ETUDE DE LA SEGREGATION INTERGRANULAIRE DU SOUFRE DANS LE CUIVRE.MOYA F; MOYA GONTIER GE.1975; J. PHYS., COLLOQ.; FR.; DA. 1975; VOL. 36; NO 4; PP. C4157-C4164; ABS. ANGL.; BIBL. 10 REF.; (COLLOQ. INT. JOINTS INTERGRANULAIRES METAUX; SAINT-ETIENNE; 1975)Conference Paper

LATTICE LOCATION OF LOW-Z IMPURITIES IN MEDIUM-Z TARGETS USING ION-INDUCED X-RAYS. I. ANALYTICAL TECHNIQUE.CHEMIN JF; MITCHELL IV; SARIS FW et al.1974; J. APPL. PHYS.; U.S.A.; DA. 1974; VOL. 45; NO 2; PP. 532-536; BIBL. 19 REF.Article

LATTICE LOCATION OF LOW-Z IMPURITIES IN MEDIUM-Z TARGETS USING ION-INDUCED X-RAYS. II. PHOSPHORUS AND SULFUR IMPLANTS IN GERMANIUM SINGLE CRYSTALS.CHEMIN JF; MITCHELL IV; SARIS FW et al.1974; J. APPL. PHYS.; U.S.A.; DA. 1974; VOL. 45; NO 2; PP. 537-541; BIBL. 16 REF.Article

GROWTH OF GAP SINGLE CRYSTALS BY THE SYNTHESIS, SOLUTE DIFFUSION METHOD.GILLESSEN K; MARSHALL AJ.1976; J. CRYST. GROWTH; NETHERL.; DA. 1976; VOL. 32; NO 2; PP. 216-220; BIBL. 12 REF.Article

SEGREGATION INTERGRANULAIRE DES ELEMENTS DE LA FAMILLE DU SOUFRE DANS LE FER PUR.PICHARD C; GUTTMANN M; RIEU J et al.1975; J. PHYS., COLLOQ.; FR.; DA. 1975; VOL. 36; NO 4; PP. C4.151-C4.155; ABS. ANGL.; BIBL. 18 REF.; (COLLOQ. INT. JOINTS INTERGRANULAIRES METAUX; SAINT-ETIENNE; 1975)Conference Paper

DOPAGE DES CRISTAUX DE GAP OBTENUS A PARTIR DE GALLIUM FONDUZYKOV AM; OLEJNIKOV YU G; SAMORUKOV BE et al.1974; IZVEST. AKAD. NAUK S.S.S.R., NEORG. MATER.; S.S.S.R.; DA. 1974; VOL. 10; NO 9; PP. 1593-1595; BIBL. 12 REF.Article

PHOTO-EFFECT ON CRYSTALLIZATION KINETICS OF AMORPHOUS SELENIUM DOPED WITH SULPHURKOTKATA MF; AYAD FM; EL MOUSLY MK et al.1979; J. NON-CRYST. SOLIDS; NLD; DA. 1979; VOL. 33; NO 1; PP. 13-22; BIBL. 16 REF.Article

CARBON AND SULPHUR ON THE (111) AND (001) FACES OF NICKEL DURING THERMAL TREATMENT IN ULTRA-HIGH VACUUM AND IN AN OXYGEN ATMOSPHERE.MROZ S; KOZIOL C; KOLACZKIEWICZ J et al.1976; VACUUM; G.B.; DA. 1976; VOL. 26; NO 2; PP. 61-65; BIBL. 9 REF.Article

THE ROLE OF IMPURITIES IN THE STABILITY OF ZNO SURFACES.HOPKINS BJ; LEYSEN R; TAYLOR PA et al.1975; SURF. SCI.; NETHERL.; DA. 1975; VOL. 48; NO 2; PP. 486-496; BIBL. 13 REF.Article

STRUCTURE DE DEFAUTS, PROPRIETES ELECTRIQUES ET DE DIFFUSION DE CDO DOPE PAR LE SOUFRESUNTSOV NV; ARKHAROV VI; ZHURAVLEV NL et al.1980; DOKL. AKAD. NAUK SSSR; ISSN 0002-3264; SUN; DA. 1980; VOL. 251; NO 4; PP. 869-871; BIBL. 13 REF.Article

PURE AND DOPED INDIUM PHOSPHIDE BY VAPOUR PHASE EPITAXY.CLARKE RC; TAYLOR LL.1978; J. CRYST. GROWTH; NETHERL.; DA. 1978; VOL. 43; NO 4; PP. 473-479; BIBL. 17 REF.Article

CONTROL OF SULFUR DOPING FOR GALLIUM ARSENIDE EPITAXIAL LAYERS.SARVA MA.1976; J. ELECTROCHEM. SOC.; U.S.A.; DA. 1976; VOL. 123; NO 10; PP. 1498-1502; BIBL. 19 REF.Article

