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PARTICULARITE DES PROPRIETES LUMINESCENTES DU GANSHAGALOV MD; DRIZHUK AG.1979; ZH. TEH. FIZ.; ISSN 0044-4642; SUN; DA. 1979; VOL. 49; NO 9; PP. 2020-2021; BIBL. 6 REF.Article

PHOTOCONDUCTIVITY ANALYSES IN HIGH RESISTIVITY P TYPE ZINC COMPENSATED SILICON.RABIE S; RUMIN N.1975; CANAD. J. PHYS.; CANADA; DA. 1975; VOL. 53; NO 10; PP. 1003-1011; ABS. FR.; BIBL. 15 REF.Article

PROPRIETES DE COMMUTATION DES DIODES OU SILICIUM A IMPURETE ZN SOUS L'INFLUENCE D'UN PETIT SIGNAL HARMONIQUEAVAK'YANTS GM; TARUMYAN SA.1977; IZVEST. AKAD. NAUK ARM. S.S.R., FIZ.; S.S.S.R.; DA. 1977; VOL. 12; NO 6; PP. 456-461; ABS. ARM. ANGL.; BIBL. 6 REF.Article

PROPRIETES D'UNE PHOTORESISTANCE AU GERMANIUM DOPE AU ZINC ET A L'ANTIMOINE DANS UN REGIME HETERODYNE DE DETECTIONKURBATOV VA; PENIN NA.1972; FIZ. TEKH. POLUPROVODN.; S.S.S.R.; DA. 1972; VOL. 6; NO 5; PP. 903-908; BIBL. 8 REF.Serial Issue

COMPARISON OF ZN-DOPED GAAS LAYERS PREPARED BY LIQUID-PHASE AND VAPOR-PHASE TECHNIQUES, INCLUDING DIFFUSION LENGTHS AND PHOTOLUMINESCENCE.ETTENBERG M; NUESE CJ.1975; J. APPL. PHYS.; U.S.A.; DA. 1975; VOL. 46; NO 8; PP. 3500-3508; BIBL. 45 REF.Article

PROPERTIES OF ZN-DOPED GAN. II. PHOTOCONDUCTIVITY.PANKOVE JI; BERKEYHEISER JE.1974; J. APPL. PHYS.; U.S.A..; DA. 1974; VOL. 45; NO 9; PP. 3892-3895; BIBL. 8 REF.Article

RECOMBINATION IN HIGH-RESISTIVITY N-TYPE ZN-COMPENSATED SILICON.RABIE S; RUMIN N.1974; J. APPL. PHYS.; U.S.A.; DA. 1974; VOL. 45; NO 9; PP. 3988-3995; BIBL. 24 REF.Article

RESISTANCE NEGATIVE DE TYPE N DU N-SI DOPE AU ZINCLEBEDEV AA; SULTANOV NA.1974; FIZ. TEKH. POLUPROVODN.; S.S.S.R.; DA. 1974; VOL. 8; NO 7; PP. 1299-1301; BIBL. 9 REF.Article

ELECTRIC QUADRUPOLE INTERACTION OF RECOIL-IMPLANTED ZINC IN CADMIUM.BARTSCH W; GOLCZEWSKI J; LEITZ W et al.1975; PHYS. LETTERS, A; NETHERL.; DA. 1975; VOL. 50; NO 6; PP. 413-414; BIBL. 12 REF.Article

PHOTOCONDUCTIVITY OF ZN-DOPED GAN.EIDER E; FAGERSTROM PO.1975; J. PHYS. CHEM. SOLIDS; G.B.; DA. 1975; VOL. 36; NO 4; PP. 289-292; BIBL. 23 REF.Article

BLUE ANTI-STOKES ELECTROLUMINESCENCE IN GAN.PANKOVE JI.1975; PHYS. REV. LETTERS; U.S.A.; DA. 1975; VOL. 34; NO 13; PP. 809-812; BIBL. 8 REF.Article

PHOTOCONDUCTIVITE DE INAS N COMPENSEMIKHAJLOVA MP; PENTSOV AV; SLOBODCHIKOV SV et al.1975; FIZ. TEKH. POLUPROVODN.; S.S.S.R.; DA. 1975; VOL. 9; NO 7; PP. 1233-1237; BIBL. 12 REF.Article

CHARACTERIZATION OF TRAPPING KINETICS FROM THE LIFETIME DEPENDANCE OF THERMALLY STIMULATED CONDUCTIVITY SPECTRA.RABIE S; RUMIN N.1975; APPL. PHYS. LETTERS; U.S.A.; DA. 1975; VOL. 27; NO 1; PP. 29-31; BIBL. 18 REF.Article

