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Results 1 to 25 of 57220

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THERMAL ACTIVATION ENERGY OF THE GOLD-ACCEPTOR LEVEL IN SILICON.ENGSTROM O; GRIMMEISS HG.1975; J. APPL. PHYS.; U.S.A.; DA. 1975; VOL. 46; NO 2; PP. 831-837; BIBL. 29 REF.Article

RECOMBINATION INSTABILITIES IN SEMICONDUCTORS DOPED WITH DEEP TWO-LEVEL TRAPSANTOGNETTI P; CHIABRERA A; RIDELLA S et al.1972; J. APPL. PHYS.; U.S.A.; DA. 1972; VOL. 43; NO 11; PP. 4676-4680; BIBL. 17 REF.Serial Issue

FIELD-INDEPENDENCE OF THERMAL EMISSION RATE IN AU-DOPED SILICONBRAUN S; GRIMMEISS HG.1972; SOLID STATE COMMUNIC.; G.B.; DA. 1972; VOL. 11; NO 10; PP. 1457-1459; ABS. ALLEM.; BIBL. 10 REF.Serial Issue

COMPARAISON DES PARAMETRES, DES THYRISTORS ET DES DIODES DE PUISSANCE, DOPES A L'OR ET AU PLATINEASINA SS; DUMANEVICH AN; RUKHAMKIN VM et al.1979; RADIOTEKH. E EHLEKTRON.; SUN; DA. 1979; VOL. 24; NO 5; PP. 1050-1054; BIBL. 5 REF.Article

EXPERIMENTAL CHARACTERIZATION OF GOLD-DOPED INFRARED-SENSING MOSFET'S.PARKER WC; FORBES L.1975; I.E.E.E. TRANS. ELECTRON DEVICES; U.S.A.; DA. 1975; VOL. 22; NO 10; PP. 916-924; BIBL. 23 REF.Article

THE RELAXED EXCITED STATES OF PAIRED AU- IONS IN POTASSIUM CHLORIDE.TAKEZOE H; ONAKA R.1975; J. PHYS. SOC. JAP.; JAP.; DA. 1975; VOL. 38; NO 3; PP. 810-816; BIBL. 6 REF.Article

COMPORTEMENT DES GRAINS METALLIQUES A LA SURFACE D'UN CRISTAL IONIQUE DANS UN CHAMP ELECTRIQUE EXTERIEURGEGUZIN YA E; KAGANOVSKIJ YU S; ONOPRIENKO AA et al.1975; FIZ. TVERD. TELA; S.S.S.R.; DA. 1975; VOL. 17; NO 3; PP. 711-714; BIBL. 5 REF.Article

RECOMBINAISON DES TROUS SUR LES ATOMES D'OR DANS LE GERMANIUM DE TYPE NABRAMOCHKIN AI; VOEVODIN VG; KRIVOV MA et al.1975; FIZ. TEKH. POLUPROVODN.; S.S.S.R.; DA. 1975; VOL. 9; NO 7; PP. 1335-1338; BIBL. 12 REF.Article

PARTICULARITES DE LA DISTRIBUTION DE LA DENSITE D'ETATS DANS GAAS P FORTEMENT DOPEABDURAKHMANOV KP; MIRAKHMEDOV SH; TESHABAEV A et al.1976; FIZ. TEKH. POLUPROVODN.; S.S.S.R.; DA. 1976; VOL. 10; NO 4; PP. 658-664; BIBL. 18 REF.Article

DC CONDUCTIVITY OF AMORPHOUS GERMANIUM.CAPEK Y; KOC S; ZEMEK J et al.1975; J. NON-CRYST. SOLIDS; NETHERL.; DA. 1975; VOL. 18; NO 1; PP. 95-106; BIBL. 38 REF.Article

DIRECT COMPARISON OF ION-DAMAGE GETTERING AND PHOSPHORUS-DIFFUSION GETTERING AND PHOSPHORUS-DIFFUSION GETTERING OF AU IN SI.SEIDEL TE; MEEK RL; CULLIS AG et al.1975; J. APPL. PHYS.; U.S.A.; DA. 1975; VOL. 46; NO 2; PP. 600-609; BIBL. 16 REF.Article

THE INFLUENCE OF GOLD ON (110) SUBSTRATES AND THE TEMPERATURE DEPENDENCE OF MOS SYSTEMS.NASSIBIAN AG; SPROUL ME.1975; J. PHYS. D; G.B.; DA. 1975; VOL. 8; NO 13; PP. 1507-1512; BIBL. 19 REF.Article

ETUDE DE LA PHOTOCONDUCTIVITE DU GERMANIUM DE TYPE N DOPE A L'OR DANS L'INTERVALLE DE LONGUEURS D'ONDES 20-200 MU MMOROZOVA VA; KUROVA IA; KULAKOVSKIJ VD et al.1974; FIZ. TEKH. POLUPROVODN.; S.S.S.R.; DA. 1974; VOL. 8; NO 9; PP. 1683-1686; BIBL. 13 REF.Article

