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PROFIL DE DOPAGE OPTIMAL D'UNE DIODE DE TRANSIT A INJECTION (DIODE BARITT)PAVLOV GP.1981; IZV. VYSS. UCEBN. ZAVED., RADIOELEKTRON.; ISSN 0021-3470; SUN; DA. 1981; VOL. 24; NO 7; PP. 64-68; BIBL. 5 REF.Article

MODELLING OF DOUBLE DIFFUSED TRANSISTORS: DOUBLE EXPONENTIAL DISTRIBUTION OF IMPURITY PROFILESRUSTAGI SC; CHATTOPADHYAYA SK.1979; INDIAN J. PURE APPL. PHYS.; ISSN 0019-5596; IND; DA. 1979; VOL. 17; NO 3; PP. 166-170; BIBL. 7 REF.Article

A UNIFIED METHOD FOR FINDING APPROXIMATIONS TO IMPURITY PROFILES FROM A TWO-STEP DIFFUSION PROCESSWAY SEEN WANG.1983; PROCEEDINGS OF THE IEEE; ISSN 0018-9219; USA; DA. 1983; VOL. 71; NO 1; PP. 179-180; BIBL. 7 REF.Article

ON THE MEASUREMENT PRINCIPLES OF SEMICONDUCTOR DOPANT PROFILES.AMBROZY A.1976; PERIOD. POLYTECH., ELECTR. ENGNG; HONGR.; DA. 1976; VOL. 20; NO 2; PP. 141-155; BIBL. 26 REF.Article

IMPURITY PROFILE ON GAP DIODES IN THE NEIGHBOURHOOD OF A P-N JUNCTIONOELGART G; ARNOLD G.1981; PHYS. STATUS SOLIDI (A), APPL. RES.; ISSN 0031-8965; DDR; DA. 1981; VOL. 65; NO 2; PP. 609-618; ABS. GER; BIBL. 19 REF.Article

CURRENT GAIN OF HIGH-LOW JUNCTION EMITTER BIPOLAR TRANSISTOR STRUCTURE WITH UNIFORMLY DOPED PROFILESCHING YUAN WU.1980; SOLID-STATE ELECTRON.; ISSN 0038-1101; GBR; DA. 1980; VOL. 23; NO 12; PP. 1215-1221; BIBL. 19 REF.Article

CURRENT GAIN OF THE BIPOLAR TRANSISTORCHING YUAN WU.1980; J. APPL. PHYS.; ISSN 0021-8979; USA; DA. 1980; VOL. 5; NO 9; PP. 5030-5037; BIBL. 11 REF.Article

LIGHT GENERATION IN DIFFUSED GAP LIGHT EMITTING DIODES (LEDS)THOMAS BW; REES GJ; WIGHT DR et al.1980; SOLID-STATE ELECTRON.; GBR; DA. 1980; VOL. 23; NO 6; PP. 611-619; BIBL. 21 REF.Article

ETUDE THEORIQUE DES GENERATEURS A DIODES A TRANSFERT ELECTRONIQUE INTER-VALLEESPORESH SB; TAGER AS.1978; RADIOTEKH. I ELEKTRON.; S.S.S.R.; DA. 1978; VOL. 23; NO 4; PP. 834-840; BIBL. 13 REF.Article

RESOLUTION OF SPREADING-RESISTANCE MEASUREMENTS ON SHALLOW LAYERSABBASI SA; BRUNNSCHWEILER A.1979; ELECTRON. LETTERS; GBR; DA. 1979; VOL. 15; NO 10; PP. 290-292; BIBL. 4 REF.Article

HYPERABRUPT EPITAXIAL TUNING DIODES.JACKSON DM JR; DEMASSA TA.1977; SOLID-STATE ELECTRON.; G.B.; DA. 1977; VOL. 20; NO 6; PP. 485-490; BIBL. 2 REF.Article

IDEAL FET DOPING PROFILETEMPLE VAK.1983; IEEE TRANSACTIONS ON ELECTRON DEVICES; ISSN 0018-9383; USA; DA. 1983; VOL. 30; NO 6; PP. 619-626; BIBL. 8 REF.Article

