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EFFECT OF INDIUM ON CRYSTALLISATION OF SELENIUM.SIRDESHMUKH DB; BHASKER RAO T.1975; CURR. SCI.; INDIA; DA. 1975; VOL. 44; NO 14; PP. 515-516; BIBL. 4 REF.Article

VACANCY TRAPPING AND DETRAPPING BY 111IN IMPLANTED IN NI AS OBSERVED BY TIME-DIFFERENTIAL PERTURBED ANGULAR CORRELATIONS.HOHENEMSER C; ARENDS A; DEWAARD H et al.1975; PHYS. REV., B; U.S.A.; DA. 1975; VOL. 11; NO 11; PP. 4522-4524; BIBL. 8 REF.Article

THE DEFECT STRUCTURE OF CDTE: SELF-DIFFUSION DATA.CHEAN SS; KROGER FA.1975; J. SOLID STATE CHEM.; G.B.; DA. 1975; VOL. 14; NO 1; PP. 44-51; BIBL. 15 REF.Article

INFLUENCE DE PETITES ADDITIONS D'INDIUM SUR LA CROISSANCE DES CRISTAUX DE GALLIUM A PARTIR DE LA SOLUTIONSTOJCHEV NV; ALFINTSEV GA; OVSIENKO DE et al.1975; KRISTALLOGRAFIJA; S.S.S.R.; DA. 1975; VOL. 20; NO 4; PP. 823-828; BIBL. 7 REF.Article

INFLUENCE DES CONDITIONS DE CROISSANCE ET DU NIVEAU DE DOPAGE SUR LE COEFFICIENT DE DISTRIBUTIONGUBENKO A YA.1975; IZVEST. AKAD. NAUK S.S.S.R., NEORG. MATER.; S.S.S.R.; DA. 1975; VOL. 11; NO 5; PP. 789-794; BIBL. 25 REF.Article

THE DEFECT STRUCTURE OF CDTE: HALL DATA.CHERN SS; VYDYANATH HR; KROGER FA et al.1975; J. SOLID STATE CHEM.; G.B.; DA. 1975; VOL. 14; NO 1; PP. 33-43; BIBL. 17 REF.Article

CREATION DES CENTRES HA(A+) LORS DE LA DELOCALISATION OPTIQUE DES TROUS A PARTIR DES CENTRES A2+ DANS LE KCLZAZUBOVICH SG; OSMININ VS.1975; ZH. PRIKL. SPEKTROSK., BELORUS. S.S.R.; S.S.S.R.; DA. 1975; VOL. 23; NO 1; PP. 90-96; BIBL. 21 REF.Article

TEMPERATURE DEPENDENCE OF THE A BAND OF TL+-TYPE CENTERS IN ALKALI HALIDE CRYSTALS UNDER HIGH PRESSURE.MASUNAGA S; ABE T.1974; J. PHYS. SOC. JAP.; JAP.; DA. 1974; VOL. 37; NO 6; PP. 1540-1544; BIBL. 5 REF.Article

THALLIUM AND INDIUM DOPED PB1-XSNXTE BY LIQUID PHASE EPITAXY.TOMASETTA LR; FONSTAD CG.1974; MATER. RES. BULL.; U.S.A.; DA. 1974; VOL. 9; NO 6; PP. 799-802; BIBL. 4 REF.Article

COMPENSATION OF RESIDUAL BORON IMPURITIES IN EXTRINSIC INDIUM-DOPED SILICON BY NEUTRON TRANSMUTATION OF SILICON.THOMAS RN; BRAGGINS TT; HOBGOOD HM et al.1978; J. APPL. PHYS.; USA; DA. 1978; VOL. 49; NO 5; PP. 2811-2820; BIBL. 18 REF.Article

APPLICATION DE LA THEORIE DE LA DIFFUSION A PLUSIEURS CONSTITUANTS A LA DESCRIPTION DE LA DISTRIBUTION DES IMPURETES DANS UN DOPAGE COMPLEXE DES SEMICONDUCTEURS PAR DIFFUSIONUSKOV VA; KONDRACHENKO OE; KONDRACHENKO LA et al.1977; IZVEST. AKAD. NAUK S.S.S.R., NEORG. MATER.; S.S.S.R.; DA. 1977; VOL. 13; NO 18; PP. 1353-1356; BIBL. 4 REF.Article

INFLUENCE DES IMPURETES SUR LA STRUCTURE ET LES PROPRIETES OPTIQUES DES COUCHES DE SNO2IVANTSEV AS; KONYASHKINA VI.1979; IZV. AKAD. NAUK SSSR, NEORG. MATER.; ISSN 0002-337X; SUN; DA. 1979; VOL. 15; NO 12; PP. 2246-2247; BIBL. 4 REF.Article

