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GALLIUM ARSENIDE TRANSFERRED-ELECTRON DEVICES BY LOW-LEVEL ION IMPLANTATIONANDERSON WT JR; DIETRICH HB; SWIGGARD EW et al.1980; J. APPL. PHYS.; ISSN 0021-8979; USA; DA. 1980; VOL. 51; NO 6; PP. 3175-3177; BIBL. 10 REF.Article

QUASIENHANCEMENT-MODE OPERATION OF TRANSFERRED-ELECTRON LOGIC DEVICES (T.E.L.D.S.).UPADHYAYULA LC.1976; ELECTRON. LETTERS; G.B.; DA. 1976; VOL. 12; NO 10; PP. 262-263; BIBL. 6 REF.Article

COMMUTATEURS BI-STABLES A EFFET GUNNBRCHE MA; KOZLOV AT; KRAVCHENKO LN et al.1980; RADIOTEKH. I ELEKTRON.; SUN; DA. 1980; VOL. 25; NO 4; PP. 836-842; BIBL. 18 REF.Article

EQUIVALENT CIRCUIT OF GUNN DEVICES OPERATING IN THE MONOSTABLE SWITCHING MODECLAASSEN M; REINECKER E.1981; IEEE TRANS. ELECTRON DEVICES; ISSN 0018-9383; USA; DA. 1981; VOL. 28; NO 3; PP. 280-284; BIBL. 23 REF.Article

DEPENDENCE OF T.E.O. EFFICIENCY ON NL PRODUCT.IP KT; EASTMAN LF.1975; ELECTRON. LETTERS; G.B.; DA. 1975; VOL. 11; NO 14; PP. 301-303; BIBL. 7 REF.Article

INP MICROWAVE OSCILLATORS WITH 2-ZONE CATHODES.GRAY KW; PATTISON JE; REES HD et al.1975; ELECTRON. LETTERS; G.B.; DA. 1975; VOL. 11; NO 17; PP. 402-403; BIBL. 4 REF.Article

INTERNAL DYNAMICS AND MICROWAVE PROPERTIES OF X-BAND TRANSFERRED ELECTRON DEVICES.KIEHL RA; GUNSHOR RL.1976; I.E.E.E. TRANS. MICROWAVE THEORY TECH.; U.S.A.; DA. 1976; VOL. 24; NO 4; PP. 165-172; BIBL. 20 REF.Article

SCHOTTKY-CONTACT COUPLING BETWEEN SCHOTTKY-ELECTRODE-TRIGGERED GUNN ELEMENTSHASHIZUME N; KATAOKA S.1979; I.E.E.E. TRANS. ELECTRON DEVICES; USA; DA. 1979; VOL. 26; NO 7; PP. 1019-1026; BIBL. 9 REF.Article

A THEORETICAL AND EXPERIMENTAL STUDY OF QUEUCHED DOMAIN OSCILLATIONS IN A TRANSFERRED ELECTRON DEVICE.MEHARRY DE.1976; ACTA POLYTECH. SCAND., ELECTR. ENGNG; SUEDE; DA. 1976; NO 38; PP. 1-64; BIBL. 1 P. 1/2; ISBN 9516660681Serial Issue

BIAS-TUNING AND MODULATION CHARACTERISTICS OF TRANSFERRED-ELECTRON OSCILLATORS.TANG DD; LOMAX RJ.1975; I.E.E.E. TRANS. MICROWAVE THEORY TECH.; U.S.A.; DA. 1975; VOL. 23; NO 9; PP. 748-753; BIBL. 16 REF.Article

TRANSFERRED-ELECTRON OSCILLATION IN N-IN0.53 GA0.47 ASTAKEDA Y; SHIKAGAWA N; SASAKI A et al.1980; SOLID-STATE ELECTRON.; ISSN 0038-1101; GBR; DA. 1980; VOL. 23; NO 9; PP. 1003-1005; BIBL. 12 REF.Article

K-BAND TRANSFERED ELECTRON OSCILLATOR.RAJU G; CALLA OPN.1976; J. INSTIT. ELECTRON. TELECOMMUNIC. ENGRS; INDIA; DA. 1976; VOL. 22; NO 2; PP. 94; BIBL. 1 REF.Article

HIGH EFFICIENCY AND HIGH POWER GUNN DIODES.TANAKA S.1975; JAP. J. APPL. PHYS.; JAP.; DA. 1975; VOL. 14; NO 1; PP. 76-81; BIBL. 8 REF.Article

