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THE CARACTERISTICS AND PROPERTIES OF OPTIMISED AMORPHOUS SILICON FIELD EFFECT TRANSISTORSMACKENZIE KD; SNELL AJ; FRENCH I et al.1983; APPLIED PHYSICS. A, SOLIDS AND SURFACES; ISSN 0721-7250; DEU; DA. 1983; VOL. 31; NO 2; PP. 87-92; BIBL. 22 REF.Article

NUCLEATION THEORY OF THRESHOLD SWITCHING IN VANADATE-GLASS DEVICESGATTEF E; DIMITRIEV Y.1981; PHILOS. MAG., B; ISSN 0141-8637; GBR; DA. 1981; VOL. 43; NO 2; PP. 333-343; BIBL. 34 REF.Article

AN ELECTROTHERMAL MODEL FOR THRESHOLD SWITCHING IN THIN AMORPHOUS CHALCOGENIDE FILMSSHAW MP; SUBHANI KF.1981; SOLID-STATE ELECTRON.; ISSN 0038-1101; GBR; DA. 1981; VOL. 24; NO 3; PP. 233-248; BIBL. 42 REF.Article

QUELQUES PROPRIETES DES FILAMENTS DE COURANT DANS LES STRUCTURES DE DIODES A BASE DE SEMICONDUCTEURS VITREUXORESHKIN PT; VIKHROV SP; GLEBOV AS et al.1976; FIZ. TEKH. POLUPROVODN.; S.S.S.R.; DA. 1976; VOL. 10; NO 3; PP. 511-517; BIBL. 16 REF.Article

ETUDE DE L'IMPEDANCE EN BASSE FREQUENCE DES STRUCTURES DIODES A BASE DE SEMICONDUCTEURS AMORPHES DU SYSTEME AII-BIV-CVBARYSHEV VG; GASANOV LS; DESHEVOJ AG et al.1972; MIKROELEKTRONIKA; S.S.S.R.; DA. 1972; VOL. 1; NO 1; PP. 85-87; BIBL. 4 REF.Serial Issue

INTRODUCTION A L'ETUDE DES SEMICONDUCTEURS AMORPHES DU TYPE CHALCOGENURES.KUMURDJIAN P; PERE JF.1974; COMMISSAR. ENERG. ATOM., BULL. INFORM. SCI. TECH.; FR.; DA. 1974; NO 194; PP. 47-52; ABS. ANGL.; BIBL. 17 REF.Article

AMORPHOUS SEMICONDUCTOR DEVICES DISPLAYING MEMORY IN ONE POLARITY AND THRESHOLD SWITCHING IN THE OPPOSITE POLARITY.NICOLAIDES RV.1974; APPL. PHYS. LETTERS; U.S.A.; DA. 1974; VOL. 24; NO 7; PP. 331-333; BIBL. 8 REF.Article

THEORETICAL ANALYSIS OF AMORPHOUS-SILICON FIELD-EFFECT-TRANSISTORSKISHIDA S; NARUKE Y; UCHIDA Y et al.1983; JAPANESE JOURNAL OF APPLIED PHYSICS; ISSN 0021-4922; JPN; DA. 1983; VOL. 22; NO 3; PART. 1; PP. 511-517; BIBL. 7 REF.Article

SWITCHING BEHAVIOUR OF AMORPHOUS THRESHOLD DEVICES IN THE GAP CONFIGURATION.MADAN A; ALLISON J; THOMPSON MJ et al.1976; J. NON-CRYST. SOLIDS; NETHERL.; DA. 1976; VOL. 21; NO 1; PP. 1-21; BIBL. 15 REF.Article

RADIATION SENSITIVITY AND AMORPHOUS MATERIALS, PRESENT AND FUTURE.HOLMES SIEDLE AG.1974; REP. PROGR. PHYS.; G.B.; DA. 1974; VOL. 37; NO 6; PP. 699-769; BIBL. 3 P.Article

ON THE RELIABILITY OF AMORPHOUS CHALCOGENIDE SWITCHING DEVICESSCHUOCKER D; RIEDER G.1978; J. NON-CRYST. SOLIDS; NLD; DA. 1978; VOL. 29; NO 3; PP. 397-407; BIBL. 16 REF.Article

BEITRAG ZUR FREQUENZABHAENGIGKEIT DES REVERSIBLEN SCHALTVERHALTENS GLASARTIGER HALBLEITERBAUELEMENTE. = CONTRIBUTION SUR LA DEPENDANCE PAR RAPPORT A LA FREQUENCE DU COMPORTEMENT DE COMMUTATION REVERSIBLE DE COMPOSANTS SEMICONDUCTEURS VITREUXWOLLENBERG G; WOBST M.1974; NACH.-TECH., ELEKTRON.; DTSCH.; DA. 1974; VOL. 24; NO 7; PP. 247-249; ABS. RUSSE ANGL. FR.; BIBL. 22 REF.Article

