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DOUBLE VELOCITY IMPATT DIODESADLERSTEIN MG; STATZ H.1979; I.E.E.E. TRANS. ELECTRON DEVICES; USA; DA. 1979; VOL. 26; NO 5; PP. 817-819; BIBL. 9 REF.Article

LARGE-SIGNAL RESISTANCE OF IMPATT DIODES OBTAINED FROM RF-POWER TO DC-CURRENT CHARACTERISTICS.DETLEFSEN J; SCHUCK WD.1974; NACHR.-TECH. Z.; DTSCH.; DA. 1974; VOL. 27; NO 7; PP. 280-282; ABS. ALLEM.; BIBL. 9 REF.Article

UN AMPLIFICATEUR A DEUX ETAGES AVEC DIODES IMPATT.WILLING HA.1974; J. TELECOMMUNIC.; SUISSE; DA. 1974; VOL. 41; NO 7; PP. 439-445; BIBL. 4 REF.Article

A LOW-NOISE 80-GHZ SILICON IMPATT OSCILLATOR HIGHLY STABILIZED WITH A TRANSMISSION CAVITY.NAGANO S; OHNAKA S.1974; I.E.E.E. TRANS. MICROWAVE THEORY TECH.; U.S.A.; DA. 1974; VOL. 22; NO 12 PART. 2; PP. 1152-1159; BIBL. 19 REF.Article

HIGH-POWER 11 GHZ AMPLIFIER USING HIGH-EFFICIENCY IMPATT DIODES.THORPE W; HUISH P.1978; ELECTRON. LETTERS; GBR; DA. 1978; VOL. 14; NO 16; PP. 508-509; BIBL. 2 REF.Article

DESIGN CONSIDERATIONS OF HIGH-EFFICIENCY DOUBLE-DRIFT SILICON IMPATT DIODES.LANG CHEE CHANG; DING HUA HU; CHAO CHEN WANG et al.1977; I.E.E.E. TRANS. ELECTRON DEVICES; U.S.A.; DA. 1977; VOL. 24; NO 6; PP. 655-657; BIBL. 10 REF.Article

PREMATURE COLLECTION MODE IN IMPATT DIODES.KUVAS RL; SCHROEDER WE.1975; I.E.E.E. TRANS. ELECTRON DEVICES; U.S.A.; DA. 1975; VOL. 22; NO 8; PP. 549-558; BIBL. 20 REF.Article

BIAS-TUNED DOUBLE-DRIFT IMPATT DIODES FOR WIDE-BANDWIDTH OPERATION.YING RS; LEE DH.1975; ELECTRON. LETTERS; G.B.; DA. 1975; VOL. 11; NO 15; PP. 345-346; BIBL. 5 REF.Article

EPITAXIALLY GROWN DOUBLE-DRIFT SILICON IMPATT DIODES AT 60 TO 90 GHZ.HOWARD AM; SMITH DJ; PURCELL JJ et al.1974; ELECTRON. LETTERS; G.B.; DA. 1974; VOL. 10; NO 21; PP. 443-445; BIBL. 4 REF.Article

OPTIMUM JUNCTION DIAMETERS OF 80-GHZ BAND IMPATT DIODES.OHMORI M.1974; PROC. I.E.E.E.; U.S.A.; DA. 1974; VOL. 62; NO 4; PP. 537-538; BIBL. 8 REF.Article

SILICON IMPATT CASCADED AMPLIFIER: 6W (C.W.) AT 9.6 GHZ.BRADDOCK PW; HODGES RD; GENNER R et al.1974; ELECTRON. LETTERS; G.B.; DA. 1974; VOL. 10; NO 25-26; PP. 538-540Article

A SMALL SIGNAL ANALYSIS OF AN IMPATT DEVICE HAVING TWO AVALANCHE LAYERS INTERSPACED BY A DRIFT LAYER.SOM B; PAL BB; ROY SK et al.1974; SOLID-STATE ELECTRON.; G.B.; DA. 1974; VOL. 17; NO 10; PP. 1029-1038; BIBL. 8 REF.Article