TEMPERATURE COMPENSATION OF GUNN OSCILLATORS. = COMPENSATION EN TEMPERATURE DES OSCILLATEURS DE GUNNSTEVENS R; MYERS FA.1974; ELECTRON. LETTERS; G.B.; DA. 1974; VOL. 10; NO 22; PP. 463-464; BIBL. 1 REF.Article

OVERLENGTH-MODE TRANSFERRED-ELECTRON HARMONIC GENERATORSMAZZONE AM; REES HD.1979; ELECTRON. LETTERS; GBR; DA. 1979; VOL. 15; NO 25; PP. 813-814; BIBL. 5 REF.Article

ERFAHRUNGEN MIT EINEM EINDIMENSIONALEN, SIMULTANEN IMPLIZIERTEN HALBLEITER-ANALYSEALGORITHMUS ZUR UNTERSUCHUNG VON GUNN-BAUELEMENTEN = L'ETUDE DE COMPOSANTS DE GUNN AU MOYEN D'UN ALGORITHME D'ANALYSE UNIDIMENSIONNEL, SIMULTANE ET IMPLICITE POUR SEMI-CONDUCTEURSCHUEFFNY R; GOETZE R.1979; NACHR.-TECH., ELEKTRON.; DDR; DA. 1979; VOL. 29; NO 3; PP. 100-106; BIBL. 24 REF.Article

SWITCHING IN MINIATURIZED PLANAR GUNN DEVICES.SCHLACHETZKI A.1977; PHYS. STATUS SOLIDI, A; ALLEM.; DA. 1977; VOL. 41; NO 1; PP. 103-111; ABS. ALLEM.; BIBL. 24 REF.Article

OPTIMUM DESIGN OF N+-N-N+ INP DEVICES IN THE MILLIMETER-RANGE FREQUENCY LIMITATION-RF PERFORMANCESFRISCOURT MR; ROLLAND PA.1983; ELECTRON DEVICE LETTERS; ISSN 0193-8576; USA; DA. 1983; VOL. 4; NO 5; PP. 135-137; BIBL. 8 REF.Article

ETUDE THEORIQUE DES GENERATEURS A DIODES A TRANSFERT ELECTRONIQUE INTER-VALLEESPORESH SB; TAGER AS.1978; RADIOTEKH. I ELEKTRON.; S.S.S.R.; DA. 1978; VOL. 23; NO 4; PP. 834-840; BIBL. 13 REF.Article

PLANAR GUNN DEVICES WITH CATHODE TIP.KURUMADA K; MAUSE K.1976; NACHR.-TECH. Z.; DTSCH.; DA. 1976; VOL. 29; NO 7; PP. 547-548; ABS. ALLEM.; BIBL. 7 REF.Article

A QUASI-STEADY-STATE PHENOMENOLOGICAL MODEL FOR A TRANSFERRED-ELECTRON OSCILLATOR.JACKSON JR; RHODES JD.1976; INTERNATION. J. CIRCUIT THEORY APPL.; G.B.; DA. 1976; VOL. 4; NO 2; PP. 185-190; BIBL. 6 REF.Article

A TRANSFERRED-ELECTRON FREQUENCY MEMORIZER.CURTICE WR.1975; I.E.E.E. TRANS. MICROWAVE THEORY TECH.; U.S.A.; DA. 1975; VOL. 23; NO 12; PP. 1074-1076; BIBL. 2 REF.Article

MM-WAVE INP GUNN DEVICES: STATUS AND TRENDSWANDINGER L.1981; MICROWAVE J.; ISSN 0026-2897; USA; DA. 1981; VOL. 24; NO 3; PP. 71-78; 5 P.; BIBL. 18 REF.Article

P-TYPE ANODE STRUCTURE FOR GAAS TEDS ON SEMI-INSULATING SUBSTRATEKURUMADA K; ASAI K; ISHII Y et al.1980; I.E.E.E. ELECTRON DEVICE LETT.; USA; DA. 1980; VOL. 1; NO 9; PP. 167-169; BIBL. 12 REF.Article

GUNN-EFFECT INHIBITOR AND ITS APPLICATION TO HIGH-SPEED CARRY FINDING DEVICEHASHIZUME N; KATAOKA S.1979; I.E.E.E. TRANS. ELECTRON. DEVICES; USA; DA. 1979; VOL. 26; NO 3; PP. 183-190; BIBL. 24 REF.Article

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