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LOW/HIGH-PROFILE TRAPATT STRUCTURE.GORONKIN H.1974; ELECTRON. LETTERS; G.B.; DA. 1974; VOL. 10; NO 19; PP. 400-402; BIBL. 6 REF.Article

FUNDAMENTAL LIMITATIONS OF THE CONTROLLED AVALANCHE TRANSIT TIME TRANSISTOR (CATT)CROSNIER Y; GERARD H; LEFEBVRE M et al.1981; SOLID-STATE ELECTRON.; ISSN 0038-1101; GBR; DA. 1981; VOL. 24; NO 8; PP. 731-737; BIBL. 10 REF.Article

AMPLIFICATION DES ONDES ELECTROMAGNETIQUES DANS UNE DIODE DE TRANSIT A AVALANCHE DISTRIBUEEKORNAUKHOV AV; SHABANOV VN.1976; IZVEST. VYSSH. UCHEBN. ZAVED., RADIOELEKTRON.; S.S.S.R.; DA. 1976; VOL. 19; NO 3; PP. 29-33; BIBL. 9 REF.Article

A TECHNIQUE FOR FABRICATING OXIDE PASSIVATED BARITT DIODES.ARMSTRONG BM; MOORE RA; GAMBLE HS et al.1977; J. ELECTROCHEM. SOC.; U.S.A.; DA. 1977; VOL. 124; NO 9; PP. 1462-1463; BIBL. 3 REF.Article

INVESTIGATIONS OF THE FABRICATION OF THIN SILICON FILMS FOR MICROWAVE SEMICONDUCTOR TRANSIT TIME DEVICES.FREYER J.1975; J. ELECTROCHEM. SOC.; U.S.A.; DA. 1975; VOL. 122; NO 9; PP. 1238-1240; BIBL. 8 REF.Article

LOW-VOLTAGE PUNCHTHROUGH INJECTION STRUCTURE.DELAGEBEAUDEUF D.1974; ELECTRON. LETTERS; G.B.; DA. 1974; VOL. 10; NO 10; PP. 166-167Article

COMPUTER SIMULATION OF INSTABILITY AND NOISE IN HIGH-POWER AVALANCHE DEVICESGIBLIN RA; SCHERER EF; WIERICH RL et al.1973; I.E.E.E. TRANS. ELECTRON. DEVICES; U.S.A.; DA. 1973; VOL. 20; NO 4; PP. 404-418; BIBL. 28 REF.Serial Issue

AN S-BAND CATT.YU SP; CADY WR; TANTRAPORN W et al.sdIN: ACT. SEMICOND. DEV. MICROWAVES INTEGRATED OPT. BIENN. CORNELL ELECTR. ENG. CONF. 5. PROC.; ITHACA, N.Y.; 1975; S.L.; DA. S.D.; PP. 333-342; BIBL. 6 REF.Conference Paper

SIMPLE TRAPATT CIRCUIT FOR 2 ND-HARMONIC EXTRACTION.CORBEY CD.1975; ELECTRON. LETTERS; G.B.; DA. 1975; VOL. 11; NO 13; PP. 283-284; BIBL. 7 REF.Article

SUR QUELQUES PARTICULARITES DES OSCILLATIONS DE TRANSIT A AVALANCHE DANS LES DIODES P+-N-N+ HAUTE TENSION AU SILICIUMGREKHOV IV; KARASEV AS; KIREEV OA et al.1976; RADIOTEKH. I ELEKTRON.; S.S.S.R.; DA. 1976; VOL. 21; NO 3; PP. 652-655; BIBL. 5 REF.Article

TRANSIT-TIME-INDUCED MICROWAVE NEGATIVE RESISTANCE IN GA1-XALXAS-GAAS HETEROSTRUCTURE DIODES.SITCH JE; MAJERFELD A; ROBSON PN et al.1975; ELECTRON. LETTERS; G.B.; DA. 1975; VOL. 11; NO 19; PP. 457-458; BIBL. 8 REF.Article

SI P+PNN+ TRAPATT DIODE.OKANO S; KURODA M; ITOH M et al.1977; TOSHIBA REV., INTERNATION. ED.; JAP.; DA. 1977; NO 110; PP. 35-38; BIBL. 2 REF.Article

ETUDE ET REALISATION DE DISPOSITIFS HYPERFREQUENCES A TEMPS DE TRANSIT ET INJECTION PAR EFFET TRANSISTOR.ARMAND M; SALMER G; CROSNIER Y et al.1976; DGRST-7570685; FR.; DA. 1976; PP. (54P.); H.T. 28; BIBL. 11 REF.; (RAPP. FINAL, ACTION CONCERTEE: COMPOSANTS CIRCUITS MICROMINIATURISES)Report

