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THE EFFECT OF SURFACE RECOMBINATION ON PIN DIODESAITCHISON JM; BERZ F.1981; SOLID-STATE ELECTRON.; ISSN 0038-1101; GBR; DA. 1981; VOL. 24; NO 9; PP. 795-804; BIBL. 12 REF.Article

PIN-BIPOLAR OPTICAL RECEIVER USING A HIGH-FREQUENCY HIGH-BETA TRANSISTORMITCHELL AF; O'MAHONY MJ; BOXALL BA et al.1983; ELECTRONICS LETTERS; ISSN 0013-5194; GBR; DA. 1983; VOL. 19; NO 12; PP. 445-447; BIBL. 6 REF.Article

DESIGN AND DEVELOPMENT OF L-BAND PIN DIODE SPDT SWITCHESSARKAR BK.1980; J. INSTIT. ELECTRON. TELECOMMUNIC. ENGRS; IND; DA. 1980; VOL. 26; NO 10; PP. 550-552; BIBL. 4 REF.Article

DESIGN AND OBSERVED CHARACTERISTICS OF X-BAND PIN DIODE LIMITERS.SARKAR BK.1975; J. INSTIT. ELECTRON. TELECOMMUNIC. ENGRS; INDIA; DA. 1975; VOL. 21; NO 7; PP. 378-382; BIBL. 3 REF.Article

CALCUL DES ATTENUATIONS A DIODES P-I-NSAMSONOV AV.1975; TRUDY MOSKOV. ENERGET. INST.; S.S.S.R.; DA. 1975; NO 265; PP. 138-141; BIBL. 1 REF.Article

ETUDE DES COMMUTATEURS ELECTRONIQUES A NOMBRE ARBITRAIRE DE DIODES DANS UNE VOIETSYPKIN EH R.1975; IZVEST. VYSSH. UCHEBN. ZAVED., RADIOELEKTRON.; S.S.S.R.; DA. 1975; VOL. 18; NO 1; PP. 22-28; BIBL. 3 REF.Article

LOW-DRAIN PIN-DIODE TR SWITCHCHORNEY P.1973; MICROWAVE J.; U.S.A.; DA. 1973; VOL. 16; NO 2; PP. 16-20 (3 P.); BIBL. 2 REF.Serial Issue

AVALANCHE BREAKDOWN VOLTAGE OF A MICROWAVE PIN DIODE.RATNAKUMAR KN.1976; SOLID-STATE ELECTRON.; G.B.; DA. 1976; VOL. 19; NO 7; PP. 655-656; BIBL. 3 REF.Article

EFFET PHOTOVOLTAIQUE DANS UNE STRUCTURE P.I.NALTAJSKIJ YU M; KISELEV VS.1975; RADIOTEKH. I ELEKTRON.; S.S.S.R.; DA. 1975; VOL. 20; NO 12; PP. 2550-2558; BIBL. 14 REF.Article

PROPRIETES DES STRUCTURES P-I-N A CARACTERE NON ORDONNE DU CHAMP ELECTRIQUEEREMIN VK; STROKAN NB; TISNEK NI et al.1975; FIZ. TEKH. POLUPROVODN.; S.S.S.R.; DA. 1975; VOL. 9; NO 3; PP. 530-534; BIBL. 11 REF.Article

SPACE RADIATION DAMAGE MEASUREMENTS IN THE EARTH SYNCHRONOUS ORBIT.SARLES FW JR; STANLEY AG; ROBERGE JK et al.1973; I.E.E.E. TRANS. AEROSPACE ELECTRON. SYST.; U.S.A.; DA. 1973; VOL. 9; NO 6; PP. 921-924; BIBL. 6 REF.Article

INFLUENCE DE L'EFFET DE PEAU SUR LA TEMPERATURE D'UNE DIODE P.I.N. POLARISEE EN DIRECTBOVA NT; MALYUGA VF.1982; IZV. VYSS. UCEBN. ZAVED., RADIOELEKTRON.; ISSN 0021-3470; SUN; DA. 1982; VOL. 25; NO 5; PP. 51-55; BIBL. 14 REF.Article

IONISATION PAR CHOCS DANS UNE STRUCTURE N-I-P A BANDE VARIABLEARUTYUNYAN VM; PETROSYAN SG.1980; FIZ. TEH. POLUPROVODN.; ISSN 0015-3222; SUN; DA. 1980; VOL. 14; NO 10; PP. 2001-2006; BIBL. 13 REF.Article

