Pascal and Francis Bibliographic Databases

Help

Search results

Your search

kw.\*:("DOPAGE B")

Document Type [dt]

A-Z Z-A Frequency ↓ Frequency ↑
Export in CSV

Publication Year[py]

A-Z Z-A Frequency ↓ Frequency ↑
Export in CSV

Discipline (document) [di]

A-Z Z-A Frequency ↓ Frequency ↑
Export in CSV

Language

A-Z Z-A Frequency ↓ Frequency ↑
Export in CSV

Results 1 to 25 of 192

  • Page / 8
Export

Selection :

  • and

THE BEHAVIOUR OF BORON MOLECULAR ION IMPLANTS INTO SILICONBEANLAND DG.1978; SOLID-STATE ELECTRON.; GBR; DA. 1978; VOL. 21; NO 3; PP. 537-547; BIBL. 48 REF.Article

A VERSATILE BORON DIFFUSION PROCESS.STACH J; KRUEST J.1976; SOLID STATE TECHNOL.; U.S.A.; DA. 1976; VOL. 19; NO 10; PP. 60-67 (3P.); BIBL. 10 REF.Article

EVIDENCE FOR ELECTRONIC STOPPING IN ION IMPLANTATION: SHALLOWER PROFILE OF LIGHTER ISOTOPE 10B IN SI.OHMURA Y; KOIRE K.1975; APPL. PHYS. LETTERS; U.S.A.; DA. 1975; VOL. 26; NO 5; PP. 221-222; BIBL. 5 REF.Article

X-RAY INVESTIGATIONS OF PHOSPHORUS AND BORON IMPLANTED SILICON MONOCRYSTALS.MACIASZEK M; MAYDELL ONDRUSZ E.1975; ACTA PHYS. POLON., A; POLOGNE; DA. 1975; VOL. 47; NO 6; PP. 883-886; BIBL. 5 REF.Article

GROWTH OF BORON-DOPED DIAMOND SEED CRYSTALS BY VAPOR DEPOSITIONPOFERL DJ; GARDNER NC; ANGUS JC et al.1973; J. APPL. PHYS.; U.S.A.; DA. 1973; VOL. 44; NO 4; PP. 1428-1434; BIBL. 26 REF.Serial Issue

SIMULTANEOUS DETERMINATION OF THE TOTAL CONTENT OF BORON AND PHOSPHORUS IN HIGH-RESISTIVITY SILICON BY IR SPECTROSCOPY AT LOW TEMPERATURES.KOLBESEN BO.1975; APPL. PHYS. LETTERS; U.S.A.; DA. 1975; VOL. 27; NO 6; PP. 353-355; BIBL. 16 REF.Article

PROFILS DE DEFAUTS LORS DE L'IMPLANTATION D'IONS DANS LE SILICIUMGASHTOL'D VN; GERASIMENKO NN; DVURECHENSKIJ AV et al.1975; FIZ. TEKH. POLUPROVODN.; S.S.S.R.; DA. 1975; VOL. 9; NO 5; PP. 835-839; BIBL. 16 REF.Article

CHANNELING FLUX IN SINGLE CRYSTALS WITH INTERSTITIAL ATOMS: IMPURITY CONCENTRATION DEPENDENCE.DELLA MEA G; DRIGO AV; LO RUSSO S et al.1974; PHYS. REV., B; U.S.A.; DA. 1974; VOL. 10; NO 5; PP. 1836-1846; BIBL. 16 REF.Article

ENHANCED ANNEAL BEHAVIOUR OF BORON IMPLANTED SILICON.DEVAL S; NUTTALL R.1977; SOLID-STATE ELECTRON.; G.B.; DA. 1977; VOL. 20; NO 4; PP. 381-382; BIBL. 10 REF.Article

THE DERIVATION OF THE ACTIVATION ENERGY FOR BORON DEPOSITION USING A BORON NITRIDE SOURCE.CROOKE M; LUTSCH AGK.1976; MICROELECTRONICS; G.B.; DA. 1976; VOL. 7; NO 3; PP. 49-52; BIBL. 6 REF.Article

SPATIAL DISTRIBUTION OF DEFECTS PRODUCED BY BORON ION IMPLANTATION OF SILICON.YUDIN VV; KURINNY VI; AKIMOV YS et al.1975; RAD. EFFECTS; G.B.; DA. 1975; VOL. 24; NO 1; PP. 59-61; BIBL. 9 REF.Article

DISTRIBUTION SPATIALE DES DEFAUTS APPARAISSANT DANS LE SILICIUM LORS DE L'IMPLANTATION D'IONS DE BOREYUDIN VV; EROKHIN IL.1975; MIKROELEKTRONIKA; S.S.S.R.; DA. 1975; VOL. 4; NO 1; PP. 70-75; BIBL. 9 REF.Article

