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Results 1 to 25 of 6897

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TWO-DIMENSIONAL NUMERICAL SIMULATION OF BIPOLAR SEMICONDUCTOR DEVICES TAKING INTO ACCOUNT HEAVY DOPING EFFECTS AND FERMI STATISTICSPOLSKY BS; RIMSHANS JS.1983; SOLID-STATE ELECTRONICS; ISSN 0038-1101; GBR; DA. 1983; VOL. 26; NO 4; PP. 275-279; BIBL. 24 REF.Article

KINETICS AND DRIFT OF GATE VOLTAGES FOR ELECTROLYTE-BATHED CHEMICALLY SENSITIVE SEMI CONDUCTOR DEVICESBUCK RP.1982; IEEE TRANS. ELECTRON DEVICES; ISSN 0018-9383; USA; DA. 1982; VOL. 29; NO 1; PP. 108-115; BIBL. 23 REF.Article

LA MICROANALYSE IONIQUE APPLIQUEE A L'ETUDE DES SEMICONDUCTEURS1978; TELONDE; FRA; DA. 1978; NO 2; PP. 32-33Article

RESISTANCE SEMICONDUCTRICE TENSOMETRIQUE A RECOUVREMENT DE FIXATIONKLIMOV VV.1977; IZMERITEL. TEKH.; S.S.S.R.; DA. 1977; NO 9; PP. 39; BIBL. 5 REF.Article

A STRAIN INDICATOR FOR SEMICONDUCTOR STRAIN GAUGES.RAO BSS; GOPAL RAO M.1977; J. PHYS. E; G.B.; DA. 1977; VOL. 10; NO 8; PP. 808-810; BIBL. 3 REF.Article

OPTIMIZED NUMERICAL MODELS FOR SEMICONDUCTOR DEVICES: I.MCAFEE LC JR.1976; I.E.E.E. TRANS. ELECTRON DEVICES; U.S.A.; DA. 1976; VOL. 23; NO 4; PP. 442-447; BIBL. 17 REF.Article

SEMI-CONDUCTORS CONDENSED CATALOG. 1975.1975; BAGNEUX; GIROTYPO; DA. 1975; PP. 1-315; MEME DOC. FRBook

CRITERE DE LA STABILITE THERMIQUE DES DISPOSITIFS SEMICONDUCTEURSVLASOV VA; POPOV PI.1975; IZVEST. VYSSH. UCHEBN. ZAVED., RADIOELEKTRON.; S.S.S.R.; DA. 1975; VOL. 18; NO 1; PP. 124-127; BIBL. 5 REF.Article

GENERATION ACOUSTO-ELECTRIQUE DANS DES SEMICONDUCTEURS A GRANDE MOBILITEZIL'BERMAN PE; MISHIN AG.1975; RADIOTEKH. I ELEKTRON.; S.S.S.R.; DA. 1975; VOL. 20; NO 10; PP. 2140-2146; BIBL. 9 REF.Article

PHOTO-RECEPTEUR SCANISTER MULTILIGNES A INTERROGATION SERIE-PARALLELEBERKOVSKAYA KF; KIRILLOVA NV; KULIMANINA LM et al.1975; MIKROELEKTRONIKA; S.S.S.R.; DA. 1975; VOL. 4; NO 4; PP. 291-298; BIBL. 22 REF.Article

RE'S SERVICE CLINIC.DARR J.1974; RADIO ELECTRON.; U.S.A.; DA. 1974; VOL. 45; NO 12; PP. 71-73Article

STATISTICAL DISTRIBUTION OF NEUTRON SEMICONDUCTOR DEVICE DEGRADATION.MCKENZIE JM.1974; I.E.E.E. TRANS. NUCL. SCI.; U.S.A.; DA. 1974; VOL. 21; NO 5; PP. 23-27; BIBL. 6 REF.Article

COMPUTER SIMULATION OF SEMICONDUCTOR DEVICESREES HD.1973; J. PHYS. C; G.B.; DA. 1973; VOL. 6; NO 2; PP. 262-273; BIBL. 15 REF.Serial Issue

DISPOSITIFS SEMICONDUCTEURS DE LA GAMME UHF A PROPRIETES VOLUMIQUES NON LINEAIRES ET A CONDUCTIVITE DIFFERENTIELLE NEGATIVESKVORTSOVA NE.1973; MIKROELEKTRONIKA; S.S.S.R.; DA. 1973; VOL. 2; NO 2; PP. 99-112; BIBL. 43 REF.Serial Issue

