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DOTIERUNG VON ZNSIP2 DURCH DIFFUSION. = DOPAGE DE ZNSIP2 PAR DIFFUSIONZIEGLER E; SIEGEL W.1975; KRISTALL U. TECH.; DTSCH.; DA. 1975; VOL. 10; NO 10; PP. 1057-1061; ABS. ANGL.; BIBL. 11 REF.Article

OBTENTION ET ETUDE DE DIAMANTS SEMICONDUCTEURS SYNTHETIQUES A DIFFERENTS TYPES DE CONDUCTIVITEBUTUZOV VP; LAPTEV VA; PRESNOV VA et al.1976; DOKL. AKAD NAUK S.S.S.R.; S.S.S.R.; DA. 1976; VOL. 226; NO 2; PP. 328-330; BIBL. 4 REF.Article

CRISTALLISATION ORIENTEE DU BISMUTH. II. DISTRIBUTION DE L'ARSENIC, DU NICKEL ET DE CERTAINS ELEMENTS PRECIEUXARTYUKHIN PI; MITYAKIN YU L; SHAVINSKIJ BM et al.1979; IZV. SIB. OTD. AKAD. NAUK SSSR, SER. HIM. NAUK; ISSN 0002-3426; SUN; DA. 1979; NO 5; PP. 66-69; ABS. ENG; BIBL. 11 REF.Article

INFLUENCE DES CONDITIONS DE CROISSANCE ET DU NIVEAU DE DOPAGE SUR LE COEFFICIENT DE DISTRIBUTIONGUBENKO A YA.1975; IZVEST. AKAD. NAUK S.S.S.R., NEORG. MATER.; S.S.S.R.; DA. 1975; VOL. 11; NO 5; PP. 789-794; BIBL. 25 REF.Article

ROLE DE CERTAINES MICRO-IMPURETES DANS LA FORMATION DES CENTRES DE LUMINESCENCE DES DIAMANTS SYNTHETIQUESVAKHIDOV SH A; GASONOV EH M; NURULLAEV EH et al.1976; SINTET. ALMAZY, U.S.S.R.; S.S.S.R.; DA. 1976; NO 1; PP. 63-66; BIBL. 3 REF.Article

POLARIZED EMISSION OF DOPED ZNS CRYSTALS.JASZCZYN KOPEC P; BRANDT S.1974; J. LUMINESC.; NETHERL.; DA. 1974; VOL. 9; NO 3; PP. 212-222; BIBL. 14 REF.Article

DOPAGE DES CRISTAUX DE GAP OBTENUS A PARTIR DE GALLIUM FONDUZYKOV AM; OLEJNIKOV YU G; SAMORUKOV BE et al.1974; IZVEST. AKAD. NAUK S.S.S.R., NEORG. MATER.; S.S.S.R.; DA. 1974; VOL. 10; NO 9; PP. 1593-1595; BIBL. 12 REF.Article

RECOIL CONTRIBUTION TO ION-IMPLANTATION ENERGY-DEPOSITION DISTRIBUTIONS.BRICE DK.1975; J. APPL. PHYS.; U.S.A.; DA. 1975; VOL. 46; NO 8; PP. 3385-3394; BIBL. 23 REF.Article

O- CENTRE FORMATION IN YAG CRYSTALS DOPED WITH IRON GROUP IONS.KVAPIL J; KVAPIL J; KVAPIL J; KVAPIL J; PERNER B et al.1975; KRISTALL U. TECH.; DTSCH.; DA. 1975; VOL. 10; NO 5; PP. 529-534; ABS. ALLEM.; BIBL. 33 REF.Article

PHOTOCONDUCTIVITE DU DIPHOSPHURE DE ZINC SOUS EXCITATION PAR LES PULSES D'UN LASER A RUBISLISITSA MP; MOZOL PE; TYCHINA II et al.1974; KVANT. ELEKTRON.; S.S.S.R.; DA. 1974; VOL. 1; NO 9; PP. 2074-2077; BIBL. 3 REF.Article

ELEKTROSTRIKTION DOTIERTER ALKALIHALOGENIDE. = ELECTROSTRICTION DES HALOGENURES ALCALINS DOPESBURKARD H; KANZIG W; ROSSINELLI M et al.1976; HELV. PHYS. ACTA; SUISSE; DA. 1976; VOL. 49; NO 1; PP. 13-43; ABS. ANGL.; BIBL. 40 REF.Article

DOPANT SEGREGATION IN SILICON BY PULSED-LASER ANNEALING: A TEST CASE FOR THE CONCEPT OF THERMAL MELTINGHOONHOUT D; SARIS FW.1979; PHYS. LETT. SECT. A; ISSN 0375-9601; NLD; DA. 1979; VOL. 74; NO 3-4; PP. 253-255; BIBL. 9 REF.Article