MEASUREMENT OF BORON IMPURITY PROFILES IN SI USING GLOW DISCHARGE OPTICAL SPECTROSCOPY.GREENE JE; SEQUEDA OSORIO F; STREETMAN BG et al.1974; APPL. PHYS. LETTERS; U.S.A.; DA. 1974; VOL. 25; NO 8; PP. 345-438; BIBL. 22 REF.Article

COMMENT ON "EVIDENCE FOR ELECTRONIC STOPPING IN ION IMPLANTATION: SHALLOWER PROFILE OF LIGHTER ISOTOPE 10B IN SI".VAIDYANATHAN KV; CHATTERJEE PK; STREETMAN BG et al.1975; APPL. PHYS. LETTERS; U.S.A.; DA. 1975; VOL. 27; NO 12; PP. 648-649; BIBL. 6 REF.Article

BESTIMMUNG DER IMPLANTATIONSPROFILE VON B, P UND AS IN SILIZIUM. = DETERMINATION DES PROFILS D'IMPLANTATION DE B, P ET AS DANS LE SILICIUMROSS R.1975; ISOTOPENPRAXIS; DTSCH.; DA. 1975; VOL. 11; NO 5; PP. 186-190; ABS. ANGL. RUSSE; BIBL. 24 REF.Article

THE GETTERING OF BORON BY AN ION-IMPLANTED ANTIMONY LAYER IN SILICON.FAIR RB; PAPPAS PN.1975; SOLID-STATE ELECTRON.; G.B.; DA. 1975; VOL. 18; NO 12; PP. 1131-1134; BIBL. 12 REF.Article

GASBLAESCHEN IN BOR-GEDOPTEM SINTERMOLYBDAN = BULLES DE GAZ DANS LE MOLYBDENE FRITTE DOPE AU BOREBENESOVSKY F; STICKLER R.1974; NATURWISSENSCHAFTEN; DTSCH.; DA. 1974; VOL. 61; NO 2; PP. 78-79; BIBL. 3 REF.Article

ISOTHERMAL ANNEALING OF BORON IMPLANTED SILICON.PETERSTROEM S; HOLME'N G.1974; PHYS. SCRIPTA; SUEDE; DA. 1974; VOL. 10; NO 3; PP. 142-144; BIBL. 9 REF.Article

BORON-IMPLANTED PROFILES IN DIAMOND.BLANCHARD B; COMBASSON JL; BOURGOIN JC et al.1976; APPL. PHYS. LETTERS; U.S.A.; DA. 1976; VOL. 28; NO 1; PP. 7-8; BIBL. 22 REF.Article

ELECTRON MICROSCOPE OBSERVATIONS OF PRECIPITATION IN BORON IMPLANTED SILICON.COMER JJ; ROOSILD SD.1975; RAD. EFFECTS; G.B.; DA. 1975; VOL. 25; NO 4; PP. 275-277; BIBL. 6 REF.Article

THE DETERMINATION OF LOW DOSE BORON IMPLANTED CONCENTRATION PROFILES IN SILICON BY THE (N,ALPHA ) REACTION.MULLER K; HENKELMANN R; BOROFFKA H et al.1975; NUCL. INSTRUM. METHODS; NETHERL.; DA. 1975; VOL. 129; NO 2; PP. 557-559; BIBL. 7 REF.Article

ETUDE DE LA DISTRIBUTION DU BORE DANS LES COUCHES MINCES DE SI DIFFUSEESVIGDOROVICH VN; ZAVODYAN AV; ORLOV PB et al.1975; IZVEST. AKAD. NAUK S.S.S.R., NEORG. MATER.; S.S.S.R.; DA. 1975; VOL. 11; NO 5; PP. 802-805; BIBL. 10 REF.Article

REDISTRIBUTION DU BORE DANS LE SILICIUM PAR IRRADIATION A HAUTE TEMPERATURE.BARUCH P; MONNIER J; BLANCHARD B et al.1974; VIDE; FR.; DA. 1974; NO 171 SUPPL.; PP. 126-132; ABS. ANGL.; BIBL. 12 REF.; (APPL. PROCESSUS ELECTRON. IONIQUES. IVE. CONGR. INT. AVISEM 74; TOULOUSE; 1974)Conference Paper

BORON IMPLANTATIONS IN SILICON: A COMPARISON OF CHARGE CARRIER AND BORON CONCENTRATION PROFILES.HOFKER WK; WERNER HW; OOSTHOEK DP et al.1974; APPL. PHYS.; GERM.; DA. 1974; VOL. 4; NO 2; PP. 125-133; BIBL. 21 REF.Article

TRANSPORT DU BORE DE LA SOURCE A LA COUCHE EPITAXIQUE LORS DE LA SUBLIMATION DE SILICIUM SOUS VIDELOGINOVA RG; RUBTSOVA RA; OVSYANNIKOV MI et al.1973; KRISTALLOGRAFIJA; S.S.S.R.; DA. 1973; VOL. 18; NO 2; PP. 374-376; BIBL. 4 REF.Serial Issue

  • Page / 8