MEASUREMENT OF THE X-RAY SENSITIVITY OF SILICON DIODES IN THE ENERGY REGION 1.8 TO 5.0 KEV.HOHLFELDER JJ.1974; ADV. X-RAY ANAL.; U.S.A.; DA. 1974; VOL. 17; PP. 531-541; BIBL. 5 REF.; (22ND ANNU. CONF. APPL. X-RAY ANAL. PROC.; DENVER; 1973)Conference Paper

COMPUTER-OPTIMIZED DESIGN OF PIN DIODE ABSORPTION ATTENUATORS.DWORSKY LN.1976; MICROWAVE J.; U.S.A.; DA. 1976; VOL. 19; NO 2; PP. 39-49 (4P.); BIBL. 3 REF.Article

ETUDE DES PARTICULARITES DES COURANTS DE DOUBLE INJECTION DANS LES STRUCTURES P-I-N DE SILICIUM N DOPEES PAR LE ZINCABAKUMOV AA; KARIMOVA IZ; KNIGIN PI et al.1976; FIZ. TEKH. POLUPROVODN.; S.S.S.R.; DA. 1976; VOL. 10; NO 3; PP. 486-489; BIBL. 10 REF.Article

PARTICULARITES DE LA CAPACITE DES STRUCTURES P-I-N A NIVEAUX PROFONDSEREMIN VK; DANENGIRSH SG; STROKAN NB et al.1975; FIZ. TEKH. POLUPROVODN.; S.S.S.R.; DA. 1975; VOL. 9; NO 1; PP. 95-98; BIBL. 8 REF.Article

SWITCHING TIME PERFORMANCE OF MICROWAVE PIN DIODES.MCDADE JC; SCHIAVONE F.1974; MICROWAVE J.; U.S.A.; DA. 1974; VOL. 17; NO 12; PP. 65-68; BIBL. 4 REF.Article

THE PIN STRUCTURE EMPLOYED AS CURRENT AMPLIFIER.KONAK C; KONAKOVA A.1974; CZECHOSL. J. PHYS.; CZECHOSL.; DA. 1974; VOL. 24; NO 9; PP. 1008-1017; BIBL. 19 REF.Article

EST-CE QUE LA RESONANCE SERIE D'UNE DIODE P-I-N EST ESSENTIELLE POUR LE FONCTIONNEMENT D'UN COMMUTATEUR UHF.LEBEDEV IV.1974; IZVEST. VYSSH. UCHEBN. ZAVED., RADIOELEKTRON.; S.S.S.R.; DA. 1974; VOL. 17; NO 7; PP. 20-23; BIBL. 7 REF.Article

GENERATEUR DE FONCTION RESISTIF POUR UHF A DIODES P-I-NPERLIN BG; SHMILEVICH MS.1974; IZVEST. VYSSH. UCHEBN. ZAVED., PRIBOROSTR.; S.S.S.R.; DA. 1974; VOL. 17; NO 4; PP. 104-107; BIBL. 2 REF.Article

CARACTERISTIQUE COURANT TENSION D'UNE STRUCTURE P-I-N AU SILICIUM COMPENSEZOLOTAREV VI; MUZYUKIN LP; MURYGIN VI et al.1973; FIZ. TEKH. POLUPROVODN.; S.S.S.R.; DA. 1973; VOL. 7; NO 2; PP. 371-375; BIBL. 4 REF.Serial Issue

SURFACE-PASSIVATED LOW DARK CURRENT INGAAS PIN PHOTODIODESNICKEL H; KUPHAL E.1983; JOURNAL OF OPTICAL COMMUNICATIONS; ISSN 0173-4911; DEU; DA. 1983; VOL. 4; NO 2; PP. 63-67; BIBL. 19 REF.Article

A SIMPLIFIED THEORY OF THE P-I-N DIODE.BERZ F.1977; SOLID-STATE ELECTRON.; G.B.; DA. 1977; VOL. 20; NO 8; PP. 709-714; BIBL. 11 REF.Article

LINEAR PIN DIODE SWITCHED ATTENUATOR.HARVEY JT; SVOBODA V.1976; MONITOR; AUSTRAL.; DA. 1976; VOL. 37; NO 1; PP. 11-12; BIBL. 2 REF.Article

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