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Results 1 to 25 of 47

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GUNN EFFECT FUNCTIONAL DEVICES.NAKAMURA T; HASUO S; GOTO G et al.1975; FUJITSU SCI. TECH. J.; JAP.; DA. 1975; VOL. 11; NO 1; PP. 83-106; BIBL. 1 P. 1/2Article

HIGH RATIO FREQUENCY DIVISION WITH THREE-TERMINAL GUNN EFFECT DEVICES.CLAXTON D; MILLS T; YUAN L et al.sdIN: ACT. SEMICOND. DEV. MICROWAVES INTEGRATED OPT. BIENN. CORNELL ELECTR. ENG. CONF. 5. PROC.; ITHACA, N.Y.; 1975; S.L.; DA. S.D.; PP. 195-203; BIBL. 3 REF.Conference Paper

GUNN-EFFECT LOGIC CIRCUITS FOR A HIGH SPEED COMPUTER.HASUO S; NAKAMURA T; GOTO G et al.sdIN: ACT. SEMICOND. DEV. MICROWAVES INTEGRATED OPT. BIENN. CORNELL ELECTR. ENG. CONF. 5. PROC.; ITHACA, N.Y.; 1975; S.L.; DA. S.D.; PP. 185-194; BIBL. 7 REF.Conference Paper

NEGATIVE CONDUCTANCE MEASUREMENTS OF GUNN DEVICES IN THE X-BAND FREQUENCY RANGE.MATHUR PC; DHALL AK; LOMASH SK et al.1976; INTERNATION. J. ELECTRON.; G.B.; DA. 1976; VOL. 40; NO 1; PP. 97-103; BIBL. 11 REF.Article

GIGABIT RATE GUNN-EFFECT SHIFT REGISTER.YANAGISAWA S; WADA O; TAKANASHI H et al.1975; IN: INT. ELECTRON DEVICES MEET.; WASHINGTON, D.C.; 1975; NEW YORK; INST. ELECTR. ELECTRON. ENG.; DA. 1975; PP. 317-319; BIBL. 4 REF.Conference Paper

HIGHLY SENSITIVE PLANAR GUNN DIGITAL DEVICE.KURUMADA K; MIZUTANI T.1975; REV. ELECTR. COMMUNIC. LAB.; JAP.; DA. 1975; VOL. 23; NO 11-12; PP. 1197-1206; BIBL. 20 REF.Article

PLANAR GUNN-EFFECT LOGIC DEVICE WITH TWO SEPARATED CATHODES.MASUDA M; NISHIDA M; KIMURA M et al.1975; ELECTRON. LETTERS; G.B.; DA. 1975; VOL. 11; NO 15; PP. 320-321; BIBL. 4 REF.Article

GAAS PLANAR GUNN DIGITAL DEVICES BY SULPHUR-IONIMPLANTATION. = DISPOSITIFS NUMERIQUES A EFFET GUNN PLANAR GAAS PAR IMPLANTATION IONIQUE DE SOUFREMILUTANI T; KURUMADA K.1975; ELECTRON. LETTERS; G.B.; DA. 1975; VOL. 11; NO 25-26; PP. 638-639; BIBL. 6 REF.Article

PROGRESS WITH IN P TRANSFERRED ELECTRON DEVICES.COLLIVER DJ.sdIN: MICROWAVE SEMICOND. DEVICES, CIRCUITS APPL. PROC. 4TH BIENN. CORNELL ELECTR. ENG. CONF.; ITHACA, N.Y.; 1973; ITHACA, N.Y.; CORNELL UNIV.; DA. S.D.; PP. 11-19; BIBL. 12 REF.Miscellaneous

HEATSINKING GAAS 4-18 GHZ GUNN AND IMPATT DEVICES.LINDSTROEM C; JEPPSSON B.1976; ELECTRON. LETTERS; G.B.; DA. 1976; VOL. 12; NO 3; PP. 66-67; BIBL. 5 REF.Article

CIRCUIT INTEGRATION OF GAAS GUNN DEVICES.MAUSE K; SCHLACHETZKI A; HESSE E et al.1974; I.E.E.E. TRANS. COMMUNIC.; U.S.A.; DA. 1974; VOL. 22; NO 9; PP. 1435-1440; BIBL. 10 REF.Article

ANALYSE DES KLEINSIGNALVERHALTENS VON GUNN-ELEMENTEN. = LE COMPORTEMENT DES ELEMENTS DE GUNN AUX SIGNAUX FAIBLESSCHUFFNY R.1976; NACHR.-TECH., ELEKTRON.; DTSCH.; DA. 1976; VOL. 26; NO 2; PP. 59-64; BIBL. 41 REF.Article

