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A DEEP CENTER ASSOCIATED WITH THE PRESENCE OF NITROGEN IN GAP.SMITH BL; HAYES TJ; PEAKER AR et al.1975; APPL. PHYS. LETTERS; U.S.A.; DA. 1975; VOL. 26; NO 3; PP. 122-124; BIBL. 13 REF.Article

NOVEL TECHNIQUE FOR MEASURING NITROGEN PROFILES IN GAP:N.JAGDEEP SHAH; LEHENY RF; DAPKUS PD et al.1975; J. APPL. PHYS.; U.S.A.; DA. 1975; VOL. 46; NO 12; PP. 5244-5246; BIBL. 12 REF.Article

OPTICAL PUMPING IN NITROGEN-DOPED GAP.LEHENY RF; SAGDEEP SHAH.1975; PHYS. REV., B; U.S.A.; DA. 1975; VOL. 12; NO 8; PP. 3268-3274; BIBL. 14 REF.Article

PHOTOCURRENT MEASUREMENTS ON GAP:N GREEN-LIGHT-EMITTING DIODESKRESSEL H; LADANY I.1973; APPL. PHYS. LETTERS; U.S.A.; DA. 1973; VOL. 22; NO 5; PP. 224-226; BIBL. 5 REF.Serial Issue

LUMINESCENCE SPECTRA OF NITROGEN IN SOLID ARGON. II. THEORY.BRUNO R; JODL HJ.1975; PHYS. STATUS SOLIDI, B; ALLEM.; DA. 1975; VOL. 67; NO 2; PP. 539-550; ABS. ALLEM.; BIBL. 28 REF.Article

LUMINESCENT PROPERTIES VARIATION TOWARD GROWTH DIRECTION IN NITROGEN DOPED GAP N-LPE LAYER.BEPPU T.1975; JAP. J. APPL. PHYS.; JAP.; DA. 1975; VOL. 14; NO 6; PP. 761-768; BIBL. 18 REF.Article

EXTRINSIC ELECTROABSORPTION: N SYMMETRY IN GAP.BAUER RS; BURNHAM RD.1975; PHYS. REV. LETTERS; U.S.A.; DA. 1975; VOL. 34; NO 17; PP. 1088-1091; BIBL. 20 REF.Article

THE LUMINESCENT PROPERTIES OF NITROGEN DOPED GAASP LIGHT EMITTING DIODESCRAFORD MG; KEUNE DL; GROVES WO et al.1973; J. ELECTRON. MATER.; U.S.A.; DA. 1973; VOL. 2; NO 1; PP. 137-158; BIBL. 12 REF.Serial Issue

AN EXPERIMENTAL STUDY OF HIGH-EFFICIENCY GAP:N GREEN-LIGHT-EMITTING DIODESLADANY I; KRESSEL H.1972; R.C.A. REV.; U.S.A.; DA. 1972; VOL. 33; NO 3; PP. 517-536; BIBL. 8 REF.Serial Issue

CATHODOLUMINESCENCE DU CARBURE DE SILICIUM DOPE AU BORE ET A L'AZOTEANDREEV AP; VIOLIN EH E; TAIROV YU M et al.1973; FIZ. TEKH. POLUPROVODN.; S.S.S.R.; DA. 1973; VOL. 7; NO 2; PP. 291-294; BIBL. 7 REF.Serial Issue

RADIATIVE RECOMBINATION MECHANISMS IN GAASP DIODES WITH AND WITHOUT NITROGEN DOPINGCRAFORD MG; SHAW RW; HERZOG AH et al.1972; J. APPL. PHYS.; U.S.A.; DA. 1972; VOL. 43; NO 10; PP. 4075-4083; BIBL. 25 REF.Serial Issue

CORRESPONDENCE BETWEEN NONRADIATIVE DARK SPOTS, MICROPLASMA EMISSIONS, AND DISLOCATION PITS IN GAP:N LIGHT-EMITTING DIODES.KAJIMURA T; AIKI K; UMEDA J et al.1975; J. ELECTROCHEM. SOC.; U.S.A.; DA. 1975; VOL. 122; NO 11; PP. 1559-1560; BIBL. 6 REF.Article

EXCITON ENERGY TRANSFER IN GAP:N.WIESNER PJ; STREET RA; WOLF HD et al.1975; PHYS. REV. LETTERS; U.S.A.; DA. 1975; VOL. 35; NO 20; PP. 1366-1369; BIBL. 10 REF.Article