A NEW GRATING-TYPE GOLD-N-TYPE SILICON SCHOTTKY-BARRIER PHOTODIODECHI TONG WANG; SHENG SAN LI.1973; I.E.E.E. TRANS. ELECTRON DEVICES; U.S.A.; DA. 1973; VOL. 20; NO 6; PP. 525-526; BIBL. 13 REF.Serial Issue

TEMPERATURE DEPENDENCE OF TURN-ON VOLTAGE OF GOLD-DOPED MOSFETS.SPROUL ME; NASSIBIAN AG.1975; I.E.E.E. TRANS. ELECTRON DEVICES; U.S.A.; DA. 1975; VOL. 22; NO 1; PP. 8-14; BIBL. 22 REF.Article

AMPLIFICATION PAR LE CHAMP ET THERMIQUE DE LA PHOTOCONDUCTIVITE NEGATIVE DANS LE GERMANIUM COMPENSE PAR L'ORKLIMKA L; BUMELENE S; KAL'VENAS S et al.1975; LITOV. FIZ. SBOR.; S.S.S.R.; DA. 1975; VOL. 15; NO 4; PP. 595-604; ABS. LITU. ANGL.; BIBL. 19 REF.Article

TEMPERATURE DEPENDENCE OF THE GOLD ACCEPTOR ENERGY LEVEL IN SILICON.ENGSTROM O; GRIMMEISS HG.1974; APPL. PHYS. LETTERS; U.S.A.; DA. 1974; VOL. 25; NO 7; PP. 413-415; BIBL. 9 REF.Article

CONDUCTIVITE DIFFERENTIELLE NEGATIVE DANS GE(AU) P ET DOMAINES SUPERFICIELSKAL'VENAS SP; PUCHINSKAS AA.1975; FIZ. TEKH. POLUPROVODN.; S.S.S.R.; DA. 1975; VOL. 9; NO 3; PP. 437-444; BIBL. 15 REF.Article

DIFFERENCES BETWEEN PLATINUM- AND GOLD-DOPED SILICON POWER DEVICES.MILLER MD.1976; I.E.E.E. TRANS. ELECTRON DEVICES; U.S.A.; DA. 1976; VOL. 23; NO 12; PP. 1279-1283; BIBL. 18 REF.Article

NEGATIVE DIFFERENTIAL RESISTANCE IN GOLD-DOPED HIGH-RESISTIVITY SILICON.MANZEL M; ECKE W; BRUCHLOS H et al.1976; PHYS. STATUS SOLIDI, A; ALLEM.; DA. 1976; VOL. 34; NO 1; PP. 219-226; ABS. ALLEM.; BIBL. 14 REF.Article

CHANNELING AND ELECTRICAL INVESTIGATIONS OF AU DOPED CDTE.AKUTAGAWA W; TURBULL D; CHU WK et al.1974; SOLID STATE COMMUNIC.; G.B.; DA. 1974; VOL. 15; NO 11-12; PP. 1919-1922; BIBL. 9 REF.Article

OBSERVATION OF GOLD LEVELS IN SILICON BY MOS CAPACITANCE MEASUREMENTSSIXOU P; NUZILLAT G.1972; SOLID-STATE ELECTRON.; G.B.; DA. 1972; VOL. 15; NO 8; PP. 945-946; BIBL. 10 REF.Serial Issue

INVESTIGATIONS OF GOLD SURFACE-STATE ENERGY LEVELS IN GOLD-DOPED MOS TRANSISTORSMOGHAL GR.1979; INTERNATION. J. ELECTRON.; GBR; DA. 1979; VOL. 47; NO 2; PP. 107-122; BIBL. 6 REF.Article

DEPLACEMENT THERMIQUE DE LA LIMITE A GRANDE LONGUEUR D'ONDE DES SPECTRES DE PHOTOCONDUCTIVITE D'IMPURETES DANS LE GERMANIUM DOPE PAR LE CUIVRE, LE MERCURE ET L'ORASTAF'EV NI; ROMANYCHEV DA; NIZAMOV AM et al.1974; FIZ. TEKH. POLUPROVODN.; S.S.S.R.; DA. 1974; VOL. 8; NO 9; PP. 1759-1762; BIBL. 13 REF.Article

SUR QUELQUES PARTICULARITES DE LA CINETIQUE DU COURANT LORS DE LA DEFORMATION ET DE LA DECOMPOSITION DU DOMAINE ELECTRIQUE DANS LE GERMANIUM DOPE A L'ORKUROVA IA; ZHELUDEVA SI.1974; FIZ.-TEKH. POLUPROVODN; S.S.S.R.; DA. 1974; VOL. 8; NO 8; PP. 1446-1451; BIBL. 6 REF.Article

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