COEFFICIENTS DE DISTRIBUTION DE AG, IN ET CU DANS ZNSEFADEEV AV; VAN KV; GASPARYANTS NR et al.1977; IZVEST. AKAD. NAUK S.S.S.R., NEORG. MATER.; S.S.S.R.; DA. 1977; VOL. 13; NO 10; PP. 1920-1921; BIBL. 8 REF.Article

SOLUTION GROWTH OF INDIUM-DOPED SILICONSCOTT W; HAGER RJ.1979; J. ELECTRON. MATER.; USA; DA. 1979; VOL. 8; NO 5; PP. 581-602; BIBL. 19 REF.Article

ANNEALING BEHAVIOR OF IN IMPLANTED IN SI STUDIED BY PERTURBED ANGULAR CORRELATION.KAUFMANN EN; KALISH R; NAUMANN RA et al.1977; J. APPL. PHYS.; U.S.A.; DA. 1977; VOL. 48; NO 8; PP. 3332-3336; BIBL. 12 REF.Article

PRECIPITATION IN PURE AND INDIUM-DOPED CDTE AS A FUNCTION OF STOICHIOMETRY.SELIM FA; SWAMINATHAN V; KROGER FA et al.1975; PHYS. STATUS SOLIDI, A; ALLEM.; DA. 1975; VOL. 29; NO 2; PP. 465-473; ABS. ALLEM.; BIBL. 22 REF.Article

TWO-STAGES OF BINDING ENERGY BETWEEN VACANCIES AND IN ATOMS IN AN AL MATRIX.EPPERSON JE; FURNROHR P; GEROLD V et al.1975; MATER. SCI. ENGNG; NETHERL.; DA. 1975; VOL. 19; NO 1; PP. 95-103; BIBL. 31 REF.Article

ELECTRICAL ACTIVITY AND RADIATION DAMAGE IN ION IMPLANTED CADMIUM TELLURIDE.GETTINGS M; STEPHENS KG.1974; RAD. EFFECTS; G.B.; DA. 1974; VOL. 22; NO 1; PP. 53-62; BIBL. 19 REF.Article

CINETIQUE DE CRISTALLISATION DE AS2SE3 VITREUX DOPE A L'INDIUMSHKOL'NIKOV EV; BESSONOVA EH YU; KRIVENKOVA NP et al.1974; IZVEST. AKAD. NAUK S.S.S.R., NEORG. MATER.; S.S.S.R.; DA. 1974; VOL. 10; NO 11; PP. 1946-1950; BIBL. 7 REF.Article

INCORPORATION OF IMPLANTED IN AND SB IN SILICON DURING AMORPHOUS LAYER REGROWTHBLOOD P; BROWN WL; MILLER GL et al.1979; J. APPL. PHYS.; USA; DA. 1979; VOL. 50; NO 1; PP. 173-182; BIBL. 30 REF.Article

LASER ANNEALING OF INDIUM-IMPLANTED SILICONKURNAEV S; UGGERH NONOJ E.1979; RAD. EFFECTS; GBR; DA. 1979; VOL. 40; NO 1-2; PP. 91-94; BIBL. 20 REF.Article

DOSE-RATE DEPENDENCE OF THE IMPURITY-DEFECT INTERACTION IN SILVERTHOME L; BERNAS H.1976; PHYS. REV. LETTERS; U.S.A.; DA. 1976; VOL. 36; NO 17; PP. 1055-1057; BIBL. 13 REF.Article

MOESSBAUER STUDY OF A COMPLEX SN IMPURITY DEFECT IN GAAS FROM IMPLANTATIONS OF RADIOACTIVE 119IN IONSWEYER G; DAMGAARD S; PETERSEN JW et al.1980; J. PHYS. C:SOLID STATE PHYS.; ISSN 0022-3719; GBR; DA. 1980; VOL. 13; NO 9; PP. L181-L183; BIBL. 6 REF.Article

LASER ANNEALING OF INDIUM-IMPLANTED PB0.8 SN0.2 TE FILMSBAHIR G; BERNSTEIN T; KALISH R et al.1979; APPL. PHYS. LETTERS; USA; DA. 1979; VOL. 34; NO 8; PP. 486-488; BIBL. 12 REF.Article

ETUDE PAR DES TECHNIQUES NUCLEAIRES DE L'INTERACTION ENTRE DEFAUTS ET IMPURETES IMPLANTEES DANS UN METALTHOME LIONEL.1978; ; FRA; DA. 1978; 1970; 198 P.; 29 CM; BIBL. DISSEM.; TH.: SCI. PHYS./PARIS 11/1978; IPNO-PHN 78 T 05Thesis

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