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OBSERVATION OF SHALLOW RESIDUAL DONORS IN HIGH PURITY EPITAXIAL GAAS BY MEANS OF PHOTOLUMINESCENCE SPECTROSCOPYALMASSY RJ; REYNOLDS DC; LITTON CW et al.1981; SOLID STATE COMMUN.; ISSN 0038-1098; USA; DA. 1981; VOL. 38; NO 11; PP. 1053-1056; BIBL. 8 REF.Article

THEORY OF DONOR STATES IN GAP: THE ROLE OF THE CAMEL'S BACKCHANG YC; MCGILL TC.1980; SOLID STATE COMMUN.; ISSN 0038-1098; USA; DA. 1980; VOL. 33; NO 10; PP. 1035-1039; BIBL. 19 REF.Article

ETUDE PAR SPECTROMETRIE DE MASSE DES CENTRES DONNEURS DE PROTONS SUR LA SURFACE REELLE DU GERMANIUMPETROV AS; PRUDNIKOV RV; SILAEV EA et al.1980; VEST. MOSKOV. UNIV., 3; SUN; DA. 1980; VOL. 21; NO 3; PP. 61-63; BIBL. 8 REF.Article

DONOR-LEVELS ANALYSIS IN GAALAS DOUBLE HETEROSTRUCTUREBALLAND B; VINCENT G; BOIS D et al.1979; APPL. PHYS. LETTERS; USA; DA. 1979; VOL. 34; NO 1; PP. 108-110; BIBL. 10 REF.Article

EXCITONS BOUND TO IONIZED DONORS IN POLAR SEMICONDUCTORS.GORZKOWSKI W.1977; PHYS. STATUS SOLIDI, B; ALLEM.; DA. 1977; VOL. 79; NO 2; PP. K151-K152; BIBL. 6 REF.Article

CINETIQUE D'UN MECANISME D'EXTINCTION DE LA LUMINESCENCE PAR SAUTSSAKUN VP.1979; FIZ. TVERD. TELA; SUN; DA. 1979; VOL. 21; NO 3; PP. 662-668; BIBL. 12 REF.Article

TRAPPING IN THE PRESENCE OF ANISOTROPIC DIFFUSIONHUBER DL.1982; PHYSICAL REVIEW. B: CONDENSED MATTER; ISSN 0163-1829; USA; DA. 1982; VOL. 26; NO 7; PP. 3937-3938; BIBL. 5 REF.Article

OPTICAL EXCITATION SPECTRA OF SELENIUM-DOPED SILICONSWARTZ JC; LEMMON DH; THOMAS RN et al.1980; SOLID STATE COMMUN.; ISSN 0038-1098; USA; DA. 1980; VOL. 36; NO 4; PP. 331-334; BIBL. 19 REF.Article

INFLUENCE DE LA DEFORMATION PLASTIQUE SUR LES PROPRIETES ELECTRIQUES DES MONOCRISTAUX DE INSB DE TYPE P AUX VITESSES DE DEFORMATION ELEVEESKRASNOV AP; OSIP'YAN YU A.1980; FIZ. TVERD. TELA; ISSN 0367-3294; SUN; DA. 1980; VOL. 22; NO 2; PP. 483-489; BIBL. 6 REF.Article

PROCESSUS DU TRANSPORT ELECTRONIQUE A LA SURFACE DE SIO2MIRONOV SL.1980; Z. FIZ. HIM.; ISSN 0044-4537; SUN; DA. 1980; VOL. 54; NO 5; PP. 1283-1284; BIBL. 4 REF.Article

ADDENDUM TO "VARIATIONAL PRINCIPLE FOR POISSON'S EQUATION FOR AN IMPURITY ION IN A MEDIUM WITH SPATIALLY VARIABLE DIELECTRIC CONSTANT"BROWNSTEIN KR.1980; PHYS. REV. B; ISSN 0163-1829; USA; DA. 1980; VOL. 22; NO 4; PP. 2131; BIBL. 4 REF.Article

HIGH MAGNETIC FIELD STUDIES OF DONOR EXCITATION SPECTRA IN INSBKAPLAN R; COOKE RA; STRADLING RA et al.1978; SOLID STATE COMMUNIC.; GBR; DA. 1978; VOL. 26; NO 11; PP. 741-744; BIBL. 11 REF.Article

ZEEMAN EFFECT OF THE EXCITATION SPECTRUM OF NEUTRAL MAGNESIUM DONORS IN SILICON.HO LT.1977; PHYS. STATUS SOLIDI, B; ALLEM.; DA. 1977; VOL. 81; NO 2; PP. K99-K101; BIBL. 5 REF.Article

