EDGE DISLOCATION BEHAVIOUR IN AU-N-SILICON DIODES.MANTOVANI S; DEL PENNINO U.1975; PHYS. STATUS SOLIDI, A; ALLEM.; DA. 1975; VOL. 30; NO 2; PP. 747-754; ABS. ALLEM.; BIBL. 18 REF.Article

THE PROPERTIES OF SOME METAL-INSB SURFACE BARRIER DIODES.KORWIN PAWLOWSKI ML; HEASELL EL.1975; SOLID-STATE ELECTRON.; G.B.; DA. 1975; VOL. 18; NO 10; PP. 849-852; BIBL. 8 REF.Article

DIODE CHARACTERISTICS AND EDGE EFFECTS OF METAL-SEMICONDUCTOR DIODESTOVE PA; HYDER SA; SUSILA G et al.1973; SOLID-STATE ELECTRON.; G.B.; DA. 1973; VOL. 16; NO 4; PP. 513-521; BIBL. 16 REF.Serial Issue

ETUDE DES SPECTRES DES SECTIONS DE PHOTOIONISATION DANS LE GAAS, DOPE AU CR, A L'AIDE DE L'EFFET PROTOCAPACITIF DANS LES STRUCTURES A BARRIERE DE POTENTIELGUTKIN AA; LEBEDEV AA; RADU RK et al.1972; FIZ. TEKH. POLUPROVODN.; S.S.S.R.; DA. 1972; VOL. 6; NO 10; PP. 1954-1960; BIBL. 18 REF.Serial Issue

AN EVALUATION OF CDTE SURFACE BARRIER DIODES AS DETECTORS FOR ENERGETIC CHARGED PARTICLESRISTINEN RA; PETERSON RJ; HAMILL JJ et al.1981; NUCL. INSTRUM. METHODS PHYS. RES.; ISSN 502936; NLD; DA. 1981; VOL. 188; NO 2; PP. 445-452; BIBL. 14 REF.Article

CARACTERISTIQUES ELECTRIQUES ET PHOTOELECTRIQUES DES DIODES NI-ZN IN₂S₄)ARAMA ED; GRUSHKO NS; ZHITAR VF et al.1976; DOKL. AKAD NAUK S.S.S.R.; S.S.S.R.; DA. 1976; VOL. 227; NO 6; PP. 1329-1331; BIBL. 7 REF.Article

MECANISME DE PASSAGE DU PHOTOCOURANT DANS LES DIODES METAL-GERMANIUM A BARRIERE SUPERFICIELLEDOBROZHANSKIJ YU A; KIL'CHITSKAYA SS; PRESNOV VA et al.1975; FIZ. TEKH. POLUPROVODN.; S.S.S.R.; DA. 1975; VOL. 9; NO 11; PP. 2060-2064; BIBL. 13 REF.Article

ETAT ACTUEL DES TRAVAUX ET DES ETUDES DES STRUCTURES A BARRIERE DE SURFACE METAL-SEMICONDUCTEUR A^III B^V CREEES PAR UNE METHODE DE DEPOT CHIMIQUE DES METAUXGOL'DBERG YU A; TSARENKOV BV.1978; POLUPROVODN. TEKH. MIKROELEKTRON., U.S.S.R.; S.S.S.R.; DA. 1978; NO 27; PP. 33-43; BIBL. 26 REF.Article

TRANSIENT SPACE CHARGE LIMITED CURRENTS IN LIGHT-PULSE EXCITED SILICONTOVE PA; ANDERSSON LG.1973; SOLID-STATE ELECTRON.; G.B.; DA. 1973; VOL. 16; NO 9; PP. 961-971; H.T. 2; BIBL. 15 REF.Serial Issue

PHOTO-ELECTRONIC PROPERTIES OF INAS_0.07SB_0.93 FILMSWIEDER RH; CLAWSON AR.1973; THIN SOLID FILMS; NETHERL.; DA. 1973; VOL. 15; NO 2; PP. 217-221; BIBL. 19 REF.Serial Issue

THE PHOTOSENSITIVITY OF DIODES BASED ON CDGEP₂: IN CRYSTALSMALTSEVA IA; MAMEDOV A; RUD YV et al.1978; PHYS. STATUS SOLIDI, A; DDR; DA. 1978; VOL. 50; NO 2; PP. 445-448; ABS. RUS; BIBL. 6 REF.Article

PHOTOTENSIBILITE DES DIODES A BARRIERE SUPERFICIELLE AU SUR SIN DANS L'INTERVALLE SPECTRAL 1-6EVGUTKIN AA; DMITRIEV MV; KHAIT VM et al.1977; FIZ. TEKH. POLUPROVODN.; S.S.S.R.; DA. 1977; VOL. 11; NO 3; PP. 502-505; BIBL. 21 REF.Article

HOLE DIFFUSION LENGTH IN HIGH PURITY N-GAASRYAN RD; EBERHARDT JE.1972; SOLID-STATE ELECTRON.; G.B.; DA. 1972; VOL. 15; NO 8; PP. 865-868; BIBL. 18 REF.Serial Issue

Soft x-ray array results on the ZT-40M reversed-field pinchWURDEN, G. A.The Physics of fluids. 1984, Vol 27, Num 3, pp 551-554, issn 0031-9171Article