTERS; U.S.A.; DA. 1975; VOL. 26; NO 11; PP. 605-607; BIBL. 7 REF.Article

CONVERTISSEUR DE FREQUENCE POUR 2,5 MM DE LONGUEUR D'ONDEBORDONSKIJ GS; STRUKOV IA; KHAPIN YU B et al.1976; RADIOTEKH. I ELEKTRON.; S.S.S.R.; DA. 1976; VOL. 21; NO 3; PP. 559-565; BIBL. 12 REF.Article

SI-SCHOTTKY-DIODE KD 514A AUS DER SOWJETUNION.BIELEFELDT R.1976; RADIO FERNSEHEN ELEKTRON.; DTSCH.; DA. 1976; VOL. 25; NO 15; PP. 493Article

A NEW UNIFORM-FIELD SCHOTTKY-BARRIER STRUCTURE.RUSU A; BULUCEA C; POSTOLACHE C et al.1976; REV. ROUMAINE PHYS.; ROUMAN.; DA. 1976; VOL. 21; NO 5; PP. 524-528; ABS. FR.; BIBL. 5 REF.Article

EFFECT OF DEEP IMPURITY LEVELS ON SCHOTTKY BARRIER DIODE CHARACTERISTICS.KOROL AN; KITSAI MY; STRIKHA VI et al.1975; SOLID-STATE ELECTRON.; G.B.; DA. 1975; VOL. 18; NO 5; PP. 375-379; BIBL. 11 REF.Article

BREAKDOWN AND CAPACITANCE PROPERTIES OF HYPERABRUPT EPITAXIAL SCHOTTKY BARRIER DIODES.RAJENDRA KUMAR; SUBODH JINDAL; BHATTACHARYYA AB et al.1975; SOLID-STATE ELECTRON.; G.B.; DA. 1975; VOL. 18; NO 11; PP. 999-1002; BIBL. 11 REF.Article

CRYOGENIC COOLING OF MIXERS FOR MILLIMETER AND CENTIMETER WAVELENGTHSWEINREIB S; KERR AR.1973; I.E.E.E. J. SOLID-STATE CIRCUITS; U.S.A.; DA. 1973; VOL. 8; NO 1; PP. 58-63; BIBL. 18 REF.Serial Issue

DELAYED SWITCHING IN CRYSTALLINE SI DIODES WITH DEEP IMPURITY LEVELSHARIU T; SHIBATA Y; ISHIKAWA H et al.1972; JAP. J. APPL. PHYS.; JAP.; DA. 1972; VOL. 11; NO 11; PP. 1749; BIBL. 3 REF.Serial Issue

RF BURNOUT IN X-BAND SCHOTTKY MIXERSAHMAD K.1972; J. APPL. PHYS.; U.S.A.; DA. 1972; VOL. 43; NO 11; PP. 4826-4827; BIBL. 6 REF.Serial Issue

REALISATION, ETUDE ET MODELISATION DE DIODES SCHOTTKY SUR GERMANIUM INTRINSEQUE = EXECUTION, STUDY AND MODELLING OF SCHOTTKY DIODES ON INTRINSIC GERMANIUMTRAORE MAHAMA YVES.1981; ; FRA; DA. 1981; 129 P.; 30 CM; BIBL. 45 REF.; TH. 3E CYCLE: ENERG. PHYS./GRENOBLE, I.N.P./1981Thesis

THE CAPACITANCE OF LARGE BARRIER SCHOTTKY DIODES.GREEN MA.1976; SOLID-STATE ELECTRON.; G.B.; DA. 1976; VOL. 19; NO 5; PP. 421-422; BIBL. 10 REF.Article

TRANSIENT HIGH LEVEL MAJORITY AND MINORITY CARRIER PHOTOCURRENTS IN P-TYPE SILICON SCHOTTKY BARRIER DIODES. II. COMPARISON WITH COMPUTER CALCULATIONS.JANNEY R; SEIBT W; NORDE H et al.1976; SOLID-STATE ELECTRON.; G.B.; DA. 1976; VOL. 19; NO 7; PP. 645-652; BIBL. 9 REF.Article

INJECTION LOGIC'S RANGE OF APPLICATIONS IS WIDEST.1975; ELECTRONICS; U.S.A.; DA. 1975; VOL. 48; NO 14; PP. 86-89Article

VARIABLES WHICH INFLUENCE SILICON SCHOTTKY SOLAR CELL PERFORMANCE.ANDERSON WA; VERNON SM; DELAHOY AE et al.1975; IN: INT. ELECTRON DEVICES MEET.; WASHINGTON, D.C.; 1975; NEW YORK; INST. ELECTR. ELECTRON. ENG.; DA. 1975; PP. 217-220; BIBL. 6 REF.Conference Paper

PROCESSUS TRANSITOIRES DANS LES DIODES A BARRIERE DE SCHOTTKYPETROV GV.1973; MIKROELEKTRONIKA; S.S.S.R.; DA. 1973; VOL. 2; NO 3; PP. 232-238; BIBL. 13 REF.Serial Issue

TRANSIENT HIGH LEVEL MAJORITY AND MINORITY CARRIER PHOTOCURRENTS IN P-TYPE SILICON SCHOTTKY BARRIER DIODES. I. COMPARISON WITH ANALYTIC THEORY.NORDE H; SEIBT W; JANNEY R et al.1976; SOLID-STATE ELECTRON.; G.B.; DA. 1976; VOL. 19; NO 7; PP. 653-655; BIBL. 13 REF.Article

MICROMANIPULATEUR POUR MESURE DE LA DISTRIBUTION D'IMPURETES DANS LES COUCHES EPITAXIALES DES SEMI-CONDUCTEURSSMIRNOV YU S; CHERENKOV SS.1975; ZAVODSK. LAB.; S.S.S.R.; DA. 1975; VOL. 41; NO 7; PP. 819-820; BIBL. 2 REF.Article

DEPENDENCE OF BARRIER HEIGHT ON ENERGY GAP IN AU N-TYPE GAAS1-XPX SCHOTTKY DIODES.RIDEOUT VL.1974; SOLID-STATE ELECTRON.; G.B.; DA. 1974; VOL. 17; NO 10; PP. 1107-1108; BIBL. 8 REF.Article

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