A DEEP CENTER ASSOCIATED WITH THE PRESENCE OF NITROGEN IN GAP.SMITH BL; HAYES TJ; PEAKER AR et al.1975; APPL. PHYS. LETTERS; U.S.A.; DA. 1975; VOL. 26; NO 3; PP. 122-124; BIBL. 13 REF.Article

NOVEL TECHNIQUE FOR MEASURING NITROGEN PROFILES IN GAP:N.JAGDEEP SHAH; LEHENY RF; DAPKUS PD et al.1975; J. APPL. PHYS.; U.S.A.; DA. 1975; VOL. 46; NO 12; PP. 5244-5246; BIBL. 12 REF.Article

OPTICAL PUMPING IN NITROGEN-DOPED GAP.LEHENY RF; SAGDEEP SHAH.1975; PHYS. REV., B; U.S.A.; DA. 1975; VOL. 12; NO 8; PP. 3268-3274; BIBL. 14 REF.Article

PHOTOCURRENT MEASUREMENTS ON GAP:N GREEN-LIGHT-EMITTING DIODESKRESSEL H; LADANY I.1973; APPL. PHYS. LETTERS; U.S.A.; DA. 1973; VOL. 22; NO 5; PP. 224-226; BIBL. 5 REF.Serial Issue

LUMINESCENT PROPERTIES VARIATION TOWARD GROWTH DIRECTION IN NITROGEN DOPED GAP N-LPE LAYER.BEPPU T.1975; JAP. J. APPL. PHYS.; JAP.; DA. 1975; VOL. 14; NO 6; PP. 761-768; BIBL. 18 REF.Article

EXTRINSIC ELECTROABSORPTION: N SYMMETRY IN GAP.BAUER RS; BURNHAM RD.1975; PHYS. REV. LETTERS; U.S.A.; DA. 1975; VOL. 34; NO 17; PP. 1088-1091; BIBL. 20 REF.Article

THE LUMINESCENT PROPERTIES OF NITROGEN DOPED GAASP LIGHT EMITTING DIODESCRAFORD MG; KEUNE DL; GROVES WO et al.1973; J. ELECTRON. MATER.; U.S.A.; DA. 1973; VOL. 2; NO 1; PP. 137-158; BIBL. 12 REF.Serial Issue

AN EXPERIMENTAL STUDY OF HIGH-EFFICIENCY GAP:N GREEN-LIGHT-EMITTING DIODESLADANY I; KRESSEL H.1972; R.C.A. REV.; U.S.A.; DA. 1972; VOL. 33; NO 3; PP. 517-536; BIBL. 8 REF.Serial Issue

CATHODOLUMINESCENCE DU CARBURE DE SILICIUM DOPE AU BORE ET A L'AZOTEANDREEV AP; VIOLIN EH E; TAIROV YU M et al.1973; FIZ. TEKH. POLUPROVODN.; S.S.S.R.; DA. 1973; VOL. 7; NO 2; PP. 291-294; BIBL. 7 REF.Serial Issue

RADIATIVE RECOMBINATION MECHANISMS IN GAASP DIODES WITH AND WITHOUT NITROGEN DOPINGCRAFORD MG; SHAW RW; HERZOG AH et al.1972; J. APPL. PHYS.; U.S.A.; DA. 1972; VOL. 43; NO 10; PP. 4075-4083; BIBL. 25 REF.Serial Issue

CORRESPONDENCE BETWEEN NONRADIATIVE DARK SPOTS, MICROPLASMA EMISSIONS, AND DISLOCATION PITS IN GAP:N LIGHT-EMITTING DIODES.KAJIMURA T; AIKI K; UMEDA J et al.1975; J. ELECTROCHEM. SOC.; U.S.A.; DA. 1975; VOL. 122; NO 11; PP. 1559-1560; BIBL. 6 REF.Article

ELECTRIC QUADRUPOLE RELAXATION OF N¹⁴ IN ETHYLENEDIAMINE.ABE Y; OHNEDA Y; NIKI H et al.1976; J. PHYS. SOC. JAP.; JAP.; DA. 1976; VOL. 40; NO 2; PP. 530-539; BIBL. 19 REF.Article

IDENTIFICATION OF RECOMBINATION LUMINESCENCE TRANSITIONS IN N-DOPED GAAS_1-XP_X (X=0.87).WOLFORD DJ; STREETMAN BG; NELSON RJ et al.1976; SOLID STATE COMMUNIC.; G.B.; DA. 1976; VOL. 19; NO 8; PP. 741-747; BIBL. 30 REF.Article

