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CONSTRUCTION OF HIGHLY ASYMMETRIC ION IMPLANTATION PROFILES BY PEARSON IV DISTRIBUTIONBURENKOV AF; KOMAROV FF; TEMKIN MM et al.1982; RADIAT. EFF.; ISSN 0033-7579; GBR; DA. 1982; VOL. 66; NO 1-2; PP. 115-118; BIBL. 12 REF.Article

General expressions for the impurity distributions of B and P implanted in SiO2STOLMEIJER, A; SNELS, W. C. E; BOUDEWIJN, P. R et al.Journal of the Electrochemical Society. 1988, Vol 135, Num 9, pp 2309-2311, issn 0013-4651Article

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