LUMINESCENCE DU GANPANKOV DZH I; PANKOVE JI; MILLER EA et al.1973; IZVEST. AKAD. NAUK S.S.S.R., SER. FIZ.; S.S.S.R.; DA. 1973; VOL. 37; NO 3; PP. 556-559; BIBL. 7 REF.; (MATER. MEZHDUNAR. KONF. LYUMIN.; LENINGRAD; 1972)Conference Paper

MAGNETORESISTANCE NEGATIVE DANS L'ARSENIURE D'INDIUM COMPENSE DE TYPE NGARYAGDYEV G; EMEL'YANENKO OV; ZOTOVA NV et al.1973; FIZ. TEKH. POLUPROVODN.; S.S.S.R.; DA. 1973; VOL. 7; NO 4; PP. 700-706; BIBL. 14 REF.Serial Issue

PHOTOLUMINESCENCE DE GAAS P DOPE PAR DIFFUSION DE ZINC DANS UN CHAMP MAGNETIQUEZVEREV LP; NEGASHEV SA; KRUZHAEV VV et al.1976; FIZ. TEKH. POLUPROVODN.; S.S.S.R.; DA. 1976; VOL. 10; NO 6; PP. 1025-1029; BIBL. 13 REF.Article

ELECTRICAL TRANSPORT PROPERTIES OF ZN DOPED ZNO.HAGEMARK KI; CHACKA LC.1975; J. SOLID STATE CHEM.; G.B.; DA. 1975; VOL. 15; NO 3; PP. 261-270; BIBL. 38 REF.Article

SPECTRES UV DES MONOCRISTAUX DE ZNS DOPES PAR DES IMPURETES A CARACTERE DONNEURSHALIMOVA KV; MOROZOVA NK; MALOV MM et al.1975; IZVEST. AKAD. NAUK S.S.S.R., NEORG. MATER.; S.S.S.R.; DA. 1975; VOL. 11; NO 4; PP. 617-622; BIBL. 16 REF.Article

THE EFFECT OF HEAT-TREATMENT ON PHOTOLUMINESCENCE EFFICIENCY AND MINORITY CARRIER LIFETIME IN LEC-GAP(ZN,O).CARUSO R; VON NEIDA AR.1974; J. ELECTROCHEM. SOC.; U.S.A.; DA. 1974; VOL. 121; NO 10; PP. 1332-1337; BIBL. 16 REF.Article

DIFFUSION DE L'ETAIN DANS L'ANTIMONIURE DE GALLIUM DE TYPES N ET PUSKOV VA.1974; FIZ. TEKH. POLUPROVODN.; S.S.S.R.; DA. 1974; VOL. 8; NO 12; PP. 2414-2417; BIBL. 6 REF.Article

PHOTOCONDUCTIVITE DU PHOSPHURE DE GALLIUM COMPENSEIVASHCHENKO AI; SAMORUKOV BE; SLOBODCHIKOV SV et al.1974; FIZ. TEKH. POLUPROVODN.; S.S.S.R.; DA. 1974; VOL. 8; NO 10; PP. 1960-1968; BIBL. 18 REF.Article

DEGRADATION IN SHORT WAVELENGTH (ALGA)AS LIGHT-EMITTING DIODES.LADANY I; KRESSEL H.1978; ELECTRON. LETTERS; GBR; DA. 1978; VOL. 14; NO 13; PP. 407-409; BIBL. 9 REF.Article

EFFET DE LA VARIATION DES PARAMETRES CARACTERISTIQUES DES ONDES DE RECOMBINAISON DANS LA DEFORMATION LOCALE DU RESEAU CRISTALLIN DU SILICIUM COMPENSEKORNILOV BV; PRIVEZENTSEV VV.1976; FIZ. TEKH. POLUPROVODN.; S.S.S.R.; DA. 1976; VOL. 10; NO 1; PP. 99-103; BIBL. 19 REF.Article

CALCULATIONS AND EFFECTS OF INHOMOGENEITY IN COMPENSATED PHOTOCONDUCTORS.RABIE SA; RUMIN NC.1976; SOLID-STATE ELECTRON.; G.B.; DA. 1976; VOL. 19; NO 5; PP. 357-364; BIBL. 36 REF.Article

OSCILLATIONS DE LA PHOTOCONDUCTIVITE D'IMPURETES DE GE P DANS LES CHAMPS ELECTRIQUE ET MAGNETIQUEMOROZOVA VA.1974; FIZ. TEKH. POLUPROVODN.; S.S.S.R.; DA. 1974; VOL. 8; NO 9; PP. 1756-1758; BIBL. 15 REF.Article

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