INFRARED OPTICAL PROPERTIES OF GAAS AFTER N+ ION IMPLANTATION.EULER F; COMER JJ; BERGERON CA et al.1975; J. ELECTRON. MATER.; U.S.A.; DA. 1975; VOL. 4; NO 3; PP. 481-495; BIBL. 1 P. 1/2Article

ON THE POSSIBILITY OF STIMULATED EMISSION IN GAP:N.WOLF HD; RICHTER K; WEYRICH C et al.1974; SOLID STATE COMMUNIC.; G.B.; DA. 1974; VOL. 15; NO 4; PP. 725-727; ABS. ALLEM.; BIBL. 11 REF.Article

EFFET DE LA CONCENTRATION DE L'INDIUM SUR LE SPECTRE ENERGETIQUE DE L'AZOTE DANS LES SOLUTIONS SOLIDES A LARGE BANDE GAXIN1AXP (X>0,9)GARBUZOV DZ; KONNIKOV SG; KOP'EV PS et al.1974; FIZ.-TEKH. POLUPROVODN.; S.S.S.R.; DA. 1974; VOL. 8; NO 8; PP. 1533-1538; BIBL. 8 REF.Article

ELECTRIC QUADRUPOLE RELAXATION OF N14 IN ETHYLENEDIAMINE.ABE Y; OHNEDA Y; NIKI H et al.1976; J. PHYS. SOC. JAP.; JAP.; DA. 1976; VOL. 40; NO 2; PP. 530-539; BIBL. 19 REF.Article

NITROGEN IMPLANTED GERMANIUM: DAMAGE, LATTICE LOCATION, AND ELECTRICAL PROPERTIES.CAMPBELL AB; MITCHELL JB; SHEWCHUN J et al.1975; CANAD. J. PHYS.; CANADA; DA. 1975; VOL. 53; NO 3; PP. 303-309; ABS. FR.; BIBL. 15 REF.Article

EXCITONS IN HIGHLY OPTICALLY EXCITED GALLIUM PHOSPHIDE.PYSHKIN SL; ZIFUDIN LZ.1974; J. LUMINESC.; NETHERL.; DA. 1974; VOL. 9; NO 4; PP. 302-310; BIBL. 22 REF.Article

HEMISPHERICAL GAP: N GREEN ELECTROLUMINESCENT DIODESBACHRACH RZ; DIXON RW; LORIMOR OG et al.1973; SOLID-STATE ELECTRON.; G.B.; DA. 1973; VOL. 16; NO 9; PP. 1037-1042; H.T. 1; BIBL. 17 REF.Serial Issue

IDENTIFICATION OF RECOMBINATION LUMINESCENCE TRANSITIONS IN N-DOPED GAAS1-XPX (X=0.87).WOLFORD DJ; STREETMAN BG; NELSON RJ et al.1976; SOLID STATE COMMUNIC.; G.B.; DA. 1976; VOL. 19; NO 8; PP. 741-747; BIBL. 30 REF.Article

ON THE ROLE OF BORON IN THE LUMINESCENCE OF SILICON DOPED WITH NITROGEN AND BORON.HAGEN SH; VAN KEMENADE AWC.1976; PHYS. STATUS SOLIDI, A; ALLEM.; DA. 1976; VOL. 33; NO 1; PP. 97-105; ABS. ALLEM.; BIBL. 21 REF.Article

ELECTRICAL PROPERTIES OF NITROGEN-DOPED GAP.STRINGFELLOW GB; HALL HT JR; BURMEISTER RA et al.1975; J. APPL. PHYS.; U.S.A.; DA. 1975; VOL. 46; NO 7; PP. 3007-3011; BIBL. 25 REF.Article

LIFETIME SPECTRA (77OK) OF NITROGEN-DOPED GAAS1-XPX.LEE MH; HOLONYAK N JR; NELSON RJ et al.1975; J. APPL. PHYS.; U.S.A.; DA. 1975; VOL. 46; NO 3; PP. 1290-1298; BIBL. 29 REF.Article

RESONANT ENHANCEMENT (.) OF THE RECOMBINATION PROBABILITY AT THE NITROGEN-TRAP, GAMMA -BAND EDGE CROSSOVER IN GAAS1-XPX: N(EN=EGAMMA , X=XN).COLEMAN JJ; HOLONYAK N JR; KUNZ AB et al.1975; SOLID STATE COMMUNIC.; G.B.; DA. 1975; VOL. 16; NO 3; PP. 319-322; BIBL. 10 REF.Article

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