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HIGH PRESSURE INVESTIGATION OF FERROELECTRIC PHASE TRANSITION IN PBSNTESUSKI T; DMOWSKI L; BAJ M et al.1981; SOLID STATE COMMUN.; ISSN 0038-1098; USA; DA. 1981; VOL. 38; NO 1; PP. 59-62; BIBL. 27 REF.Article

Magnetotransport in 2D semiconductor systems under pressureDMOWSKI, L; PORTAL, J. C.Semiconductor science and technology. 1989, Vol 4, Num 4, pp 211-217, issn 0268-1242, 7 p.Conference Paper

A NEW EXPLANATION OF THE CL DONOR DEIONIZATION AND ITS KINETICS OBSERVED IN CDTE: CL UNDER HYDROSTATIC PRESSURE.BAJ M; DMOWSKI L; KONCZYKOWSKI M et al.1976; PHYS. STATUS SOLIDI, A; ALLEM.; DA. 1976; VOL. 33; NO 1; PP. 421-426; ABS. ALLEM.; BIBL. 7 REF.Article

Direct proof of two-electron occupation of Ge-DX centers in GaAs codoped with Ge and TeBAJ, M; DMOWSKI, L. H; SŁUPINSKI, T et al.Physical review letters. 1993, Vol 71, Num 21, pp 3529-3532, issn 0031-9007Article

The variation of the pressure coefficient of manganin sensors at low temperaturesDMOWSKI, L. H; LITWIN-STASZEWSKA, E.Measurement science & technology (Print). 1999, Vol 10, Num 5, pp 343-347, issn 0957-0233Article

Intraconduction band magneto-optical study of InSb under hydrostatic pressure = Magnetooptische Untersuchung innerhalb des Leitungsbandes von InSb unter hydrostatischem DruckHUANT, S; DMOWSKI, L; BAJ, M et al.Physica status solidi. B. Basic research. 1984, Vol 125, Num 1, pp 215-219, issn 0370-1972Article

Metastable resonant localized electron state in GaAs doped with Ga2O3DMOWSKI, L; KONCZEWICZ, L; LITWIN-STASZEWSKA, E et al.Acta physica Polonica. A. 1988, Vol 73, Num 2, pp 223-226, issn 0587-4246Article

Pressure dependence of the electronic effective mass and effective g-factor in the narrow gap semiconductor InSbHUANT, S; DMOWSKI, L; BAJ, M et al.Physica status solidi. B. Basic research. 1986, Vol 135, Num 2, pp K129-K132, issn 0370-1972Article

Novel trap state at the grain boundary: metastable character of defects in p-HgMnTe and p-HgCdMnTe bicrystalsSUSKI, T; WISNIEWSKI, P; DMOWSKI, L et al.Journal of applied physics. 1989, Vol 65, Num 3, pp 1203-1207, issn 0021-8979Article

Intraconduction band magneto-optical study of InSb under hydrostatic pressureHUANT, S; DMOWSKI, L; BAJ, M et al.Physica status solidi. B. Basic research. 1984, Vol 125, Num 1, pp 215-219, issn 0370-1972Article

Structural and magnetic phase transitions in CoxNi1-xMnGe system under pressureNIZIOL, S; ZIEBA, A; ZACH, R et al.Journal of magnetism and magnetic materials. 1983, Vol 38, Num 2, pp 205-213, issn 0304-8853Article

Direct evidence of the two-electron character of DX centers based on co-doping with shallow donors and application of high pressureBAJ, M; DMOWSKI, L. H.The Journal of physics and chemistry of solids. 1995, Vol 56, Num 3-4, pp 589-593, issn 0022-3697Conference Paper

Deformation potential in a high-electron-mobility GaAs/Ga0.7Al0.3As heterostructure : hydrostatic-pressure studiesGORCZYCA, I; SUSKI, T; LITWIN-STASZEWSKA, E et al.Physical review. B, Condensed matter. 1992, Vol 46, Num 7, pp 4328-4331, issn 0163-1829Article

Study of Γ, L, and X donor states in Si-doped AlGaAs by pressure dependent Hall measurementsGOUTIERS, B; DMOWSKI, L; RANZ, E et al.Applied physics letters. 1991, Vol 59, Num 14, pp 1740-1742, issn 0003-6951Article

High pressure and DX centers in heavily doped bulk GaAsSUSKI, T; PIOTRZKOWSKI, R; WISNIEWSKI, P et al.Physical review. B, Condensed matter. 1989, Vol 40, Num 6, pp 4012-4021, issn 0163-1829, 10 p.Article

First observation of two-dimensional hole gas in a Ga0.47In0.53As/InP heterojunction grown by metalorganic vapor depositionRAZEGHI, M; MAUREL, P; TARDELLA, A et al.Journal of applied physics. 1986, Vol 60, Num 7, pp 2453-2456, issn 0021-8979Article

New impurity related transitions in n-InSbHUANT, S; BRUNEL, L. C; BAJ, M et al.Solid state communications. 1985, Vol 54, Num 2, pp 131-133, issn 0038-1098Article

Model of the metastable center in indium antimonide: comment on pressure-dependent compensation in InSbPIOTRZKOWSKI, R; DMOWSKI, L; BAJ, M et al.Physical review. B, Condensed matter. 1985, Vol 32, Num 4, pp 2649-2652, issn 0163-1829Article

Parallel conduction in p-type gallium nitride homo-structuresLITWIN-STASZEWSKA, E; KONCZEWICZ, L; PIOTRZKOWSKI, R et al.Semiconductor science and technology. 2008, Vol 23, Num 9, issn 0268-1242, 095007.1-095007.5Article

Two-dimensional electron gas at a Ga0.47In0.53As/(AlxGa1-x)0.48In0.52As interfaceBEN AMOR, S; DMOWSKI, L; PORTAL, J. C et al.Applied physics letters. 1988, Vol 53, Num 6, pp 479-481, issn 0003-6951Article

Metastable character of grain-boundary defects in p-Hg1-xMnxTe and Hg1-x-yCdyMnxTeWISNIEWSKI, P; SUSKI, T; SKIERBISZEWSKI, C et al.Acta physica Polonica. A. 1988, Vol 73, Num 3, pp 443-446, issn 0587-4246Article

Persistent photoconductivity study in very pure InP epilayersGAUTHIER, D; GOUTIERS, B; PORTAL, J. C et al.Semiconductor science and technology. 1989, Vol 4, Num 4, pp 220-222, issn 0268-1242, 3 p.Conference Paper

First observation of the two-dimensional properties of the electron gas in Ga0.49In0.51P/GaAs heterojunctions grown by low pressure metalorganic chemical vapor depositionRAZEGHI, M; MAUREL, P; OMNES, F et al.Applied physics letters. 1986, Vol 48, Num 19, pp 1267-1269, issn 0003-6951Article

Quantum and classical lifetimes in a Ga0.49In0.51P/GaAs heterojunctionBEN AMOR, S; DMOWSKI, L; PORTAL, J. C et al.Applied physics letters. 1990, Vol 57, Num 27, pp 2925-2927, issn 0003-6951, 3 p.Article

First observation of the quantum Hall effect in a Ga0.47In0.53As-InP heterostructure with three electric subbandsRAZEGHI, M; DUCHEMIN, J. P; PORTAL, J. C et al.Applied physics letters. 1986, Vol 48, Num 11, pp 712-714, issn 0003-6951Article

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