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SCHEMAS EQUIVALENTS DES DIODES A CONTACT PONCTUEL P-PB5BAEV I; BOZHILOV B; PANOV N et al.1972; IZVEST. FIZ. INST. A.N.E.B., SOFIJA; BALG.; DA. 1972; VOL. 22; PP. 201-209; ABS. RUSSE ANGL.; BIBL. 4 REF.Serial Issue

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CHARACTERISTICS OF TUNGSTEN-NICKEL POINT CONTACT DIODES USED AS LASER HARMONIC-GENERATOR MIXERS.SAKUMA E; EVENSON KM.1974; I.E.E.E. J. QUANTUM ELECTRON.; U.S.A.; DA. 1974; VOL. 10; NO 8; PP. 599-603; BIBL. 17 REF.Article

DETECTION OF OPTICAL AND INFRARED RADIATION WITH DC-BIASED, ELECTRON-TUNNELING, METAL-BARRIER-METAL DIODESFARIS SM; GUSTAFSON KT; WIESNER JC et al.1973; I.E.E.E.J. QUANTUM ELECTRON.; U.S.A.; DA. 1973; VOL. 9; NO 7; PP. 737-745; BIBL. 18 REF.Serial Issue

EXPERIMENTAL NONLINEARITY COEFFICIENTS FOR THE TUNGSTEN-NICKEL POINT-CONTACT DIODEWHITFORD BG.1982; IEEE J. QUANTUM ELECTRON.; ISSN 0018-9197; USA; DA. 1982; VOL. 18; NO 3; PP. 428-432; BIBL. 37 REF.Article

GENERATION OF INFRARED RADIATION IN A METAL-TO-METAL POINT-CONTACT DIODE AT SYNTHETIZED FREQUENCIES OF INCIDENT FIELDS: A HIGH-SPEED BROAD-BAND LIGHT MODULATORSANCHEZ A; SINGH SK; JAVAN A et al.1972; APPL. PHYS. LETTERS; U.S.A.; DA. 1972; VOL. 21; NO 5; PP. 240-243; BIBL. 6 REF.Serial Issue

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AUDIOFREQUENCY NOISE IN POINT CONTACT MICROWAVE DIODES.SOLLNER TCLG; HARTLEY CL.1976; J. PHYS. E; G.B.; DA. 1976; VOL. 9; NO 9; PP. 744-745; BIBL. 4 REF.Article

COMPARISON OF METHODS FOR SENSITIVITY DETERMINATION OF POINT-CONTACT DIODES AT SUBMILLIMETER WAVELENGTH.SAUTER E; SCHULTZ GV.1977; I.E.E.E. TRANS. MICROWAVE THEORY TECH.; U.S.A.; DA. 1977; VOL. 25; NO 6; PP. 468-470; BIBL. 6 REF.Article

RF BURNOUT DEPENDENCE ON VARIATION IN BARRIER CAPACITANCE OF MIXER DIODESANAND Y.1973; PROC. I.E.E.E.; U.S.A.; DA. 1973; VOL. 61; NO 2; PP. 247-248; BIBL. 4 REF.Serial Issue

METAL-TO-METAL DIODE DETECTOR UTILIZING A FILAMENTARY CRYSTALMIZUNO K; SUZUKI N; ONO S et al.1972; PROC. I.E.E.E.; U.S.A.; DA. 1972; VOL. 60; NO 9; PP. 1110-1111; BIBL. 7 REF.Serial Issue

HIGH-ORDER SUBMILLIMETER MIXING IN POINT-CONTACT AND SCHOTTKY DIODES.ZUIDBERG BFJ; DYMANUS A.1976; APPL. PHYS. LETTERS; U.S.A.; DA. 1976; VOL. 29; NO 10; PP. 643-645; BIBL. 4 REF.Article

RESISTANCE DEPENDENCE OF DETECTED SIGNALS OF MOM DIODESYASUOKA Y; SAKURADA T; SIU DP et al.1979; J. APPL. PHYS.; ISSN 0021-8979; USA; DA. 1979; VOL. 50; NO 9; PP. 5860-5864; BIBL. 17 REF.Article

THE IMPORTANCE OF GEOMETRY, FIELD AND TEMPERATURE IN TUNNELING AND RECTIFICATION BEHAVIOR OF POINT CONTACT JUNCTIONS OF IDENTICAL METALSMISKOVSKY NM; SHEPHERD SJ; CUTLER PH et al.1979; APPL. PHYS. LETT.; ISSN 0003-6951; USA; DA. 1979; VOL. 35; NO 7; PP. 560-562; BIBL. 29 REF.Article

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Microwave point contact diode responsivity improvement through surface effects in vacuumKOPEIKA, N. S; HIRSCH, I; RAVFOGEL, M et al.IEEE transactions on microwave theory and techniques. 1984, Vol 32, Num 10, pp 1384-1387, issn 0018-9480Article

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