kw.\*:("DIODE COUCHE INTRINSEQUE")
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THE EFFECT OF SURFACE RECOMBINATION ON PIN DIODESAITCHISON JM; BERZ F.1981; SOLID-STATE ELECTRON.; ISSN 0038-1101; GBR; DA. 1981; VOL. 24; NO 9; PP. 795-804; BIBL. 12 REF.Article
AVALANCHE BREAKDOWN VOLTAGE OF A MICROWAVE PIN DIODE.RATNAKUMAR KN.1976; SOLID-STATE ELECTRON.; G.B.; DA. 1976; VOL. 19; NO 7; PP. 655-656; BIBL. 3 REF.Article
EFFET PHOTOVOLTAIQUE DANS UNE STRUCTURE P.I.NALTAJSKIJ YU M; KISELEV VS.1975; RADIOTEKH. I ELEKTRON.; S.S.S.R.; DA. 1975; VOL. 20; NO 12; PP. 2550-2558; BIBL. 14 REF.Article
PROPRIETES DES STRUCTURES P-I-N A CARACTERE NON ORDONNE DU CHAMP ELECTRIQUEEREMIN VK; STROKAN NB; TISNEK NI et al.1975; FIZ. TEKH. POLUPROVODN.; S.S.S.R.; DA. 1975; VOL. 9; NO 3; PP. 530-534; BIBL. 11 REF.Article
SPACE RADIATION DAMAGE MEASUREMENTS IN THE EARTH SYNCHRONOUS ORBIT.SARLES FW JR; STANLEY AG; ROBERGE JK et al.1973; I.E.E.E. TRANS. AEROSPACE ELECTRON. SYST.; U.S.A.; DA. 1973; VOL. 9; NO 6; PP. 921-924; BIBL. 6 REF.Article
INFLUENCE DE L'EFFET DE PEAU SUR LA TEMPERATURE D'UNE DIODE P.I.N. POLARISEE EN DIRECTBOVA NT; MALYUGA VF.1982; IZV. VYSS. UCEBN. ZAVED., RADIOELEKTRON.; ISSN 0021-3470; SUN; DA. 1982; VOL. 25; NO 5; PP. 51-55; BIBL. 14 REF.Article
IONISATION PAR CHOCS DANS UNE STRUCTURE N-I-P A BANDE VARIABLEARUTYUNYAN VM; PETROSYAN SG.1980; FIZ. TEH. POLUPROVODN.; ISSN 0015-3222; SUN; DA. 1980; VOL. 14; NO 10; PP. 2001-2006; BIBL. 13 REF.Article
MEASUREMENT OF THE X-RAY SENSITIVITY OF SILICON DIODES IN THE ENERGY REGION 1.8 TO 5.0 KEV.HOHLFELDER JJ.1974; ADV. X-RAY ANAL.; U.S.A.; DA. 1974; VOL. 17; PP. 531-541; BIBL. 5 REF.; (22ND ANNU. CONF. APPL. X-RAY ANAL. PROC.; DENVER; 1973)Conference Paper
COMPUTER-OPTIMIZED DESIGN OF PIN DIODE ABSORPTION ATTENUATORS.DWORSKY LN.1976; MICROWAVE J.; U.S.A.; DA. 1976; VOL. 19; NO 2; PP. 39-49 (4P.); BIBL. 3 REF.Article
ETUDE DES PARTICULARITES DES COURANTS DE DOUBLE INJECTION DANS LES STRUCTURES P-I-N DE SILICIUM N DOPEES PAR LE ZINCABAKUMOV AA; KARIMOVA IZ; KNIGIN PI et al.1976; FIZ. TEKH. POLUPROVODN.; S.S.S.R.; DA. 1976; VOL. 10; NO 3; PP. 486-489; BIBL. 10 REF.Article
PARTICULARITES DE LA CAPACITE DES STRUCTURES P-I-N A NIVEAUX PROFONDSEREMIN VK; DANENGIRSH SG; STROKAN NB et al.1975; FIZ. TEKH. POLUPROVODN.; S.S.S.R.; DA. 1975; VOL. 9; NO 1; PP. 95-98; BIBL. 8 REF.Article
SWITCHING TIME PERFORMANCE OF MICROWAVE PIN DIODES.MCDADE JC; SCHIAVONE F.1974; MICROWAVE J.; U.S.A.; DA. 1974; VOL. 17; NO 12; PP. 65-68; BIBL. 4 REF.Article