A CURRENT-EXCITED LARGE-SIGNAL ANALYSIS OF IMPATT DEVICES AND ITS CIRCUIT IMPLICATIONSMADHU SUDAN GUPTA; LOMAX RJ.1973; I.E.E.E. TRANS. ELECTRON. DEVICES; U.S.A.; DA. 1973; VOL. 20; NO 4; PP. 395-399; BIBL. 9 REF.Serial Issue

IMPATTS SHOOT FOR GUNN NOISE LEVELSLEVINE PA; HUANG HC; JOHNSON H et al.sdMICROWAVES; MICROWAVES; (1972); VOL. 11; NO 4; PP. 52-56 (3 P.); BIBL. 13 REF.Serial Issue

MODULATION D'UNE ONDE ELECTROMAGNETIQUE DANS UNE DIODE IMPATT DISTRIBUEEKURNAUKHOV AV.1980; IZV. VYSS. UCEBN. ZAVED., RADIOFIZ.; ISSN 0021-3462; SUN; DA. 1980; VOL. 23; NO 12; PP. 1507-1510; ABS. ENG; BIBL. 7 REF.Article

EQUAL-AREAS RULE FOR GALLIUM-ARSENIDE AVALANCHE DIODES.CARROLL JE; CULSHAW B; GIBLIN RA et al.1975; ELECTRON. LETTERS; G.B.; DA. 1975; VOL. 11; NO 15; PP. 316-318; BIBL. 6 REF.Article

HIGH EFFICIENCY IMPATT DIODES.IRVIN JC; RYDER RM.1975; APPL. SOLID STATE SCI.; U.S.A.; DA. 1975; VOL. 5; PP. 1-67; BIBL. 2 P. 1/2Article

A SIMPLE APPROXIMATE METHOD OF ESTIMATING THE EFFECT OF CARRIER DIFFUSION IN IMPATT DIODES.MADHU SUDAN GUPTA.1975; SOLID-STATE ELECTRON.; G.B.; DA. 1975; VOL. 18; NO 4; PP. 327-330; BIBL. 6 REF.Article

MILLIMETERWAVE IMPATT OSCILLATOR.IWAI F; HAYASHI H; FUJITA T et al.1974; FUJITSU SCI. TECH. J.; JAP.; DA. 1974; VOL. 10; NO 1; PP. 55-74; BIBL. 4 REF.Article

IMPATT DEVICES.sdIN: MICROWAVE SEMICOND. DEVICES, CIRCUITS APPL. PROC. 4TH BIENN. CORNELL ELECTR. ENG. CONF.; ITHACA, N.Y.; 1973; ITHACA, N.Y.; CORNELL UNIV.; DA. S.D.; PP. 287-358; BIBL. DISSEM.Conference Paper

FM NOISE MEASUREMENT OF W-BAND IMPATT DIODES WITH A QUASIOPTICAL DIRECT DETECTION SYSTEMHARTH W; LEISTNER D; FREYER J et al.1982; ELECTRONICS LETTERS; ISSN 0013-5194; GBR; DA. 1982; VOL. 18; NO 9; PP. 355-356; BIBL. 5 REF.Article

A 63-W W-BAND INJECTION-LOCKED PULSED SOLID-STATE TRANSMITTERHUAN CHUN YEN; KAI CHANG.1981; IEEE TRANS. MICROWAVE THEORY TECH.; ISSN 0018-9480; USA; DA. 1981; VOL. 29; NO 12; PP. 1292-1297; BIBL. 6 REF.Article

THE IMPATT STORY.DE LOACH BC JR.1976; I.E.E.E. TRANS. ELECTRON DEVICES; U.S.A.; DA. 1976; VOL. 23; NO 7; PP. 657-660; BIBL. 14 REF.Article

EFFECT OF HEAVIER DOPED JUNCTION SIDE ON EFFICIENCY OF SI IMPATT DIODES.VOLLMANN E.1975; PROC. I.E.E.E.; U.S.A.; DA. 1975; VOL. 63; NO 8; PP. 1615-1617; BIBL. 11 REF.Article

FREQUENCY CHARACTERISTICS OF IMPATTS.HIRACHI Y; TOYAMA Y; SHINODA M et al.1974; FUJITSU SCI. TECH. J.; JAP.; DA. 1974; VOL. 10; NO 3; PP. 105-122; BIBL. 9 REF.Article

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