APPLICATION OF TRANSIT-TIME EFFECTS FOR GENERATION OF MICROWAVE AND OPTICAL SIGNALSKUCERA L; KORTAN J.1973; ACTA TECH. C.S.A.V.; CESKOSL.; DA. 1973; VOL. 18; NO 2; PP. 111-127; BIBL. 15 REF.Serial Issue

ANALYTIC THEORY FOR SILICON DOUBLE-SIDED N+-N-P-P+ TRAPATT-DIODE STRUCTURESCOTTAM MG.1973; ELECTRON. LETTERS; G.B.; DA. 1973; VOL. 9; NO 16; PP. 353-354; BIBL. 7 REF.Serial Issue

DERIVATION OF THE LARGE SIGNAL AVALANCHE DIODE MODEL.KARASEK M.1978; ACTA TECH. C.S.A.V.; CESKOSL.; DA. 1978; VOL. 23; NO 1; PP. 11-22; BIBL. 10 REF.Article

HIGH-POWER PT SCHOTTKY BARITT DIODES.AHMAD S; FREYER J.1976; ELECTRON. LETTERS; G.B.; DA. 1976; VOL. 12; NO 10; PP. 238-239; BIBL. 6 REF.Article

TRANSISTOR TRANSIT-TIME OSCILLATOR (TRANSLATOR).WRIGHT GT.1976; ELECTRON. LETTERS; G.B.; DA. 1976; VOL. 12; NO 2; PP. 37-38; BIBL. 5 REF.Article

NOISE IN MICROWAVE, INJECTION, TRANSIT TIME AND TRANSFERRED-ELECTRON DEVICES.CONSTANT E.1976; PHYS. B+C; PAYS-BAS; DA. 1976; VOL. 83; NO 1; PP. 24-40; BIBL. 31 REF.; (PHYS. ASPECTS NOISE SOLID STATE DEVICE. INT. CONF. 4. PROC.; NOORDWIJKERHOUT; 1975)Conference Paper

ETUDE EXPERIMENTALE DU TRANSISTOR A AVALANCHE CONTROLEE ET TEMPS DE TRANSIT - C.A.T.T. - MISE EN EVIDENCE DES MECANISMES FONDAMENTAUXGERARD HENRI.1979; ; FRA; DA. 1979; (7)-84 P.-PL.; 30 CM; BIBL. 14 REF.; TH. 3E CYCLE: SCI./LILLE 1/1979Thesis

THE INFLUENCE OF ETCH PROCEDURE ON THE STABILITY OF TRANSIT-TIME DEVICES.DE COGAN D.1976; J. ELECTROCHEM. SOC.; U.S.A.; DA. 1976; VOL. 123; NO 12; PP. 1918-1919; BIBL. 1 REF.Article

EFFECT OF CHROMIUM THICKNESS ON AUCR-NSI SCHOTTKY AND AUCR-N-P+SI BARITT DIODES. = EFFET DE L'EPAISSEUR DE CHROME SUR DES DIODES DE SCHOTTKY A AUCR-NSI ET BARITT A AUCR-N-P+SINARAIN J; BORREGO JM; GUTMANN RJ et al.1975; ELECTRON. LETTERS; G.B.; DA. 1975; VOL. 11; NO 8; PP. 178-179; BIBL. 4 REF.Article

TRANSIT-TIME NEGATIVE RESISTANCE IN BULK SI STRUCTURES SUBJECTED TO AVALANCHE INJECTION.SPIRITO P; VITALE G.1975; I.E.E.E. TRANS. ELECTRON DEVICES; U.S.A.; DA. 1975; VOL. 22; NO 12; PP. 1087-1091; BIBL. 8 REF.Article

ION-IMPLANTED PLANAR-MESA IMPATT DIODES FOR MILLIMETER WAVELENGTHSLEE DH; WELLER KP; THROWER WF et al.1978; I.E.E.E. TRANS. ELECTRON DEVICES; USA; DA. 1978; VOL. 25; NO 6; PP. 714-722; BIBL. 16 REF.Article

ANALYSE THERMODYNAMIQUE DU RENDEMENT DES GENERATEURS SEMICONDUCTEURSROJZIN NM.1978; IZVEST. VYSSH. UCHEBN. ZAVED., RADIOELEKTRON.; UKR; DA. 1978; VOL. 21; NO 12; PP. 65-72; BIBL. 4 REF.Article

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