EFFET DE L'INJECTION SUR UN DOMAINE STATIQUELUKASH VS; SHUSHKEVICH VL; LYUZE LL et al.1973; FIZ. TEKH. POLUPROVODN.; S.S.S.R.; DA. 1973; VOL. 7; NO 3; PP. 548-551; BIBL. 5 REF.Serial Issue

UBERBLICK UEBER DIE ARBEITEN DER STANDARDISIERUNG VON HALBLEITER-BAUELEMENTEN IM RAHMEN DES RGW = VUE D'ENSEMBLE DES TRAVAUX DE STANDARDISATION DE DISPOSITIFS A SEMI-CONDUCTEURS DANS LE CADRE DU CONSEIL D'ENTRAIDE ECONOMIQUEKLITZKE J.1973; NACH.-TECH., ELEKTRON.; DTSCH.; DA. 1973; VOL. 23; NO 5; PP. 185-186; (2. WISS. KONF. INGENIEURHOCHSCH. MITTWEIDA. EINSATZ PROZESSMESSTECH. QUALITAETSSICHERUNG ERHOHUNG ZUVERLAESSIGKEIT TECHNOL. PROZESSES; MITTWEIDA; 1973)Conference Paper

THE CHALLENGES FOR ION IMPLANTATION TECHNOLOGYWILSON RG.1972; IN: ELECTRON ION BEAM SCI. TECHNOL. VTH INT. CONF.; PRINCETON; ELECTROCHEM. SOC.; DA. 1972; PP. 217-224Conference Proceedings

ON THE PHYSICS AND MODELING OF SMALL SEMICONDUCTOR DEVICES. IV: GENERALIZED, RETARDED TRANSPORT IN ENSEMBLE MONTE CARLO TECHNIQUESZIMMERMANN J; LUGLI P; FERRY DK et al.1983; SOLID-STATE ELECTRONICS; ISSN 0038-1101; GBR; DA. 1983; VOL. 26; NO 3; PP. 233-239; BIBL. 39 REF.Article

STRUCTURES PERIODIQUES ET LEUR APPLICATION DANS LES DISPOSITIFS OPTOELECTRONIQUES A SEMICONDUCTEURSMALAG A.1978; ROZPR. ELEKTROTECH.; POLSKA; DA. 1978; VOL. 24; NO 1; PP. 191-225; ABS. ANGL. FR. ALLEM. RUSSE; BIBL. 42 REF.Article

DISPOSITIFS A SEMICONDUCTEURS COMPOSESNAMBA S; KAWABE M.1976; J. VACUUM SOC. JAP.; JAP.; DA. 1976; VOL. 19; NO 1; PP. 5-12; BIBL. 25 REF.Article

A NEW SEMICONDUCTOR SWITCHING DEVICE.YAMAMOTO Y.1976; I.E.E.E. TRANS. ELECTRON DEVICES; U.S.A.; DA. 1976; VOL. 23; NO 3; PP. 364-366; BIBL. 4 REF.Article

TOPOLOGICALLY STRUCTURED THIN FILMS IN SEMICONDUCTOR DEVICE OPERATION.NATHANSON HC; GULDBERG J.1975; PHYS. THIN FILMS; U.S.A.; DA. 1975; VOL. 8; PP. 251-333; BIBL. 2 P. 1/2Article

QUE PEUT-ON ATTENDRE DES DISPOSITIFS A SEMICONDUCTEURS ACTUELS.NISHIZAWA J.1975; OYO BUTURI; JAP.; DA. 1975; VOL. 44; NO 9; PP. 1017-1021; BIBL. 13 REF.Article

A COMPUTER SIMULATION SCHEME FOR VARIOUS SOLID-STATE DEVICES.SE PUAN YU; TANTRAPORN W.1975; I.E.E.E. TRANS. ELECTRON DEVICES; U.S.A.; DA. 1975; VOL. 22; NO 8; PP. 515-522; BIBL. 11 REF.Article

ACCELERATION FACTORS FOR PLASTIC ENCAPSULATED SEMICONDUCTOR DEVICES AND THEIR RELATIONSHIP TO FIELD PERFORMANCE.REICH B.1975; MICROELECTRON. AND RELIABIL.; G.B.; DA. 1975; VOL. 14; NO 1; PP. 63-66; BIBL. 13 REF.Article

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