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EFFECT OF OXYGEN ON DISLOCATION MOVEMENT IN SILICON.HU SM; PATRICK WJ.1975; J. APPL. PHYS.; U.S.A.; DA. 1975; VOL. 46; NO 5; PP. 1869-1874; BIBL. 14 REF.Article

CHANNELING FLUX IN SINGLE CRYSTALS WITH INTERSTITIAL ATOMS: IMPURITY CONCENTRATION DEPENDENCE.DELLA MEA G; DRIGO AV; LO RUSSO S et al.1974; PHYS. REV., B; U.S.A.; DA. 1974; VOL. 10; NO 5; PP. 1836-1846; BIBL. 16 REF.Article

X-RAY TOPOGRAPHY OF DEFECTS PRODUCED AFTER HEAT TREATMENT OF DISLOCATION-FREE SILICON CONTAINING OXYGEN.PATEL JR; AUTHIER A.1975; J. APPL. PHYS.; U.S.A.; DA. 1975; VOL. 46; NO 1; PP. 118-125; BIBL. 17 REF.Article

RESISTIVITY ANNEALING PROPERTIES OF ALUMINIUM THIN FILMS AFTER ION IMPLANTATION AT LIQUID HELIUM TEMPERATURES.LAMOISE AM; CHAUMONT J; MEUNIER F et al.1975; J. PHYS., LETTRES; FR.; DA. 1975; VOL. 36; NO 12; PP. L.305-L.308; ABS. FR.; BIBL. 6 REF.Article

THE EFFECTS OF OXYGEN DOPING AND SUBSEQUENT ANNEALING IN NITROGEN ON THE STRUCTURE OF POLYCRYSTALLINE SILICONMCGINN JT; GOODMAN AM.1979; APPL. PHYS. LETTERS; USA; DA. 1979; VOL. 34; NO 9; PP. 601-604; BIBL. 11 REF.Article

DISLOCATION PINNING EFFECT OF OXYGEN ATOMS IN SILICON.HU SM.1977; APPL. PHYS. LETTERS; U.S.A.; DA. 1977; VOL. 31; NO 2; PP. 53-55; BIBL. 14 REF.Article

INTERACTION DES ATOMES DE CUIVRE AVEC LES DEFAUTS DE STRUCTURE DU GERMANIUM DOPE PAR L'OXYGENEBABICH VM; ZOZULYA AI; IL'CHISHIN VA et al.1976; UKRAIN. FIZ. ZH.; S.S.S.R.; DA. 1976; VOL. 21; NO 4; PP. 610-615; ABS. ANGL.; BIBL. 15 REF.Article

ION BEAM SPUTTERING. THE EFFECT OF INCIDENT ION ENERGY ON ATOMIC MIXING IN SUBSURFACE LAYERS.MCHUGH JA.1974; RAD. EFFECTS; G.B.; DA. 1974; VOL. 21; NO 4; PP. 209-215; BIBL. 11 REF.Article

DEPTH DISTRIBUTION STUDIES OF CARBON, OXYGEN AND NITROGEN IN METAL SURFACES BY MEANS OF NEUTRON SPECTROMETRY.LORENZEN J.1975; AE-502; SWED.; DA. 1975; PP. (30P.); H.T. 23; BIBL. 2 P.Report

ANNEALING BEHAVIOR OF THE OXYGEN DONOR IN SILICONKANAMORI A.1979; APPL. PHYS. LETTERS; USA; DA. 1979; VOL. 34; NO 4; PP. 287-289; BIBL. 10 REF.Article

HIGH OXYGEN CZOCHRALSKI SILICON CRYSTAL GROWTH RELATIONSHIP TO EPITAXIAL STACKING FAULTSKATZ LE; HILL DW.1978; J. ELECTROCHEM. SOC.; USA; DA. 1978; VOL. 125; NO 7; PP. 1151-1155; BIBL. 15 REF.Article

OXYGEN PRECIPITATION AND STACKING-FAULT FORMATION IN DISLOCATION-FREE SILICON.PATEL JR; JACKSON KA; REISS H et al.1977; J. APPL. PHYS.; U.S.A.; DA. 1977; VOL. 48; NO 12; PP. 5279-5288; BIBL. 18 REF.Article