MECANISME ET CINETIQUE DE DIFFUSION AVEC REACTION DANS LES PROCESSUS DE FORMATION DE TITANATE ET ZIRCONATE DE PLOMBPRISEDSKIJ VV; KLEVTSOVA LG; KLIMOV VV et al.1974; IZVEST. AKAD. NAUK S.S.S.R., NEORG. MATER.; S.S.S.R.; DA. 1974; VOL. 10; NO 12; PP. 2166-2172; BIBL. 21 REF.Article

LA REORIENTATION DES COMPLEXES ME2+ - LACUNE DANS LES CHLORURES DE POTASSIUM ET DE RUBIDIUMMURIN IV; KORNEV BF; GLUMOV AV et al.1976; FIZ. TVERD. TELA; S.S.S.R.; DA. 1976; VOL. 18; NO 11; PP. 3372-3375; BIBL. 16 REF.Article

CRISTALLISATION ORIENTEE DU BISMUTH. III. DETERMINATION DE LA CONCENTRATION EUTECTIQUE DE CERTAINS METAUX DANS LE DOMAINE DU BISMUTH PURSHAVINSKIJ BM; ARTYUKHIN PI; MITYAKIN YU L et al.1979; IZV. SIB. OTD. AKAD. NAUK SSSR, SER. HIM. NAUK; ISSN 0002-3426; SUN; DA. 1979; NO 5; PP. 70-74; ABS. ENG; BIBL. 23 REF.Article

PROFILS DE DEFAUTS LORS DE L'IMPLANTATION D'IONS DANS LE SILICIUMGASHTOL'D VN; GERASIMENKO NN; DVURECHENSKIJ AV et al.1975; FIZ. TEKH. POLUPROVODN.; S.S.S.R.; DA. 1975; VOL. 9; NO 5; PP. 835-839; BIBL. 16 REF.Article

ETUDE DES MECANISMES D'AUTOCOMPENSATION DANS LE SULFURE DE CADMIUM.DUGUE M; PLOIX JL; VANDENDUNDER B et al.1974; REV. TECH. THOMSON-CSF; FR.; DA. 1974; VOL. 6; NO 2; PP. 457-477; ABS. ANGL. ALLEM.; BIBL. 16 REF.Article

CRITICAL CONCENTRATION FOR METTALIZATION OF DOPED GERMANIUM AND SILICON.BERGGREN KF; SERNELIUS B.1976; SOLID STATE COMMUNIC.; G.B.; DA. 1976; VOL. 19; NO 6; PP. 487-489; BIBL. 15 REF.Article

IONIC CONDUCTIVITY AND POINT DEFECTS IN PURE AND DOPED MNF2 AND MGF2 SINGLE CRYSTALS.PARK DS; NOWICK AS.1976; J. PHYS. CHEM. SOLIDS; G.B.; DA. 1976; VOL. 37; NO 6; PP. 607-617; BIBL. 31 REF.Article

MAGNETIC FIELD AND STRESS-INDUCED SPLITTING OF THE NOVEL SHARP EMISSION LINE SERIES IN SILICON ASSOCIATED WITH P, LI, OR B: NO BOUND MULTIPLE-EXCITON COMPLEXES.SAUER R; WEBER J.1976; PHYS. REV. LETTERS; U.S.A.; DA. 1976; VOL. 36; NO 1; PP. 48-51; BIBL. 14 REF.Article

THE PROPERTIES OF THE ION CR5+ IN AL2O3. I. THE INITIAL DETECTION USING THERMAL CONDUCTIVITY TECHNIQUES.BROWN MA.1976; J. PHYS. C; G.B.; DA. 1976; VOL. 9; NO 10; PP. 1955-1964; BIBL. 16 REF.Article

EFFECT OF IMPURITIES ON THE THERMOELECTRIC POWER OF AMORPHOUS GERMANIUM.BARTHWAL SK; PREM NATH; CHOPRA KL et al.1975; SOLID STATE COMMUNIC.; G.B.; DA. 1975; VOL. 16; NO 6; PP. 723-727; BIBL. 11 REF.Article

SUPERCONDUCTIVITY IN METASTABLE PD-ALLOYS PRODUCED BY ION IMPLANTATION AT LOW TEMPERATURES.STRITZKER B; BECKER J.1975; PHYS. LETTERS, A; NETHERL.; DA. 1975; VOL. 51; NO 3; PP. 147-148; BIBL. 13 REF.Article

AN EPR ANALYSIS OF YB, ER AND SM CENTRES IN STRONTIUM FLUORIDE.NEWMANN RC; WOODWARD RJ.1974; J. PHYS. C; G.B.; DA. 1974; VOL. 23; NO 7; PP. L432-L435; BIBL. 23 REF.Article

EFFET DES ELEMENTS DOPANTS DANS LES MONOCRISTAUX DE GERMANIUM SUR LE COURANT INVERSESHAPOVALOV VP; LEVINZON DI.1972; POLUPROVODN. TEKH. MIKROELEKTRON., U.S.S.R.; S.S.S.R.; DA. 1972; NO 9; PP. 72-74; BIBL. 10 REF.Serial Issue

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