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INSTABILITE DE COURANT DANS ALPHA -SICCHIGVINADZE GD.1975; SOOBSHCH. AKAD. NAUK GRUZ. S.S.R.; S.S.S.R.; DA. 1975; VOL. 78; NO 3; PP. 589-591; ABS. GEORGIEN ANGL.; BIBL. 6 REF.Article

VITESSE D'UN DOMAINE DANS LES CONDITIONS DE MULTIPLICATION DU COURANTAVAK'YANTS GM; ARUTYUNYAN VM.1975; IZVEST. AKAD. NAUK ARM. S.S.R., FIZ.; S.S.S.R.; DA. 1975; VOL. 10; NO 3; PP. 189-195; ABS. ARM. ANGL.; BIBL. 15 REF.Article

IONISATION PAR CHOC DANS LES DIODES DE GUNN. FORME DU DOMAINE ET CARACTERE DE SON MOUVEMENTSUDZILOVSKIJ V YU.1973; FIZ. TEKH. POLUPROVODN.; S.S.S.R.; DA. 1973; VOL. 7; NO 3; PP. 563-571; BIBL. 10 REF.Serial Issue

ON THE THEORY OF TRANSVERSE EXTENSION OF GUNN DOMAINS.SHARMA SK; SACHDE SC; ASHWINI K et al.1975; INDIAN J. PURE APPL. PHYS.; INDIA; DA. 1975; VOL. 13; NO 4; PP. 209-213; BIBL. 9 REF.Article

RECOMBINATION DOMAIN INSTABILITY IN HIGH ENERGY ELECTRON IRRADIATED GERMANIUMWADA T; FUKUOKA Y; ARIZUMI T et al.1972; JAP. J. APPL. PHYS.; JAP.; DA. 1972; VOL. 11; NO 7; PP. 1009-1015; BIBL. 28 REF.Serial Issue

NEGATIVE RESISTANCE DOMAINS MOVING AT SONIC SPEEDS IN PIEZOELECTRIC SEMICONDUCTORS.RIDLEY BK.1974; J. PHYS. D; G.B.; DA. 1974; VOL. 7; NO 11; PP. 1555-1559; BIBL. 16 REF.Article

SLOW HIGH-FIELD DOMAINS IN GUNN DIODES WITH TWO KINDS OF CARRIERS.GELMONT BL; SHUR MS.1974; J. PHYS. D; G.B.; DA. 1974; VOL. 7; NO 9; PP. 1279-1286; BIBL. 5 REF.Article

DOMAIN WIDTH IN A DIELECTRICALLY LOADED GUNN DIODE.LEE RE.1975; ELECTRON. LETTERS; G.B.; DA. 1975; VOL. 11; NO 24; PP. 569-570; BIBL. 8 REF.Article

EN RUSSE. = THEORIE NON LINEAIRE DES DOMAINES ELECTROTHERMIQUESZUEV VV.1975; FIZ. TEKH. POLUPROVODN.; S.S.S.R.; DA. 1975; VOL. 9; NO 6; PP. 1092-1097; BIBL. 6 REF.Article

ELECTRODE (P)BAR.INF.OLARIZATION( )BAR.INF.IN ALKALI-CONTAINING GLASSESCARLSON DE; HANG KW; STOCKDALE GF et al.1972; J. AMER. CERAM. SOC.; U.S.A.; DA. 1972; VOL. 55; NO 7; PP. 337-341; BIBL. 26 REF.Serial Issue

SLOW GUNN DOMAINS IN COMPENSATED SEMICONDUCTORS.GELMONT BL; KAZARINOV RF; SHUR MS et al.1975; J. PHYS. D; G.B.; DA. 1975; VOL. 8; NO 5; PP. 530-534; BIBL. 12 REF.Article

CONDITIONS DE GERMINATION DE DOMAINES DE CHAMP INTENSE MOBILES DANS LES DIODES DE GUNN EN TENANT COMPTE DES IMPERFECTIONS ET HETEROGENEITES AUX CONTACTSBROVKIN YU N; SHABALINA RG; KOSTYLEV SA et al.1975; FIZ. TEKH. POLUPROVODN.; S.S.S.R.; DA. 1975; VOL. 9; NO 4; PP. 697-701; BIBL. 12 REF.Article

SOME MEASUREMENTS OF THE TRANSIENT BEHAVIOUR OF HIGH FIELD DOMAINS IN INP.PREW BA.1974; SOLID-STATE ELECTRON.; G.B.; DA. 1974; VOL. 17; NO 7; PP. 725-728; BIBL. 14 REF.Article

