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Results 1 to 25 of 63

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PERFECT CRYSTAL GROWTH OF SILICON BY VAPOR DEPOSITION.NISHIZAWA J; TERASAKI T; YAGI K et al.1975; J. ELECTROCHEM. SOC.; U.S.A.; DA. 1975; VOL. 122; NO 5; PP. 664-669; BIBL. 17 REF.Article

LA MICROANALYSE PAR UNE TECHNIQUE DE RETRODIFFUSIONTSUKAMOTO K; AKASAKA Y; KORIE K et al.1975; J. VACUUM SOC. JAP.; JAP.; DA. 1975; VOL. 18; NO 1; PP. 15-22; ABS. ANGL.; BIBL. 14 REF.Article

ANNEALING CHARACTERISTICS AND LATTICE SITE LOCATION OF 40 KEV SN IMPLANTATIONS IN GAAS.FINSTAD TG; ANDERSEN SL; OLSEN T et al.1974; PHYS. STATUS SOLIDI, A; ALLEM.; DA. 1974; VOL. 25; NO 2; PP. 515-521; ABS. ALLEM.; BIBL. 23 REF.Article

INHOMOGENEITES DANS LES MONOCRISTAUX DE GAAS DOPES PAR DES ELEMENTS DU GROUPE IVSOLOV'EVA EV; KARATAEV VV; MIL'VIDSKIJ MG et al.1975; IZVEST. AKAD. NAUK S.S.S.R., NEORG. MATER.; S.S.S.R.; DA. 1975; VOL. 11; NO 10; PP. 1733-1737; BIBL. 6 REF.Article

DEPOT DE FILMS IN2O3:SN SUR GRANDS SUPPORTSYOSHIDA H; FURUBAYASHI H; INOUE Y et al.1976; J. VACUUM SOC. JAP.; JAP.; DA. 1976; VOL. 19; NO 1; PP. 13-19; ABS. ANGL.; BIBL. 17 REF.Article

PREPARATION AND PROPERTIES OF REACTIVELY COSPUTTERED TRANSPARENT CONDUCTING FILMS.LEHMANN HW; WIDMER R.1975; THIN SOLID FILMS; NETHERL.; DA. 1975; VOL. 27; NO 2; PP. 359-368; BIBL. 20 REF.Article

ETUDE DU PROFIL D'IMPURETE DE STRUCTURES EPITAXIQUES DE L'ARSENIURE DE GALLIUMD'YAKONOV LI; LIPATOVA NI; MASLOV VN et al.1976; IZVEST. AKAD. NAUK S.S.S.R., NEORG. MATER.; S.S.S.R.; DA. 1976; VOL. 12; NO 2; PP. 182-185; BIBL. 21 REF.Article

IMPURITY PROFILES OF GAAS EPITAXIAL LAYERS DOPED WITH SN, SI, AND GE GROWN WITH MOLECULAR BEAM EPITAXY.CHO AY.1975; J. APPL. PHYS.; U.S.A.; DA. 1975; VOL. 46; NO 4; PP. 1733-1735; BIBL. 10 REF.Article

L'ETAIN COMME IMPURETE ISOTOPIQUE DANS LE SILICIUM ET LE GERMANIUMSEREGIN PP; NISTIRYUK IV; NASREDINOV FS et al.1975; FIZ. TVERD. TELA; S.S.S.R.; DA. 1975; VOL. 17; NO 8; PP. 2330-2334; BIBL. 18 REF.Article

EFFECTS OF THE GROWTH TEMPERATURE AND SUBSTRATE ORIENTATION ON THE INCORPORATION OF SI, GE AND SN INTO VAPOUR EPITAXIAL GAAS.NAKANISI T; KASIWAGI M.1974; JAP. J. APPL. PHYS.; JAP.; DA. 1974; VOL. 13; NO 3; PP. 484-494; BIBL. 29 REF.Article

TEMPERATURE DEPENDENCE OF THE A BAND OF TL+-TYPE CENTERS IN ALKALI HALIDE CRYSTALS UNDER HIGH PRESSURE.MASUNAGA S; ABE T.1974; J. PHYS. SOC. JAP.; JAP.; DA. 1974; VOL. 37; NO 6; PP. 1540-1544; BIBL. 5 REF.Article

DIRECT COMPARISON OF MOESSBAUER AND CHANNELING STUDIES OF IMPLANTED 119SN IN SILICON SINGLE CRYSTALS.WEYER G; ANDERSEN JU; DEUTCH BI et al.1975; RAD. EFFECTS; G.B.; DA. 1975; VOL. 24; NO 2; PP. 117-121; BIBL. 19 REF.Article

