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HIGH EFFICIENCY IMPATT DIODES.IRVIN JC; RYDER RM.1975; APPL. SOLID STATE SCI.; U.S.A.; DA. 1975; VOL. 5; PP. 1-67; BIBL. 2 P. 1/2Article

MULTIPLICATION FACTORS AND BREAKDOWN VOLTAGES OF SILICON READ DIODES WITH WIDE DEPLETION REGIONS.BEHRENDT R.1975; PHYS. STATUS SOLIDI, A; ALLEM.; DA. 1975; VOL. 27; NO 2; PP. 489-498; ABS. ALLEM.; BIBL. 12 REF.Article

A SELF-LIMITING ANODIC ETCH-TO-VOLTAGE (AETV) TECHNIQUE FOR FABRICATION OF MODIFIED READ-IMPATTS.NIEHAUS WC; SCHWARTZ B.1976; SOLID-STATE ELECTRON.; G.B.; DA. 1976; VOL. 19; NO 3; PP. 175-180; H.T. 1; BIBL. 17 REF.Article

AVALANCHE RESPONSE TIME IN GAAS AS DETERMINED FROM MICROWAVE ADMITTANCE MEASUREMENTSADLERSTEIN MG; MCCLYMONDS JW; STATZ H et al.1981; IEEE TRANS. ELECTRON DEVICES; ISSN 0018-9383; USA; DA. 1981; VOL. 28; NO 7; PP. 808-811; BIBL. 12 REF.Article

POWER LOSSES AND OPTIMUM OPERATION CONDITIONS OF SILICON QUASI-READ DIODESMAU CHUNG CHANG; MAO CHIENCHEN.1980; SOLID-STATE ELECTRON; GBR; DA. 1980; VOL. 23; NO 6; PP. 621-626; BIBL. 10 REF.Article

ANALYSIS OF LARGE-SIGNAL NOISE IN READ OSCILLATORSSJOLUND A.1972; SOLID-STATE ELECTRON.; G.B.; DA. 1972; VOL. 15; NO 9; PP. 971-978; BIBL. 13 REF.Serial Issue

ANALYTIC NONLINEAR STUDY ON READ DIODE AVALANCHE REGIONNIGRIN J.1972; PROC. I.E.E.E.; U.S.A.; DA. 1972; VOL. 60; NO 7; PP. 916-917; BIBL. 7 REF.Serial Issue

HIGHLY RELIABLE PULSED GAAS READ DIODES.GOLDWASSER RE; LONG SI; TERZIAN P et al.sdIN: ACT. SEMICOND. DEV. MICROWAVES INTEGRATED OPT. BIENN. CORNELL ELECTR. ENG. CONF. 5. PROC.; ITHACA, N.Y.; 1975; S.L.; DA. S.D.; PP. 367-376; BIBL. 10 REF.Conference Paper

SELF-CONSISTENT SOLUTIONS FOR IMPATT DIODE NETWORKSBRAZIL TJ; SCANLAN SO.1981; IEEE TRANS. MICROWAVE THEORY TECH.; ISSN 0018-9480; USA; DA. 1981; VOL. 29; NO 1; PP. 26-32; BIBL. 16 REF.Article

EFFECTS OF DEPLETION-LAYER MODULATION ON SPURIOUS OSCILLATIONS IN IMPATT DIODES.TANG P; HADDAD GI.1977; I.E.E.E. TRANS. MICROWAVE THEORY TECH.; U.S.A.; DA. 1977; VOL. 25; NO 9; PP. 734-741; BIBL. 5 REF.Article

C.W. OPERATION OF ION-IMPLANTED GAAS READ-TYPE IMPATT DIODES.BERENZ JJ; YING RS; LEE DH et al.1974; ELECTRON. LETTERS; G.B.; DA. 1974; VOL. 10; NO 9; PP. 157-158; BIBL. 6 REF.Article

DOUBLE VELOCITY IMPATT DIODESADLERSTEIN MG; STATZ H.1979; I.E.E.E. TRANS. ELECTRON DEVICES; USA; DA. 1979; VOL. 26; NO 5; PP. 817-819; BIBL. 9 REF.Article

HIGH-POWER PULSED GAAS DOUBLE-DRIFT HYBRID-READ IMPATT DIODES FOR X-BANDBERENZ JJ; KINOSHITA J; HIERL TL et al.1979; ELECTRON. LETTERS; GBR; DA. 1979; VOL. 15; NO 10; PP. 277-278; BIBL. 5 REF.Article