CRITERES DE STABILITE DES DOMAINES DE DIPOLES DANS LES DIODES GUNNBROVKIN YU N; KOSTYLEV SA.1972; IZVEST. VYSSH. UCHEBN. ZAVED., RADIOELEKTRON.; S.S.S.R.; DA. 1972; VOL. 15; NO 11; PP. 1307-1311; BIBL. 6 REF.Serial Issue

DOMAINES ELECTROTHERMIQUES DU SILICIUM NBYKOVSKIJ YU A; ZUEV VV; KIRYUKHIN AD et al.1975; FIZ. TEKH. POLUPROVODN.; S.S.S.R.; DA. 1975; VOL. 9; NO 9; PP. 1766-1771; BIBL. 9 REF.Article

INSTABILITE INTERNE DANS LES SEMICONDUCTEURS A PIEGES PROFONDSGASANOV EH R.1974; IZVEST. AKAD. NAUK AZERBAJDZH. S.S.R., FIZ.-TEKH. MAT. NAUK; S.S.S.R.; DA. 1974; NO 4; PP. 128-134; ABS. AZERB. ANGL.; BIBL. 5 REF.Article

REPLY TO COMMENT ON DETERMINATION OF THE VELOCITY*FIELD CHARACTERISTIC FOR N-TYPE INDIUM PHOSPHIDE FROM DIPOLE-DOMAIN MEASUREMENTSPREW BA.1973; ELECTRON. LETTERS; G.B.; DA. 1973; VOL. 9; NO 10; PP. 236-238; BIBL. 11 REF.Serial Issue

ETUDE DE L'INSTABILITE DE DOMAINES DANS LES MELANGES DES GAZ NOBLES AVEC DES GAZ MOLECULAIRESPETRUSHEVICH YU V; STAROSTIN AN.1981; FIZ. PLAZMY; ISSN 0367-2921; SUN; DA. 1981; VOL. 7; NO 4; PP. 842-851; BIBL. 20 REF.Article

EFFET HALL ANORMAL DANS UN SEMICONDUCTEUR A PLUSIEURS VALLEES EN REGIME D'EFFET SASAKI A PLUSIEURS DETERMINATIONSGRIBNIKOV ZS; MITIN VV.1975; FIZ. TEKH. POLUPROVODN.; S.S.S.R.; DA. 1975; VOL. 9; NO 2; PP. 276-281; BIBL. 8 REF.Article

EXISTENCE DE MULTIPLES DOMAINES DE CHAMP INTENSE DANS GAAS N EN L'ETAT DE RESISTANCE ABSOLUE NEGATIVEMATULENIS A; PARSHELYUNAS I; REKLAJTIS A et al.1974; LITOV. FIZ. SBOR.; S.S.S.R.; DA. 1974; VOL. 14; NO 1; PP. 107-115; ABS. LITU. ANGL.; BIBL. 9 REF.Article

DETERMINATION OF THE VELOCITY/FIELD CHARACTERISTIC FOR N TYPE INDIUM PHOSPHIDE FROM DIPOLE-DOMAIN MEASUREMENTSPREW BA.1972; ELECTRON. LETTERS; G.B.; DA. 1972; VOL. 8; NO 24; PP. 592-594; BIBL. 14 REF.Serial Issue

GUNN EFFECT THRESHOLD AND DOMAIN FORMATION IN TRANSVERSE MAGNETIC FIELDS IN INDIUM ANTIMONIDEHEINRICH H; KEELER W.1972; APPL. PHYS. LETTERS; U.S.A.; DA. 1972; VOL. 21; NO 4; PP. 171-172; BIBL. 10 REF.Serial Issue

OSCILLATION AND PHOTORESPONSE OF HIGH-RESISTIVITY N-GAAS DIODESTORRENS AB; YOUNG L.1972; CANAD. J. PHYS.; CANADA; DA. 1972; VOL. 50; NO 11; PP. 1098-1105; ABS. FR.; BIBL. 37 REF.Serial Issue

STATIC NEGATIVE RESISTANCE DUE TO THE GEOMETRICAL EFFECT OF A GAAS AS BULK ELEMENTTATENO H; KATAOKA S.1972; PROC. I.E.E.E.; U.S.A.; DA. 1972; VOL. 60; NO 7; PP. 919-920; BIBL. 7 REF.Serial Issue

TWO-DIMENSIONAL OBSERVATION OF GUNN DOMAINS AT GHZ BY PICOSECOND PULSE STROBOSCOPIC SEM.HOSOKAWA T; FUJIOKA H; URA K et al.1977; APPL. PHYS. LETTERS; U.S.A.; DA. 1977; VOL. 31; NO 5; PP. 340; BIBL. 4 REF.Article

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