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Results 1 to 25 of 87996

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SUBTHRESHOLD BEHAVIOR OF UNIFORMLY AND NONUNIFORMLY DOPED LONG-CHANNEL MOSFETBREWS JR.1979; I.E.E.E. TRANS. ELECTRON DEVICES; USA; DA. 1979; VOL. 26; NO 9; PP. 1282-1291; BIBL. 22 REF.Article

THE EFFECT OF DOPANT DISTRIBUTION AND BUILT-IN ELECTRIC FIELD ON THE TRANSIT TIME OF A TRANSISTORCHOWDHURY NKD; GHOSH K; BISWAS TB et al.1980; SOLID-STATE ELECTRON.; GBR; DA. 1980; VOL. 23; NO 3; PP. 293-295; BIBL. 10 REF.Article

COMPARISON OF THAI'S THEORY WITH EXPERIMENTAL BORON DOPING PROFILES IN SILICON, DIFFUSED FROM BORON NITRIDE SOURCESFROHMADER KP; BAUMBAUER L.1980; SOLID-STATE ELECTRON.; ISSN 0038-1101; GBR; DA. 1980; VOL. 23; NO 12; PP. 1263-1265; BIBL. 17 REF.Article

THE INFLUENCE OF HEAVY DOPING EFFECTS ON THE REVERSE RECOVERY STORAGE TIME OF A DIODEJAIN SC; VAN OVERSTRAETEN RJ.1983; SOLID-STATE ELECTRONICS; ISSN 0038-1101; GBR; DA. 1983; VOL. 26; NO 5; PP. 473-481; BIBL. 25 REF.Article

AG PHOTODOPING OF AMORPHOUS CHALCOGENIDESLIS SA; LAVINE JM.1983; APPLIED PHYSICS LETTERS; ISSN 0003-6951; USA; DA. 1983; VOL. 42; NO 8; PP. 675-677; BIBL. 5 REF.Article

LE DOPAGE ET SES EFFETS CARDIO-VASCULAIRESMISEREZ P.1981; REV. PRAT.; ISSN 0035-2640; FRA; DA. 1981; VOL. 31; NO 25; PP. 1827-1831; ABS. ENGArticle

SIMULATION OF DOPING PROCESSESRYSSEL H; HABERGER K; HOFFMANN K et al.1980; IEEE TRANS. ELECTRON. DEVICES; ISSN 0018-9383; USA; DA. 1980; VOL. 27; NO 8; PP. 1484-1492; BIBL. 29 REF.Article

DOPINGANALYTIK-ENTWICKLUNG UND ENTWICKLUNGSTENDENZEN = ANALYSE DU DOPING. DEVELOPPEMENT ET TENDANCES DU DEVELOPPEMENTDONIKE M.1980; THERAPIEWOCHE; DEU; DA. 1980; VOL. 30; NO 18; PP. 3156-3163; (5 P.); BIBL. 17 REF.Article

LE DOPING DANS LES COMPETITIONS SPORTIVES = THE ABUSE OF DRUGS IN SPORTING EVENTSCHAUSONNET BOUNEAU FRANCYNE.1981; ; FRA; DA. 1981; 93 P.; 30 CM+ERR.; BIBL. 21 P.; TH.: PHARM./TOULOUSE 3/1981/11Thesis

ESPERIENZA ITALIANA SUL CONTROLLO ANTIDOPING NELLO SPORT = L'EXPERIENCE ITALIENNE DANS LE CONTROLE ANTIDOPAGE AU COURS DU SPORTTUCCIMEI G; BARBIERI F.1979; MED. DELLO SPORT; ITA; DA. 1979; VOL. 32; NO 4; PP. 241-248; BIBL. 8 REF.Article

ACETODOPING DURING THE DEPOSITION OF EPITAXIAL SILICON LAYERS FROM THE GAS PHASE. (I): AUTODOPING FROM THE GAS PHASEKUEHNE H.1982; CRYST. RES. TECHNOL. (1979); ISSN 0232-1300; DDR; DA. 1982; VOL. 17; NO 9; PP. 1097-1104; ABS. GER; BIBL. 7 REF.Article

CUTOFF FREQUENCY OF A GRADED CHANNEL F.E.TMALHI SDS; SALAMA CAT.1980; ELECTRON. LETTERS; GBR; DA. 1980; VOL. 16; NO 7; PP. 261-263; BIBL. 10 REF.Article

