MECHANISM OF ELECTRICAL BREAKDOWN IN SIO₂ FILMS.RIDLEY BK.1975; J. APPL. PHYS.; U.S.A.; DA. 1975; VOL. 46; NO 3; PP. 998-1007; BIBL. 49 REF.Article

CARRIER INJECTION INTO SIO₂ FROM SI SURFACE DRIVEN TO AVALANCHE BREAKDOWN BY A LINEAR RAMP PULSE, AND TRAPPING, DISTRIBUTION AND THERMAL ANNEALING OF INJECTED HOLES IN SIO₂.NAGAI K; HAYASHI Y; TARUI Y et al.1975; JAP. J. APPL. PHYS.; JAP.; DA. 1975; VOL. 14; NO 10; PP. 1539-1545; BIBL. 11 REF.Article

PROPERTIES OF SURFACE IONS ON SIO₂GEORGIEV VK; DIMOV VI.1972; C.R. ACAD. BULG. SCI.; BULG.; DA. 1972; VOL. 25; NO 6; PP. 743-746; BIBL. 3 REF.Serial Issue

PHOTORESIST ADHESION FAILURE ON SIO₂ FILMS.1978; CIRCUITS MANUF.; USA; DA. 1978-06; PP. 22-28; (4 P.); BIBL. 4 REF.Article

CONTROL OF PALLADIUM ADHERENCE TO SILICON DIOXIDE FOR PHOTOLITHOGRAPHIC ETCHING.SHIVARAMAN MS; SVENSSON CM.1976; J. ELECTROCHEM. SOC.; U.S.A.; DA. 1976; VOL. 123; NO 8; PP. 1258; BIBL. 5 REF.Article

GUIDES D'ONDES OPTIQUES PAR IMPLANTATION IONIQUE.MOUTONNET D; RAO EVK.1974; VIDE; FR.; DA. 1974; NO 171 SUPPL.; PP. 232-238; BIBL. 7 REF.; (APPL. PROCESSUS ELECTRON. IONIQUES. IVE. CONGR. INT. AVISEM 74Conference Paper

THE DRYOX PROCESS FOR ETCHING SILICON DIOXIDE.BERSIN RL; REICHELDERFER RF.1977; SOLID STATE TECHNOL.; U.S.A.; DA. 1977; VOL. 20; NO 4; PP. 78-80; BIBL. 2 REF.Article

CHARGE STORAGE AND STOICHIOMETRY IN ELECTRON BEAM EVAPORATED ALUMINA.EISELE KM.1975; J. ELECTROCHEM. SOC.; U.S.A.; DA. 1975; VOL. 122; NO 1; PP. 148-152; BIBL. 14 REF.Article

CF₄ ETCHING IN A DIODE SYSTEMBONDUR JA.1979; J. ELECTROCHEM. SOC.; USA; DA. 1979; VOL. 126; NO 2; PP. 226-231; BIBL. 17 REF.Article

POLISHING OF SAPPHIRE WITH COLLOIDAL SILICA.GUTSCHE HW; MOODY JW.1978; J. ELECTROCHEM. SOC.; U.S.A.; DA. 1978; VOL. 125; NO 1; PP. 136-138; BIBL. 13 REF.Article

INFLUENCE DE L'ETAT DE LA SURFACE DU SILICIUM SUR LA LIMITE DE SEPARATION SI-SIO₂ A OXYDE PYROLYTIQUEGURSKIJ LI; RUMAK NV; CHERNYKH AG et al.1976; VESCI AKAD. NAVUK B.S.S.R., FIZ.-TEKH. NAVUK; BYS; DA. 1976; NO 4; PP. 124; IN EXTENSO VINITI NO 1265Article

EFFECT OF A SECONDARY PASSIVATING FILM OF SIO₂ DEPOSITED BY CATHODE SPUTTERING ON THE PARAMETERS OF PLANAR TRANSISTORS.ORLINOV VI; GORANCHEV BG; HRISTOV DK et al.1975; BULG. J. PHYS.; BULG.; DA. 1975; VOL. 2; NO 3; PP. 236-246; ABS. RUSSE; BIBL. 7 REF.Article

ELECTRON RADIATION EFFECTS ON TIME-DEPENDENT DIELECTRIC BREAKDOWN IN SIO₂ FILMS.LI SP; MASERJIAN J.1975; SOLID-STATE ELECTRON.; G.B.; DA. 1975; VOL. 18; NO 3; PP. 287-288; BIBL. 8 REF.Article

