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ON METAL-SEMICONDUCTOR DIODES FABRICATED BY ELECTRODEPOSITION TECHNIQUESGHOSH K; CHOWDHURY NKD.1983; INTERNATIONAL JOURNAL OF ELECTRONICS THEORETICAL & EXPERIMENTAL; ISSN 0020-7217; GBR; DA. 1983; VOL. 54; NO 5; PP. 615-624; BIBL. 16 REF.Article

CALCUL DES PROCESSUS TRANSITOIRES DANS UNE DIODE SEMICONDUCTRICE.GORODETSKIJ SM; LITOVSKIJ MA; RIVKIND V YA et al.1978; RADIOTEKH. I ELEKTRON.; SUN; DA. 1978; VOL. 23; NO 7; PP. 1514-1519; BIBL. 6 REF.Article

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ON THE MAGNETOSENSITIVITY OF SEMICONDUCTOR DIODE STRUCTURES WITH STRONG CARRIER ACCUMULATIONGILENKO MS; KARAGEORGY ALKALAEV PM; LEIDERMAN A YU et al.1981; PHYSICA STATUS SOLIDI. (A). APPLIED RESEARCH; ISSN 0031-8965; DDR; DA. 1981; VOL. 68; NO 2; PP. K165-K169; BIBL. 12 REF.Article

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COMMUTATEURS MICRO-ONDES A DIODES SEMICONDUCTRICES, ELECTRIQUEMENT COMMANDESIL'CHENKO ME; OSIPOV VG.1977; IZVEST. VYSSH. UCHEBN. ZAVED., RADIOELEKTRON.; S.S.S.R.; DA. 1977; VOL. 20; NO 2; PP. 5-17; BIBL. 1 P. 1/2Article

MICROELECTRONICSBURKE BE; COHEN RA; CLOUGH TF et al.1972; SOLID STATE RES.; U.S.A.; DA. 1972; NO 4; PP. 47-54; BIBL. 5 REF.Serial Issue

DEPLETION LAYER EFFECTS IN THE OPEN-CIRCUIT-VOLTAGE-DECAY LIFETIME MEASUREMENTMAHAN JE; BARNES DL.1981; SOLID-STATE ELECTRON.; ISSN 0038-1101; GBR; DA. 1981; VOL. 24; NO 10; PP. 989-994; BIBL. 12 REF.Article

A DIFFICULTY IN THE THEORY OF P⁺-N JUNCTION DIODE NOISEVAN DER ZIEL A.1979; SOLID-STATE ELECTRON.; GBR; DA. 1979; VOL. 22; NO 9; PP. 771-772; BIBL. 2 REF.Article

BULK CARRIER LIFETIME MEASUREMENT FROM TRANSIENT DIFFUSION PHOTOCURRENT IN SEMICONDUCTOR DIODESBIELLE DASPET DM; GASSET GD.1978; SOLID-STATE ELECTRON.; GBR; DA. 1978; VOL. 21; NO 10; PP. 1219-1226; BIBL. 16 REF.Article

DISTRIBUTION SPECTRALE ET EFFICACITE DU RAYONNEMENT D'UNE DIODE SEMICONDUCTRICE A POLARISATION INVERSEKOSYACHENKO LA.1982; Z. TEH. FIZ.; ISSN 0044-4642; SUN; DA. 1982; VOL. 52; NO 4; PP. 779-781; BIBL. 4 REF.Article

TRANSIENT PARAMETERS OF THE PLANE JUNCTION INFINITE BASE SEMICONDUCTOR DIODE WITH BARRIER CAPACITANCETOMESCU FMG.1979; REV. ROUMAINE SCI. TECH., ELECTROTECH. ENERGET.; ROM; DA. 1979; VOL. 24; NO 1; PP. 99-108; BIBL. 5 REF.Article

NOUVEAU DISPOSITIF D'AMPLIFICATION ET DE LOCALISATION DE PHOTOELECTRONS ASSOCIANT UN TUBE A VIDE ET UNE CIBLE A SEMI-CONDUCTEURSGARIOD R; ALLEMAND R; THOMAS G et al.sd; FRA; DA. S.D.; DGRST/76 7 0819; PAG. MULT.; 30 CM; ACTION CONCERTEE: INSTRUMENTS DE MESUREReport

BRUITS DE GENERATION-RECOMBINAISON LORS DE L'INJECTION BIPOLAIRE DANS UN SEMI-ISOLANTZALETAEV NB; SEREBRENNIKOV PS; STAFEEV VI et al.1982; FIZ. TEH. POLUPROVODN.; ISSN 0015-3222; SUN; DA. 1982; VOL. 16; NO 2; PP. 324-330; BIBL. 6 REF.Article

MESURE DES CARACTERISTIQUES DES DIODES LORS DU RECHAUFFEMENT DES ELECTRONS PAR UN CHAMP ULTRA HAUTE FREQUENCEGALCHENKOV LA; KUKUSHKIN VV; SOLYAKOV VN et al.1981; PRIB. TEH. EKSP.; ISSN 0032-8162; SUN; DA. 1981; NO 4; PP. 228-230; BIBL. 6 REF.Article

TRANSIENT RESPONSE SIMULATION OF SEMICONDUCTOR DIODES WITH DEEP IMPURITY LEVELSYAMAMOTO T; NAGAI M; HARIU T et al.1979; JAP. J. APPL. PHYS.; JPN; DA. 1979; VOL. 18; NO 4; PP. 771-777; BIBL. 8 REF.Article

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CARACTERISTIQUES A HAUTE FREQUENCE DES DIODES SEMICONDUCTRICES A STRUCTURE LAMELLAIRETAGER AS.1977; FIZ. TEKH. POLUPROVODN.; S.S.S.R.; DA. 1977; VOL. 11; NO 12; PP. 2322-2329; BIBL. 4 REF.Article

Current oscillations in semiconductor diodes under streaming instability conditionsGRUZINSKIS, V; REKLAITIS, A.Electronics Letters. 1983, Vol 19, Num 18, pp 733-734, issn 0013-5194Article

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