A SINGLE STEP SELECTIVE IMPLANTATION TECHNOLOGY FOR MULTIPLY DOPED LAYERS USING PROXIMITY ANNEALINGDUNCAN WM; WILLIAMS RE.1981; ELECTRON DEVICE LETT.; ISSN 0193-8576; USA; DA. 1981; VOL. 2; NO 12; PP. 309-311; BIBL. 4 REF.Article

LATTICE INCORPORATION OF N-TYPE DOPANTS IN GAASRAI AK; BHATTACHARYA RS; PRONKO PP et al.1982; APPLIED PHYSICS LETTERS; ISSN 0003-6951; USA; DA. 1982; VOL. 41; NO 11; PP. 1086-1088; BIBL. 7 REF.Article

ON CALCULATIONS OF MULTICOMPONENT SYSTEM COMPOSITION IN LIGHTLY DOPED SEMICONDUCTORSSHCHUROVA LY.1982; SOLID STATE COMMUNICATIONS; ISSN 0038-1098; USA; DA. 1982; VOL. 44; NO 8; PP. 1261-1264; BIBL. 5 REF.Article

HEAVILY DOPED SEMICONDUCTOR LASERSCOPELAND JA.1981; IEEE J. QUANTUM ELECTRON.; ISSN 0018-9197; USA; DA. 1981; VOL. 17; NO 11; PP. 2187-2190; BIBL. 10 REF.Article

PARTICULARITE DES PROPRIETES LUMINESCENTES DU GANSHAGALOV MD; DRIZHUK AG.1979; ZH. TEH. FIZ.; ISSN 0044-4642; SUN; DA. 1979; VOL. 49; NO 9; PP. 2020-2021; BIBL. 6 REF.Article

TEMPERATURE PROFILE INSIDE THE ACTIVE LAYER OF A GUNN DIODE.JANARDHANAN P; MAHAPATRA S.1976; INDIAN J. TECHNOL.; INDIA; DA. 1976; VOL. 14; NO 11; PP. 579-581; BIBL. 4 REF.Article

A VERSATILE BORON DIFFUSION PROCESS.STACH J; KRUEST J.1976; SOLID STATE TECHNOL.; U.S.A.; DA. 1976; VOL. 19; NO 10; PP. 60-67 (3P.); BIBL. 10 REF.Article

RADIATIVE DECAY TIMES AND KINETICS OF THE LUMINESCENCE FROM KI:SN2+LE SI DANG; JACOBS PWM; SCHMITT K et al.1982; CHEM. PHYS.; ISSN 0301-0104; NLD; DA. 1982; VOL. 66; NO 1-2; PP. 51-55; BIBL. 14 REF.Article

METHODE OPTIQUE DE DETERMINATION DES PARAMETRES DES DOMAINES FORTEMENT DOPES DES STRUCTURES P+-I-N+GRODNENSKIJ IM; SOKOLOV YU F; CHERNYKH IN et al.1982; RADIOTEKH. I ELEKTRON.; SUN; DA. 1982; VOL. 27; NO 3; PP. 583-585; BIBL. 4 REF.Article

MODELLING OF DOUBLE DIFFUSED TRANSISTORS: DOUBLE EXPONENTIAL DISTRIBUTION OF IMPURITY PROFILESRUSTAGI SC; CHATTOPADHYAYA SK.1979; INDIAN J. PURE APPL. PHYS.; ISSN 0019-5596; IND; DA. 1979; VOL. 17; NO 3; PP. 166-170; BIBL. 7 REF.Article

CONDUCTIVITE ELECTRIQUE DU DIAMANT DE TYPE P FORTEMENT DOPEVISHNEVSKIJ AS; GONTAR AG; TORISHNIJ VI et al.1981; FIZ. TEH. POLUPROVODN.; ISSN 0015-3222; SUN; DA. 1981; VOL. 15; NO 6; PP. 1145-1149; BIBL. 10 REF.Article

ETUDE DE LA NATURE DES CENTRES ACCEPTEURS A NIVEAUX PEU PROFONDS DANS LES MONOCRISTAUX DE PHOSPHURE D'INDIUM DOPESKOLESNIK LI; LOSHINSKIJ AM; NASHEL'SKIJ A YA et al.1981; IZV. AKAD. NAUK SSSR, NEORG. MATER.; ISSN 0002-337X; SUN; DA. 1981; VOL. 17; NO 12; PP. 2117-2121; BIBL. 7 REF.Article

RECHERCHE D'UN ETAT NUTRITIONNEL OPTIMAL DE L'ATHLETE ET DOPAGE.GOUNELLE DE PONTANEL H.1977; BULL. ACAD. NATION. MED.; FR.; DA. 1977; VOL. 161; NO 5; PP. 386-387Article

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