BORON AND PHOSPHORUS DIFFUSION THROUGH AN SIO₂ LAYER FROM A DOPED POLYCRYSTALLINE SI SOURCE UNDER VARIOUS DRIVE-IN AMBIENTS.SHIMAKURA K; SUZUKI T; YADOIWA Y et al.1975; SOLID-STATE ELECTRON.; G.B.; DA. 1975; VOL. 18; NO 11; PP. 991-997; H.T. 1; BIBL. 11 REF.Article

SOME RECENT STUDIES OF VERY THIN SIO₂ FILMS.VAN DER MEULEN YJ.1974; J. VACUUM SCI. TECHNOL.; U.S.A.; DA. 1974; VOL. 11; NO 6; PP. 985-989; BIBL. 26 REF.; (SYMP. ELECTRON. STRUCT. PROP. INTERFACES. PROC.; PRINCETON, N.J.; 1973)Conference Paper

ANTI-REFLECTION FILMS AND MULTILAYER STRUCTURES. PHOTODIODE QUANTUM EFFICIENCY.DEWIELE F.sdIN: NATO ADV. STUDY INST. SOLID STATE IMAGING; LOUVAIN; 1975; S.L.; DA. S.D.; PP. (61P.); BIBL. DISSEM.Conference Paper

SELECTIVE ETCHING OF SILICON DIOXIDE USING REACTIVE ION ETCHING WITH CF₄-H₂EPHRATH LM.1979; J. ELECTROCHEM. SOC.; ISSN 0013-4651; USA; DA. 1979; VOL. 126; NO 8; PP. 1419-1421; BIBL. 5 REF.Article

THE EFFECT OF SIO₂ PRECIPITATION IN SI ON GENERATION CURRENTS IN MOS CAPACITORSPATRICK WJ; HU SM; WESTDORP WA et al.1979; J. APPL. PHYS.; USA; DA. 1979; VOL. 50; NO 3 PART. 1; PP. 1399-1402; BIBL. 9 REF.Article

INFLUENCE DU LAVAGE ET DE L'OXYDATION MULTIPLE DE LA SURFACE DU SILICIUM SUR LA DENSITE DES CHARGES DE LA STRUCTURE SI-SIO₂GURSKIJ LI; KUKSO VV; RUMAK NV et al.1976; VESCI AKAD. NAVUK B.S.S.R., FIZ.-TEKH. NAVUK; BYS; DA. 1976; NO 4; PP. 39-40; BIBL. 4 REF.Article

TIME DEPENDENT BREAKDOWN IN SILICON DIOXIDE FILMS.SVENSSON C; SHUMKA A.1975; INTERNATION. J. ELECTRON.; G.B.; DA. 1975; VOL. 38; NO 1; PP. 69-80; BIBL. 3 REF.Article

AMELIORATIONS TECHNOLOGIQUES APPORTEES PAR LES OXYDES "HCL".LACOUR M; VERDONE M.1974; DGRST-7371342; FR.; DA. 1974; PP. 1-29; H.T. 20; BIBL. 1 P. 1/2; (RAPP. FINAL, ACTION CONCERTEE: C.C.M.)Report

EXCITON TRANSPORT IN SIO₂ AS A POSSIBLE CAUSE OF SURFACE-STATE GENERATION IN MOS STRUCTURES.WEINBERG ZA; RUBLOFF GW.1978; APPL. PHYS. LETTERS; U.S.A.; DA. 1978; VOL. 32; NO 3; PP. 184-186; BIBL. 17 REF.Article

PROPERTIES OF SILICON IMPLANTED WITH BORON IONS THROUGH THERMAL SILICON DIOXIDEBAUER LO; MACPHERSON MR; ROBINSON AT et al.1973; SOLID-STATE ELECTRON.; G.B.; DA. 1973; VOL. 16; NO 3; PP. 289-300; H.T. 1; BIBL. 18 REF.Serial Issue

ION IMPLANTATION INTO INSULATORS: CHARGE-REMOVAL STUDIES USING ION-INDUCED CHARACTERISTIC X RAYSBEEZHOLD W; EERNISSE EP.1972; APPL. PHYS. LETTERS; U.S.A.; DA. 1972; VOL. 21; NO 12; PP. 592-595; BIBL. 12 REF.Serial Issue

TRANSPORT OF SODIUM IONS IN SILICON DIOXIDE FILMS USING MOS STRUCTURESINGH BR; RAI SS; SRISVASTAVA RS et al.1972; PHYS. STATUS SOLIDI, A; ALLEM.; DA. 1972; VOL. 13; NO 1; PP. 51-59; ABS. ALLEM.; BIBL. 23 REF.Serial Issue