THE PIN STRUCTURE EMPLOYED AS CURRENT AMPLIFIER.KONAK C; KONAKOVA A.1974; CZECHOSL. J. PHYS.; CZECHOSL.; DA. 1974; VOL. 24; NO 9; PP. 1008-1017; BIBL. 19 REF.Article
EST-CE QUE LA RESONANCE SERIE D'UNE DIODE P-I-N EST ESSENTIELLE POUR LE FONCTIONNEMENT D'UN COMMUTATEUR UHF.LEBEDEV IV.1974; IZVEST. VYSSH. UCHEBN. ZAVED., RADIOELEKTRON.; S.S.S.R.; DA. 1974; VOL. 17; NO 7; PP. 20-23; BIBL. 7 REF.Article
GENERATEUR DE FONCTION RESISTIF POUR UHF A DIODES P-I-NPERLIN BG; SHMILEVICH MS.1974; IZVEST. VYSSH. UCHEBN. ZAVED., PRIBOROSTR.; S.S.S.R.; DA. 1974; VOL. 17; NO 4; PP. 104-107; BIBL. 2 REF.Article
CARACTERISTIQUE COURANT TENSION D'UNE STRUCTURE P-I-N AU SILICIUM COMPENSEZOLOTAREV VI; MUZYUKIN LP; MURYGIN VI et al.1973; FIZ. TEKH. POLUPROVODN.; S.S.S.R.; DA. 1973; VOL. 7; NO 2; PP. 371-375; BIBL. 4 REF.Serial Issue
METHODE OPTIQUE DE DETERMINATION DES PARAMETRES DES DOMAINES FORTEMENT DOPES DES STRUCTURES P+-I-N+GRODNENSKIJ IM; SOKOLOV YU F; CHERNYKH IN et al.1982; RADIOTEKH. I ELEKTRON.; SUN; DA. 1982; VOL. 27; NO 3; PP. 583-585; BIBL. 4 REF.Article
A 100 KW SOLID-STATE COAXIAL LIMITER FOR L-BAND. IPATEL SD; GOLDIE H.1981; MICROWAVE J.; ISSN 0026-2897; USA; DA. 1981; VOL. 24; NO 12; PP. 61-65; BIBL. 7 REF.Article
SIMPLE METHOD OF FABRICATING AND PASSIVATING HIGH POWER PIN DIODES.ROSEN A; SWARTZ GA; DUIGON FC et al.1978; J. ELECTROCHEM. SOC.; USA; DA. 1978; VOL. 125; NO 4; PP. 680-682; BIBL. 5 REF.Article
OPTICAL HETERODYNE DETECTION OF MICROWAVE SIGNALS FROM ACOUSTOOPTICAL INTERACTIONS.FLYNN JT; KAUL R; REEDER TM et al.1976; PROC. I.E.E.E.; U.S.A.; DA. 1976; VOL. 64; NO 3; PP. 388-389; BIBL. 8 REF.Article
SUR LA TENSION DE CLAQUAGE MAXIMUM DANS LES STRUCTURES P.I.NKUZ'MIN VA; MAMONOV VI.1976; RADIOTEKH. I ELEKTRON.; S.S.S.R.; DA. 1976; VOL. 21; NO 3; PP. 648-650; BIBL. 6 REF.Article
SYNTHESE DES COMMUTATEURS A LARGE BANDE EN REALISATION INTEGREE AVEC DES DIODES P-I-NTSYPKIN EH R; GOLOVCHENKO EP.1975; IZVEST. VYSSH. UCHEBN. ZAVED., RADIOELEKTRON.; S.S.S.R.; DA. 1975; VOL. 18; NO 2; PP. 31-36; BIBL. 4 REF.Article
EFFECT OF MOBILE CARRIER DIFFUSION AND ITS TREATMENT IN SIMULATION PROGRAMS FOR P-I-N SWITCHES AND LIMITERS.ROSE FWG.1974; SOLID-STATE ELECTRON.; G.B.; DA. 1974; VOL. 17; NO 7; PP. 761-762; BIBL. 4 REF.Article
ON THE THEORY OF TRANSIENT PROCESS AFTER REVERSAL OF A P-I-N DIODE CURRENT FROM FORWARD TO REVERSE DIRECTION (II)ARONOV DA; MAMATKULOV R.1973; PHYS. STATUS SOLIDI, A; ALLEM.; DA. 1973; VOL. 15; NO 1; PP. 351-359; ABS. RUSSE; BIBL. 5 REF.Serial Issue
QUANTUM YIELD OF P-I-N PHOTODIODESLI SS; LINDHOLM FA.1973; PHYS. STATUS SOLIDI, A; ALLEM.; DA. 1973; VOL. 15; NO 1; PP. 237-245; ABS. ALLEM.; BIBL. 15 REF.Serial Issue