A SELF-ALIGNMENT PROCESS FOR AMORPHOUS SILICON THIN FILM TRANSISTORSKODAMA T; TAKAGI N; KAWAI S et al.1982; ELECTRON DEVICE LETTERS; ISSN 0193-8576; USA; DA. 1982; VOL. 3; NO 7; PP. 187-189; BIBL. 12 REF.Article

TRANSFORMATION FROM OHMIC TO OFFSET BEHAVIOR FOR THE ON STATE OF AN AMORPHOUS SEMICONDUCTOR THRESHOLD SWITCH FOR INTERRUPTIONS GREATER THAN 12 NSVEZZOLI GC.1979; APPL. PHYS. LETT.; ISSN 0003-6951; USA; DA. 1979; VOL. 35; NO 3; PP. 288-290; BIBL. 8 REF.Article

NOTE ON THE THICKNESS DEPENDENCE OF THE THRESHOLD VOLTAGE OF AMORPHOUS SWITCHING DEVICES.BARANCOK D; DIESKA P.1976; ACTA PHYS. SLOV.; TCHECOSL.; DA. 1976; VOL. 26; NO 4; PP. 277-280; BIBL. 6 REF.Article

THE ON-STATE OF THE AMORPHOUS SEMICONDUCTOR DEVICE.BUCKLEY WD.1976; APPL. PHYS. LETTERS; U.S.A.; DA. 1976; VOL. 29; NO 11; PP. 743-746; BIBL. 4 REF.Article

AMORPHOUS SEMICONDUCTOR DEVICES: MEMORY AND SWITCHING MECHANISMLAKSHMINARAYAN KN; SRIVASTAVA KK; PANWAR OS et al.1981; J. INSTIT. ELECTRON. TELECOMMUNIC. ENGRS; IND; DA. 1981; VOL. 27; NO 1; PP. 16-19; BIBL. 9 REF.Article

NEW AMORPHOUS-SILICON ELECTRICALLY PROGRAMMABLE NONVOLATILE SWITCHING DEVICEOWEN AE; LE COMBER PG; SARRABAYROUSE G et al.1982; IEE PROCEEDINGS. PART I. SOLID-STATE AND ELECTRON DEVICES; ISSN 0143-7100; GBR; DA. 1982; VOL. 129; NO 2; PP. 51-54; BIBL. 17 REF.Article

REVERSIBLE MONOPOLAR SWITCHING IN VANADIUM-TELLURITE GLASS THRESHOLD DEVICESGATTEF E; DIMITRIEV Y.1979; PHILOS. MAG., B; GBR; DA. 1979; VOL. 40; NO 3; PP. 233-242; BIBL. 35 REF.Article

AMORPHOUS-SILICON FET ARRAY FOR LCD PANELKATOH K; YASUI M; KUNIYASU S et al.1983; ELECTRONICS LETTERS; ISSN 0013-5194; GBR; DA. 1983; VOL. 19; NO 14; PP. 506-507; BIBL. 10 REF.Article

RECTIFICATION BEHAVIOR OF THE AMORPHOUS SEMICONDUCTOR SE32TE32AS4GE32TERZIYSKI V; MIYAZONO T; SHIRAISHI T et al.1981; THIN SOLID FILMS; ISSN 0040-6090; CHE; DA. 1981; VOL. 78; NO 3; PP. 223-227; BIBL. 4 REF.Article

SINGLE FAST-PULSED INTERRUPTION OF ON STATE OF AMORPHOUS THRESHOLD SWITCH: I-V DECAY CURVE AND TRAPPED-CARRIER LIFETIMEVEZZOLI GC.1981; PHYS. REV. B; ISSN 0163-1829; USA; DA. 1981; VOL. 23; NO 2; PP. 879-882Article

ELECTRIC FIELD LINE BENDING LIMITED ELASTOMER DEFORMATION IN AN A-SE TYPE DEFORMOGRAPHIC LIGHT WAVE.LAKATOS AI.1977; J. APPL. PHYS.; U.S.A.; DA. 1977; VOL. 48; NO 6; PP. 2346-2355; BIBL. 9 REF.Article

Commutation à basse température de chalcogénures vitreux semiconducteursKVASKOV, V. B; PAROL, N. V; IOFIS, N. A et al.Fizika i tehnika poluprovodnikov. 1984, Vol 18, Num 11, pp 2079-2082, issn 0015-3222Article

CONTRIBUTION A L'ETUDE DES PROPRIETES ELECTRIQUES DE STRUCTURES AMORPHES ARSENIC-SELENIUM.MARUCCHI J.1974; AO-CNRS-10786; FR.; DA. 1974; PP. 1-93; BIBL. 2 P.; (THESE DOCT. SCI. PHYS.; UNIV. SCI. TECH. LANGUEDOC)Thesis

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