LATTICE SUPERDILATION PHENOMENA IN DOPED GAAS.MULLIN JB; STRAUGHAN BW; DRISCOLL CMH et al.1976; J. APPL. PHYS.; U.S.A.; DA. 1976; VOL. 47; NO 6; PP. 2584-2587; BIBL. 19 REF.Article

COMPORTEMENT DES IMPURETES AG, CU, SN ET NI PENDANT LA CRISTALLISATION DIRIGEE DE INIDENISOV YU N; GALANTSEVA TV; MALOVA NS et al.1975; IZVEST. AKAD. NAUK S.S.S.R., NEORG. MATER.; S.S.S.R.; DA. 1975; VOL. 11; NO 7; PP. 1184-1187; BIBL. 16 REF.Article

DEFECT STRUCTURES OF ION-IMPLANTED ALPHA -TINPETERSEN JW; WEYER G; DAMGAARD S et al.1980; Z. PHYS. B; ISSN 0340-224X; DEU; DA. 1980; VOL. 38; NO 4; PP. 313-326; BIBL. 33 REF.Article

FORMATION DE DEFAUTS DANS LES MONOCRISTAUX DE INAS FORTEMENT DOPES PAR L'ETAINBUBLIK VT; KARATAEV VV; MIL'VIDSKIJ MG et al.1979; KRISTALLOGRAFIJA; ISSN 0023-4761; SUN; DA. 1979; VOL. 24; NO 5; PP. 1084-1087; BIBL. 10 REF.Article

KINETICS OF SURFACE SEGREGATION.LEA C; SEAH MP.1977; PHILOS. MAG.; G.B.; DA. 1977; VOL. 35; NO 1; PP. 213-228; BIBL. 14 REF.Article

CELLULE DE RETRODIFFUSION POUR LE DOPAGE GAZEUX DES COUCHES EPITAXIQUESD'YAKONOV LI; LIPATOVA NI; MASLOV VN et al.1976; IZVEST. AKAD. NAUK S.S.S.R., NEORG. MATER.; S.S.S.R.; DA. 1976; VOL. 12; NO 11; PP. 2047-2048Article

PARTICULARITES DU DOPAGE DE GAAS PAR L'ETAIN LORS DE L'EPITAXIE EN PHASE LIQUIDECHIKICHEV SI.1977; IZVEST. AKAD. NAUK S.S.S.R., NEORG. MATER.; S.S.S.R.; DA. 1977; VOL. 13; NO 10; PP. 1739-1743; BIBL. 17 REF.Article

GAAS, GAP, AND GAAS1-XPX FILMS DEPOSITED BY MOLECULAR BEAM EPITAXY.NAGANUMA M; TAKAHASHI K.1975; PHYS. STATUS SOLIDI, A; ALLEM.; DA. 1975; VOL. 31; NO 1; PP. 187-200; ABS. ALLEM.; BIBL. 20 REF.Article

MOESSBAUER AND CHANNELING STUDIES ON 119TE, 119SB AND 119SN IMPLANTS IN GROUP-IV ELEMENTS.WEYER G; DEUTCH BI; NYLANDSTED LARSEN A et al.1974; J. PHYS., COLLOQ.; FR.; DA. 1974; NO 6; PP. 297-300; ABS. FR.; BIBL. 6 REF.; (CONF. INT. APPL. EFFET MOESSBAUER; BENDOR; 1974)Conference Paper

NATURE DES DEFAUTS DANS LES MONOCRISTAUX D'ARSENIURE DE GALLIUM DOPE PAR L'ETAINANASTAS'EVA NA; BUBLIK VT; OSVENSKIJ VB et al.1978; KRISTALLOGRAFIJA; S.S.S.R.; DA. 1978; VOL. 23; NO 2; PP. 314-319; BIBL. 8 REF.Article

DISTRIBUTION COEFFICIENTS OF TRANSITION METALS AND PB AND SN IN MELT-GROWN ZNS CRYSTALS.SCHARMANN A; SCHWABE D.1977; J. CRYST. GROWTH; NETHERL.; DA. 1977; VOL. 38; NO 1; PP. 8-12; BIBL. 23 REF.Article

CHEMICAL VAPOR DEPOSITION OF TRANSPARENT ELECTRICALLY CONDUCTING LAYERS OF INDIUM OXIDE DOPED WITH TIN.KANE J; SCHWEIZER HP; KERN W et al.1975; THIN SOLID FILMS; NETHERL.; DA. 1975; VOL. 29; NO 1; PP. 155-163; BIBL. 34 REF.Article

SITE-SELECTIVE DOPING OF COMPOUND SEMICONDUCTORS BY ION IMPLANTATION OF RADIOACTIVE NUCLEIWEYER G; PETERSEN JW; DAMGAARD S et al.1980; PHYS. REV. LETT.; ISSN 0031-9007; USA; DA. 1980; VOL. 44; NO 3; PP. 155-157; BIBL. 7 REF.Article

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