au.\*:("DONG DW")
Results 1 to 18 of 18
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DUAL ELECTRON INJECTOR STRUCTUREDIMARIA DS; DONG DW.1980; APPL. PHYS. LETT.; ISSN 0003-6951; USA; DA. 1980; VOL. 37; NO 1; PP. 61-64; BIBL. 5 REF.Article
ELLIPSOMETRY MEASUREMENTS OF POLYCRYSTALLINE SILICON FILMSIRENE EA; DONG DW.1982; J. ELECTROCHEM. SOC.; ISSN 0013-4651; USA; DA. 1982; VOL. 129; NO 6; PP. 1347-1353; BIBL. 9 REF.Article
SILICON OXIDATION STUDIES: THE OXIDATION OF HEAVILY B- AND P-DOPED SINGLE CRYSTAL SILICONIRENE EA; DONG DW.1978; J. ELECTROCHEM. SOC.; USA; DA. 1978; VOL. 125; NO 7; PP. 1146-1151; BIBL. 17 REF.Article
HIGH CURRENT INJECTION INTO SIO2 FROM SI RICH SIO2 FILMS AND EXPERIMENTAL APPLICATIONSDI MARIA DJ; DONG DW.1980; J. APPL. PHYS.; ISSN 0021-8979; USA; DA. 1980; VOL. 51; NO 5; PP. 2722-2735; BIBL. 49 REF.Article
EFFECTS OF AMMONIA ANNEAL ON ELECTRON TRAPPINGS IN SILICON DIOXIDELAI SK; DONG DW; HARTSTEIN A et al.1982; JOURNAL OF THE ELECTROCHEMICAL SOCIETY; ISSN 0013-4651; USA; DA. 1982; VOL. 129; NO 9; PP. 2042-2044; BIBL. 14 REF.Article
RESIDUAL STRESS, CHEMICAL ETCH RATE, REFRACTIVE INDEX, AND DENSITY MEASUREMENTS ON SIO2 FILMS PREPARED USING HIGH PRESSURE OXYGENIRENE EA; DONG DW; ZETO RJ et al.1980; J. ELECTROCHEM. SOC.; ISSN 0013-4651; USA; DA. 1980; VOL. 127; NO 2; PP. 396-399; BIBL. 13 REF.Article
DUL-ELECTRON-INJECTOR-STRUCTURE ELECTRICALLY ALTERABLE READ-ONLY-MEMORY MODELING STUDIESDIMARIA DJ; DEMEYER KM; DONG DW et al.1981; IEEE TRANS. ELECTRON DEVICES; ISSN 0018-9383; USA; DA. 1981; VOL. 28; NO 9; PP. 1047-1053; BIBL. 19 REF.Article
ROOM TEMPERATURE OXIDATION OF LEAD-INDIUM ALLOY FILMSELDRIDGE JM; DONG DW; KOMAREK KL et al.1975; J. ELECTRON. MATER.; U.S.A.; DA. 1975; VOL. 4; NO 6; PP. 1191-1205; BIBL. 19 REF.Article
ELECTRICALLY-ALTERABLE MEMORY USING A DUAL ELECTRON INJECTOR STRUCTUREDIMARIA DJ; DEMEYER KM; DONG DW et al.1980; I.E.E.E. ELECTRON DEVICE LETT.; USA; DA. 1980; VOL. 1; NO 9; PP. 179-181; BIBL. 13 REF.Article
CHARGE TRAPPING STUDIES IN SIO2 USING HIGH CURRENT INJECTION FROM SI-RICH SIO2 FILMSDIMARIA DJ; GHEZ R; DONG DW et al.1980; J. APPL. PHYS.; ISSN 0021-8979; USA; DA. 1980; VOL. 51; NO 9; PP. 4830-4841; BIBL. 30 REF.Article
ANALYSIS OF ULTRATHIN OXIDE GROWTH ON INDIUMELDRIDGE JM; VAN DER MEULEN YJ; DONG DW et al.1972; THIN SOLID FILMS; NETHERL.; DA. 1972; VOL. 12; NO 2; PP. 447-451; BIBL. 9 REF.Serial Issue
OBSERVATION OF AMORPHOUS SILICON REGIONS IN SILICON-RICH SILICON DIOXIDE FILMSHARTSTEIN A; TSANG JC; DIMARIA DJ et al.1980; APPL. PHYS. LETT.; ISSN 0003-6951; USA; DA. 1980; VOL. 36; NO 10; PP. 836-837; BIBL. 12 REF.Article
ATTENUATED TOTAL REFLECTANCE STUDY OF SILICON-RICH SILICON DIOXIDE FILMSHARTSTEIN A; DIMARIA DJ; DONG DW et al.1980; J. APPL. PHYS.; ISSN 0021-8979; USA; DA. 1980; VOL. 51; NO 7; PP. 3860-3862; BIBL. 15 REF.Article
EXTENDED CYCLABILITY IN ELECTRICALLY-ALTERABLE READ-ONLY-MEMORIESDIMARIA DJ; DONG DW; FALCONY C et al.1982; ELECTRON DEVICE LETTERS; ISSN 0193-8576; USA; DA. 1982; VOL. 3; NO 7; PP. 191-195; BIBL. 15 REF.Article
LIGHT EMISSION FROM ELECTRON INJECTOR STRUCTURESTHEIS TN; KIRTLEY JR; DI MARIA DJ et al.1983; PHYSICAL REVIEW LETTERS; ISSN 0031-9007; USA; DA. 1983; VOL. 50; NO 10; PP. 750-754; BIBL. 26 REF.Article
STUDY OF CHARGE TRAPPING AS A DEGRADATION MECHANISM IN ELECTRICALLY ALTERABLE READ-ONLY-MEMORIESFALCONY C; DIMARIA DJ; DONG DW et al.1982; J. APPL. PHYS.; ISSN 0021-8979; USA; DA. 1982; VOL. 53; NO 1; PP. 43-47; BIBL. 13 REF.Article
ELECTRICALLY-ALTERABLE READ-ONLY-MEMORY USING SI-RICH SIO2 INJECTORS AND A FLOATING POLYCRYSTALLINE SILICON STORAGE LAYERDIMARIA DJ; DEMEYER KM; SERRANO CM et al.1981; J. APPL. PHYS.; ISSN 0021-8979; USA; DA. 1981; VOL. 52; NO 7; PP. 4825-4842; BIBL. 54 REF.Article
A NEW LOW-VOLTAGE SI-COMPATIBLE ELECTROLUMINESCENT DEVICEROBBINS DJ; FALCONY C; DIMARIA DJ et al.1982; ELECTRON DEVICE LETT.; ISSN 0193-8576; USA; DA. 1982; VOL. 3; NO 6; PP. 148-151; BIBL. 17 REF.Article