NITROGEN AS DOPANT IN SILICON AND GERMANIUM.PAVLOV PV; ZORIN EI; TETELBAUM DI et al.1976; PHYS. STATUS SOLIDI, A; ALLEM.; DA. 1976; VOL. 35; NO 1; PP. 11-36; BIBL. 3 P.Article

PARTICULARITES DU SPECTRE DES PAIRES DE DONNEURS IONISEES DANS GAAS N EPITAXIQUEBERMAN LV; KAL'FA AA.1976; FIZ. TEKH. POLUPROVODN.; S.S.S.R.; DA. 1976; VOL. 10; NO 12; PP. 2251-2255; BIBL. 10 REF.Article

RESERVAL IN THE ORDER OF IMPURITY BINDING ENERGIES WITH ATOMIC ENERGIESSINGH VA; ZUNGER A; LINDEFELT U et al.1983; PHYSICAL REVIEW. B: CONDENSED MATTER; ISSN 0163-1829; USA; DA. 1983; VOL. 27; NO 2; PP. 1420-1423; BIBL. 12 REF.Article

SHALLOW-DEEP INSTABILITIES OF CHALCOGEN DONORS IN SILICONRESCA L.1982; PHYSICAL REVIEW. B: CONDENSED MATTER; ISSN 0163-1829; USA; DA. 1982; VOL. 26; NO 6; PP. 3238-3242; BIBL. 24 REF.Article

POLARON PROPERTIES OF EXCITON COMPLEXESBEDNAREK S; ADAMOWSKI J; SUFFCZYNSKI M et al.1981; J. PHYS., C, SOLID STATE PHYS.; ISSN 0022-3719; GBR; DA. 1981; VOL. 14; NO 30; PP. 4405-4414; BIBL. 16 REF.Article

ON THE SELF-COMPENSATION OF DONORS IN LIQUID PHASE EPITAXIAL GAASPODOR B.1980; ACTA PHYS. ACAD. SCI. HUNG.; ISSN 0001-6705; HUN; DA. 1980; VOL. 48; NO 2-3; PP. 147-152; BIBL. 21 REF.Article

ETATS DE LACUNES DE TE DANS LE SEMICONDUCTEUR PB1-XSNXTE A BANDE ETROITESIZOV FF; ORLETSKIJ VB; RADCHENKO MV et al.1980; FIZ. TEH. POLUPROVODN.; ISSN 0015-3222; SUN; DA. 1980; VOL. 14; NO 11; PP. 2117-2122; BIBL. 16 REF.Article

STRUCTURE FINE DES NIVEAUX DE L'EXCITON LIE ET DES COMPLEXES A PLUSIEURS EXCITONS DANS LE GERMANIUMPIKUS GE; AVERKIEV NS.1980; PIS'MA ZH. EKSPER. TEOR. FIZ.; SUN; DA. 1980; VOL. 32; NO 5; PP. 352-356; BIBL. 6 REF.Article

NOUVEAUX DONNEURS FINS DANS LE SILICIUMSIBIRYAK EA; LIFSHITS TM; VORONKOVA GI et al.1979; PIS'MA ZH. EKSPER. TEOR. FIZ.; SUN; DA. 1979; VOL. 30; NO 11; PP. 695-697; BIBL. 4 REF.Article

ERROR ANALYSIS IN SEMICONDUCTOR IMPURITY ENERGY LEVEL DETERMINATIONSNEVIN JH; HENDERSON HT; SHEN KL et al.1982; MATER. RES. BULL.; ISSN 0025-5408; USA; DA. 1982; VOL. 17; NO 9; PP. 1111-1120; BIBL. 14 REF.Article

HYDROGEN PASSIVATION OF GOLD-RELATED DEEP LEVELS IN SILICONPEARTON SJ; TAVENDALE AJ.1982; PHYSICAL REVIEW. B: CONDENSED MATTER; ISSN 0163-1829; USA; DA. 1982; VOL. 26; NO 12; PP. 7105-7108; BIBL. 19 REF.Article

OXYGEN DIFFUSION AND THERMAL DONOR FORMATION IN SILICONGOESELE U; TAN TY.1982; APPL. PHYS., A SOLIDS SURF.; ISSN 0721-7250; DEU; DA. 1982; VOL. 28; NO 2; PP. 79-92; BIBL. 128 REF.Article

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