HVEM INVESTIGATIONS OF CRYSTAL DEFECTS IN S-DOPED LEC-GAP CRYSTALSUMENO M; KAWABE H; DOI K et al.1979; PHILOS. MAG., A; GBR; DA. 1979; VOL. 39; NO 2; PP. 183-194; BIBL. 22 REF.Article

X-RAY STUDY OF LEC-GROWN INP CRYSTALSMATSUI J; WATANABE H; SEKI Y et al.1979; J. CRYST. GROWTH; NLD; DA. 1979; VOL. 46; NO 4; PP. 563-568; BIBL. 10 REF.Article

ETUDE DE L'INTERACTION DONNEUR-ACCEPTEUR EN SOLUTION SOLIDE A BASE DE INAS LORS DU DOPAGE PAR ZN, S, SE ET TEGLAZOV VM; SHVEDKOV EI.1978; IZVEST. AKAD. NAUK S.S.S.R., NEORG. MATER.; SUN; DA. 1978; VOL. 14; NO 6; PP. 1027-1030; BIBL. 8 REF.Article

CONCURRENCE DES ATOMES D'INSERTION EN CAS DE SEGREGATIONS AU NIVEAU DES JOINTS DE GRAINS DANS LE MOLYBDENE ET LE TUNGSTENEBURMAKA LS; DRACHINSKIJ AS; IVASHCHENKO YU N et al.1976; FIZ. METALLOV METALLOVED.; S.S.S.R.; DA. 1976; VOL. 42; NO 5; PP. 1089-1092; BIBL. 19 REF.Article

PARTICULARITES DU DOPAGE DES COUCHES EPITAXIQUES DE PHOSPHURE DE GALLIUM PAR LE SOUFREKUZNETSOV VV; SOROKIN VS; SHAMRAJ VB et al.1980; IZV. AKAD. NAUK SSSR, NEORG. MATER.; ISSN 0002-337X; SUN; DA. 1980; VOL. 16; NO 5; PP. 773-776; BIBL. 16 REF.Article

DEPTH PROFILING OF N-TYPE DOPANTS IN SI AND GAAS USING CS⁺ BOMBARDMENT NEGATIVE SECONDARY ION MASS SPECTROMETRY IN ULTRALIGHT VACUUMMAGEE CW.1979; J. ELECTROCHEM. SOC.; USA; DA. 1979; VOL. 126; NO 4; PP. 660-663; BIBL. 19 REF.Article

GRAIN BOUNDARY SEGREGATION OF SULFUR AND NITROGEN IN SINTERED MOLYBDENUMTUOMINEN SM; CLOUGH SP.1979; METALLURG. TRANS. A; USA; DA. 1979; VOL. 10; NO 1; PP. 127-129; BIBL. 5 REF.Article

ELECTROREFLECTANCE MEASUREMENTS OF LATTICE DAMAGE IN ION IMPLANTED GAAS.ANDERSON WJ; PARK YS.1976; J. APPL. PHYS.; U.S.A.; DA. 1976; VOL. 47; NO 7; PP. 3094-3098; BIBL. 26 REF.Article

THE EFFECT ON VACANCY CLUSTERING OF SULPHUR IN GOLD.FUESSEL FW; SEGALL RL.1976; MATER. SCI. ENGNG; NETHERL.; DA. 1976; VOL. 26; NO 1; PP. 47-51; BIBL. 14 REF.Article

CROISSANCE DES CRISTAUX DE GAP POUR LA PREPARATION DE DIODES A LUMINESCENCE VERTEZYKOV AM; SAMORUKOV BE.1976; IZVEST. AKAD. NAUK S.S.S.R., NEORG. MATER.; S.S.S.R.; DA. 1976; VOL. 12; NO 2; PP. 328-329; BIBL. 5 REF.Article

IMPURITY EFFECTS ON GROWN-IN DISLOCATION DENSITY OF INP AND GAAS CRYSTALS.SEKI Y; WATANABE H; MATSUI J et al.1978; J. APPL. PHYS.; U.S.A.; DA. 1978; VOL. 49; NO 2; PP. 822-828; BIBL. 19 REF.Article

A TECHNIQUE FOR UNIFORM ETCHING OF POLISHED GALLIUM PHOSPHIDE.DOBBS BC; MIYAZAKI T; PARK YS et al.1978; J. ELECTROCHEM. SOC.; U.S.A.; DA. 1978; VOL. 125; NO 2; PP. 347; BIBL. 4 REF.Article

VAPOUR GROWTH AND EPITAXY.1977; J. CRYST. GROWTH; NETHERL.; DA. 1977; VOL. 42; PP. 53-182; BIBL. DISSEM.; (INT. CONF. CRYST. GROWTH. 5; CAMBRIDGE, MASS.; 1977)Conference Paper