SURFACE- AND INNER-MICRODEFECTS IN ANNEALED SILICON WAFER CONTAINING OXYGENSHIMURA F; TSUYA H; KAWAMURA T et al.1980; J. APPL. PHYS.; ISSN 0021-8979; USA; DA. 1980; VOL. 51; NO 1; PP. 269-273; BIBL. 17 REF.Article

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A COMPARISON OF TECHNIQUES FOR DEPTH PROFILING OXYGEN IN SILICONMEZEY G; KOTAI E; NAGY T et al.1979; NUCL. INSTRUM. METHODS; NLD; DA. 1979; VOL. 167; NO 2; PP. 279-287; BIBL. 7 REF.Article

INTERSTITIAL OXYGEN GETTERING IN CZOCHRALSKI SILICON WAFERS.ROZGONYI GA; PEARCE GW.1977; APPL. PHYS. LETTERS; U.S.A.; DA. 1977; VOL. 31; NO 5; PP. 343-345; BIBL. 10 REF.Article

OXYGEN INCORPORATION IN THE ALKALINE EARTH FLUORIDES.CATLOW CRA.1977; J. PHYS. CHEM. SOLIDS; G.B.; DA. 1977; VOL. 38; NO 10; PP. 1131-1136; BIBL. 28 REF.Article

SOLUTE DIFFUSION GROWTH OF GAP.MORAVEC F; NOVOTNY J.1976; J. CRYST. GROWTH; NETHERL.; DA. 1976; VOL. 33; NO 1; PP. 90-98; BIBL. 23 REF.Article

ETUDE DES DEFAUTS PONCTUELS DANS LE ZIRCONIUM DE HAUTE PURETE DEFORME A TRES BASSE TEMPERATURE. INFLUENCE DE L'OXYGENEFROMONT JP.1975; ; S.L.; DA. 1975; PP. 1-54; H.T. 25; BIBL. 2 P.; (THESE DOCT. 3E CYCLE, SPEC. PHYS., MENTION METALL.; PARIS VI)Thesis

DIFFUSE NEUTRON SCATTERING IN NIOBIUM CONTAINING INTERSTITIAL OXYGEN IMPURITIESDE NOVION CH; JUST W.1978; J. PHYS. F; GBR; DA. 1978; VOL. 8; NO 8; PP. 1627-1636; BIBL. 20 REF.Article

A MODEL FOR THE FORMATION OF STACKING FAULTS IN SILICON.MAHAJAN S; ROZGONYI GA; BRASEN D et al.1977; APPL. PHYS. LETTERS; U.S.A.; DA. 1977; VOL. 30; NO 2; PP. 73-75; BIBL. 25 REF.Article

RECUIT DES DEFAUTS DANS LE SILICIUM TREMPE DE TYPE N IRRADIE PAR ELECTRONS RAPIDESBEREZINA GM; KORSHUNOV FP; RAJNES L YU et al.1979; IZVEST. AKAD. NAUK S.S.S.R., NEORG. MATER.; SUN; DA. 1979; VOL. 15; NO 7; PP. 1141-1144; BIBL. 14 REF.Article

NEUTRON SCATTERING AND PROTON SPIN CONVERSION IN SOLID CH₄.LUSHINGTON KJ; MORRISON JA.1977; CANAD. J. PHYS.; CANADA; DA. 1977; VOL. 55; NO 18; PP. 1580-1588; ABS. FR.; BIBL. 30 REF.Article

ZUM NACHWEIS VON SAUERSTOFF IN MIKROBEREICHEN VON VERSETZUNGSFREIEN CZOCHRALSKI-SILIZIUM-EINKRISTALLEN. = MISE EN EVIDENCE D'OXYGENE DANS LES MICRODOMAINES DE MONOCRISTAUX DE SILICIUM, OBTENUS PAR LA METHODE DE CZOCHRALSKI, SOUS DISLOCATIONSGAWORZEWSKI P; HAHLE S; RIEMANN H et al.1977; KRISTALL U. TECH.; DTSCH.; DA. 1977; VOL. 12; NO 8; PP. 871-878; ABS. ANGL.; BIBL. 14 REF.Article