GUNN DEVICE GIGABIT RATE DIGITAL MICROCIRCUITS.MAUSE K; SCHLACHETZKI A; HESSE E et al.1975; I.E.E.E. J. SOLID-STATE CIRCUITS; U.S.A.; DA. 1975; VOL. 10; NO 1; PP. 2-11; BIBL. 21 REF.Article

OPTICAL-PATTERN SWEEP DEVICE USING GUNN EFFECT.OHWADA K; IGO T.1974; REV. ELECTR. COMMUNIC. LAB.; JAP.; DA. 1974; VOL. 22; NO 11-12; PP. 1108-1115; BIBL. 8 REF.Article

A THREE-TERMINAL GUNN-EFFECT DEVICE STRUCTURE FOR INCREASED OUTPUT POWER LEVELS.HERRON L; HARTNAGEL HL.1976; INTERNATION. J. ELECTRON.; G.B.; DA. 1976; VOL. 40; NO 3; PP. 251-255; BIBL. 4 REF.Article

AVALANCHE RELAXATION OSCILLATIONS OBSERVED IN THE PLANAR GUNN DEVICE.WANG SHOU WU; CHENG YI YANG; LIU CHAO CHUNG et al.1975; SCI. SINICA; CHINE; DA. 1975; VOL. 18; NO 6; PP. 735-744; BIBL. 8 REF.Article

LOGIC GATES USING GUNN-EFFECT DEVICES.KAZETANI K; GOTO G; NAKAMURA T et al.1976; FUJITSU SCI. TECH. J.; JAP.; DA. 1976; VOL. 12; NO 4; PP. 99-118; BIBL. 6 REF.Article

TRANSFERRED ELECTRON DEVICES.sdIN: MICROWAVE SEMICOND. DEVICES, CIRCUITS APPL. PROC. 4TH BIENN. CORNELL ELECTR. ENG. CONF.; ITHACA, N.Y.; 1973; ITHACA, N.Y.; CORNELL UNIV.; DA. S.D.; PP. 125-199; BIBL. DISSEM.Conference Paper

REQUIREMENT ON CARRIER-CONCENTRATION AND GEOMETRY OF SCHOTTKY-ELECTRODE-TRIGGERED GUNN DEVICE.HASHIZUME N; TOMIZAWA K.1976; ELECTRON. LETTERS; G.B.; DA. 1976; VOL. 12; NO 9; PP. 232-234; BIBL. 4 REF.Article

A 3-DIMENSIONAL COMPUTER SIMULATION OF THE TRAPPED-DOMAIN MODE IN GUNN DEVICES.ATOHOUN IG; RIGINOS VE; BOHN PP et al.1976; PROC. I.E.E.E.; U.S.A.; DA. 1976; VOL. 64; NO 3; PP. 385-386; BIBL. 7 REF.Article

CHARACTERISTICS AND APPLICATIONS OF A SCHOTTKY-BARRIER-GATE GUNN-EFFECT DIGITAL-DEVICE.SUGETA T; TANIMOTO M; IKOMA T et al.1974; I.E.E.E. TRANS. ELECTRON DEVICES; U.S.A.; DA. 1974; VOL. 21; NO 8; PP. 504-515; BIBL. 44 REF.Article

GAAS PLANAR GUNN DIGITAL DEVICES WITH SUBSIDIARY ANODE.KURUMADA K; MIZUTANI T; FUJIMOTO M et al.1974; ELECTRON. LETTERS; G.B.; DA. 1974; VOL. 10; NO 9; PP. 161-162; BIBL. 8 REF.Article

INTEGRATION OF GAAS M.E.S.F.E.T.S. AND GUNN ELEMENTS IN A 4 BIT-GATE DEVICE.HASHIZUME N; KATAOKA S.1976; ELECTRON. LETTERS; G.B.; DA. 1976; VOL. 12; NO 15; PP. 370-372; BIBL. 13 REF.Article

THRESHOLD CONDITION OF SCHOTTKY GATE-GUNN PULSE DEVICE.UTSUGI Y; HARADA H; KURUMADA K et al.1975; REV. ELECTR. COMMUNIC. LAB.; JAP.; DA. 1975; VOL. 23; NO 3-4; PP. 279-289; BIBL. 13 REF.Article

APPLICATIONS OF TRANSFERRED ELECTRON DEVICES.sdIN: MICROWAVE SEMICOND. DEVICES, CIRCUITS APPL. PROC. 4TH BIENN. CORNELL ELECTR. ENG. CONF.; ITHACA, N.Y. 1973; ITHACA, N.Y.; CORNELL UNIV.; DA. S.D.; PP. 201-286; BIBL. DISSEM.Conference Paper

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