ON THE ROLE OF BORON IN THE LUMINESCENCE OF SILICON DOPED WITH NITROGEN AND BORON.HAGEN SH; VAN KEMENADE AWC.1976; PHYS. STATUS SOLIDI, A; ALLEM.; DA. 1976; VOL. 33; NO 1; PP. 97-105; ABS. ALLEM.; BIBL. 21 REF.Article

ELECTRICAL PROPERTIES OF NITROGEN-DOPED GAP.STRINGFELLOW GB; HALL HT JR; BURMEISTER RA et al.1975; J. APPL. PHYS.; U.S.A.; DA. 1975; VOL. 46; NO 7; PP. 3007-3011; BIBL. 25 REF.Article

LIFETIME SPECTRA (77^OK) OF NITROGEN-DOPED GAAS_1-XP_X.LEE MH; HOLONYAK N JR; NELSON RJ et al.1975; J. APPL. PHYS.; U.S.A.; DA. 1975; VOL. 46; NO 3; PP. 1290-1298; BIBL. 29 REF.Article

RESONANT ENHANCEMENT (.) OF THE RECOMBINATION PROBABILITY AT THE NITROGEN-TRAP, GAMMA -BAND EDGE CROSSOVER IN GAAS_1-XP_X: N(E_N=E_GAMMA , X=X_N).COLEMAN JJ; HOLONYAK N JR; KUNZ AB et al.1975; SOLID STATE COMMUNIC.; G.B.; DA. 1975; VOL. 16; NO 3; PP. 319-322; BIBL. 10 REF.Article

NONMETALLIC CRYSTALS WITH HIGH THERMAL CONDUCTIVITYSLACK GA.1973; J. PHYS. CHEM. SOLIDS; G.B.; DA. 1973; VOL. 34; NO 2; PP. 321-335; BIBL. 99 REF.Serial Issue

DEGRADATION OF GAP:N LEDS.STRINGFELLOW GB; CASS TR; BURMEISTER RA et al.1977; J. ELECTRON. MATER.; U.S.A.; DA. 1977; VOL. 6; NO 3; PP. 295-318; BIBL. 2 P. 1/2Article

SUPERCONDUCTIVITY IN METASTABLE PD-ALLOYS PRODUCED BY ION IMPLANTATION AT LOW TEMPERATURES.STRITZKER B; BECKER J.1975; PHYS. LETTERS, A; NETHERL.; DA. 1975; VOL. 51; NO 3; PP. 147-148; BIBL. 13 REF.Article

ACOUSTIC EMISSION STUDY OF DEFECTS IN GALLIUM PHOSPHIDE LIGHT EMITTING DIODESIKOMA T; OGURA M; ADACHI Y et al.1979; J. ELECTRON. MATER.; USA; DA. 1979; VOL. 8; NO 4; PP. 529-543; BIBL. 5 REF.Article

OXYGEN GETTERING IN GREEN GAP: N LED'S GROWN BY OVERCOMPENSATED LPE.MURAU PC; BHARGAVA RN.1976; J. ELECTROCHEM. SOC.; U.S.A.; DA. 1976; VOL. 123; NO 5; PP. 728-733; BIBL. 39 REF.Article

RADIATIVE RECOMBINATION EFFICIENCIES IN GA(AS, P): N AND (IN, GA)P: N.KLEIMAN GG.1976; J. APPL. PHYS.; U.S.A.; DA. 1976; VOL. 47; NO 1; PP. 180-189; BIBL. 34 REF.Article

EFFECT OF LIGHT ELEMENTS (N,C,O) IN TANTALUM ON TANTALUM FILM CAPACITOR PROPERTIES.HUTTEMANN RD; MORABITO JM; GERSTENBERG D et al.1975; I.E.E.E. TRANS. PARTS HYBR. PACKAG.; U.S.A.; DA. 1975; VOL. 11; NO 1; PP. 67-72; BIBL. 13 REF.Article

RECOMBINAISON PROCESSES INVOLVING ZN AND N IN GAAS_1-XP_X.CAMPBELL JC; HOLONYAK N JR; LEE MH et al.1974; PHYS. REV., B; U.S.A.; DA. 1974; VOL. 10; NO 4; PP. 1755-1757; BIBL. 10 REF.Article