HIGH-POWER C BAND READ IMPATT DIODES.ADLERSTEIN MG; WALLACE RN; STEELE SR et al.1975; ELECTRON. LETTERS; G.B.; DA. 1975; VOL. 11; NO 18; PP. 430-431; BIBL. 3 REF.Article

HIGH-POWER HIGH-EFFICIENCY OPERATION OF READ-TYPE IMPATT-DIODE OSCILLATORSKIM C; STEELE R; BIERIG R et al.1973; ELECTRON. LETTERS; G.B.; DA. 1973; VOL. 9; NO 8-9; PP. 173-174; BIBL. 8 REF.Serial Issue

READ-TYPE VARACTORS FOR PARAMETRIC AMPLIFIER APPLICATIONSPETERSON DF; HADDAD GI.1980; IEEE TRANS. MICROWAVE THEORY TECH.; ISSN 0018-9480; USA; DA. 1980; VOL. 28; NO 9; PP. 945-951; BIBL. 2 REF.Article

EFFICIENCY VERSUS DOPING PROFILE IN GAAS READ-TYPE IMPATT DIODES.HASEGAWA F; AONO Y.1974; PROC. I.E.E.E.; U.S.A.; DA. 1974; VOL. 62; NO 5; PP. 641-643; BIBL. 11 REF.Article

GAAS SCHOTTKY-READ DIODES FOR X-BAND OPERATION. = DIODES DE SCHOTTKY-READ A L'ARSENIURE DE GALLIUM POUVANT FONCTIONNER DANS LA BANDE DE 5 A 11 GHZWISSEMAN WR; SHAW DW; ADAMS RL et al.1974; I.E.E.E. TRANS. ELECTRON DEVICES; U.S.A.; DA. 1974; VOL. 21; NO 6; PP. 317-323; BIBL. 21 REF.Article

MILLIMETER-WAVE SILICON IMPATT SOURCES AND COMBINERS FOR THE 110-260-GHZ RANGEKAI CHANG; THROWER WF; HAYASHIBARA GM et al.1981; IEEE TRANS. MICROWAVE THEORY TECH.; ISSN 0018-9480; USA; DA. 1981; VOL. 29; NO 12; PP. 1278-1284; BIBL. 9 REF.Article

MILLIMETER-WAVE GAAS READ IMPATT DIODESADLERSTEIN MG; WALLACE RN; STEELE SR et al.1978; I.E.E.E. TRANS. ELECTRON DEVICES; USA; DA. 1978; VOL. 25; NO 9; PP. 1151-1156; BIBL. 12 REF.Article

AVALANCHE DIODE OSCILLATORS. I. BASIC CONCEPTS.CULSHAW B; GIBLIN RA; BLAKEY PA et al.1974; INTERNATION. J. ELECTRON.; G.B.; DA. 1974; VOL. 37; NO 5; PP. 577-632; BIBL. 33 REF.Article

PROGRESS WITH CW IMPATT DIODE CIRCUITS AT MICROWAVE FREQUENCIESGEWARTOWSKI JW.1979; I.E.E.E. TRANS. MICROWAVE THEORY TECH.; USA; DA. 1979; VOL. 27; NO 5; PP. 434-442; BIBL. 56 REF.Article

LARGE-SIGNAL DYNAMIC LOSS IN GALLIUM ARSENIDE READ AVALANCHE DIODESSTATZ H; HAUS HA; PUCEL RA et al.1978; I.E.E.E. TRANS. ELECTRON DEVICES; USA; DA. 1978; VOL. 25; NO 1; PP. 22-33; BIBL. 6 REF.Article

FORMATION OF SILICON P+PI PNVN+ STRUCTURE BY EPITAXIAL GROWTH.TAKAHASHI K; TAKAMIYA S; MITSUI S et al.1977; JAP. J. APPL. PHYS.; JAP.; DA. 1977; VOL. 16; SUPPL. 1; PP. 99-102; BIBL. 3 REF.; (CONF. SOLID STATE DEVICES. 8. PROC.; TOKYO; 1976)Conference Paper

IMPATT DEVICE SIMULATION AND PROPERTIES.BAUHAHN P; HADDAD GI.1977; I.E.E.E. TRANS. ELECTRON DEVICES; U.S.A.; DA. 1977; VOL. 24; NO 6; PP. 634-642; BIBL. 23 REF.Article

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