BASE COMPONENT OF GAIN AND DELAY TIME IN BASE-IMPLANTED BIPOLAR TRANSISTORSELMASRY MI; ROULSTON DJ.1981; SOLID-STATE ELECTRON.; ISSN 0038-1101; GBR; DA. 1981; VOL. 24; NO 4; PP. 371-375; BIBL. 15 REF.Article

CARRIER PROFILING OF INP.LILE DL; COLLINS DA.1978; ELECTRON. LETTERS; GBR; DA. 1978; VOL. 14; NO 15; PP. 457-458; BIBL. 4 REF.Article

INFLUENCE OF AN IMPURITY PROFILE ON THE DETERMINATION OF INTERFACE STATESFELTIL H.1978; SOLID-STATE ELECTRON.; GBR; DA. 1978; VOL. 21; NO 10; PP. 1227-1230; BIBL. 15 REF.Article

LOW-NOISE GAAS FET'S PREPARED BY ION IMPLANTATIONHIGGINS JA; KUVAS RL; EISEN FH et al.1978; I.E.E.E. TRANS. ELECTRON DEVICES; USA; DA. 1978; VOL. 25; NO 6; PP. 587-596; BIBL. 24 REF.Article

NEW CONTACT RESISTANCE PROFILING METHOD FOR THE ASSESSMENT OF III-V ALLOY MULTILAYER STRUCTURES.GOODFELLOW RC; CARTER AC; DAVIS R et al.1978; ELECTRON. LETTERS; G.B.; DA. 1978; VOL. 14; NO 11; PP. 328-330; BIBL. 3 REF.Article

I.V. IMPURITY PROFILING WITH A SCHOTTKY BARRIER.SHANNON JM.1977; APPL. PHYS. LETTERS; U.S.A.; DA. 1977; VOL. 31; NO 10; PP. 707-709; BIBL. 6 REF.Article

THE EFFECT OF DOPANT DISTRIBUTION AND BUILT-IN ELECTRIC FIELD ON THE TRANSIT TIME OF A TRANSISTORCHOWDHURY NKD; GHOSH K; BISWAS TB et al.1980; SOLID-STATE ELECTRON.; GBR; DA. 1980; VOL. 23; NO 3; PP. 293-295; BIBL. 10 REF.Article

AN INVESTIGATION OF THE VOLTAGE SUSTAINED BY EPITAXIAL BIPOLAR TRANSISTORS IN CURRENT MODE SECOND BREAKDOWNDUNN I; NUTTALL KI.1978; INTERNATION. J. ELECTRON.; GBR; DA. 1978; VOL. 45; NO 4; PP. 353-372; BIBL. 14 REF.Article

CURRENT AND BASE TRANSIT-TIME RELATIONS IN NORMAL AND INVERTED (IIL) BIPOLAR TRANSISTORS.ELSAID MH; ROULSTON DJ; WATT LAK et al.1977; I.E.E.E. TRANS. ELECTRON DEVICES; U.S.A.; DA. 1977; VOL. 24; NO 6; PP. 761-763; BIBL. 3 REF.Article

ERRORS IN THRESHOLD-VOLTAGE MEASUREMENTS OF MOS TRANSISTORS FOR DOPANT-PROFILE DETERMINATIONSMIN HWA CHI; CHENMING HU.1981; SOLID-STATE ELECTRON.; ISSN 0038-1101; GBR; DA. 1981; VOL. 24; NO 4; PP. 313-316; BIBL. 7 REF.Article

THE ASYMMETRICAL FIELD-CONTROLLED THYRISTORJAYANT BALIGA B.1980; I.E.E.E. TRANS. ELECTRON DEVICES; USA; DA. 1980; VOL. 27; NO 7; PP. 1262-1268; BIBL. 10 REF.Article

SUR LA METHODE DE DETERMINATION DE LA VALEUR ET DU PROFIL DU DOPAGE DU SUBSTRAT A PARTIR DES CARACTERISTIQUES DES TRANSISTORS METAL-DIELECTRIQUE-SEMICONDUCTEURGUZEV AA; GURTOV VA; FRANTSUZOV AA et al.1980; MIKROELEKTRONIKA; SUN; DA. 1980; VOL. 9; NO 4; PP. 340-346; BIBL. 9 REF.Article

OPTIMIZATION OF IMPLANTED BASE PROFILES FOR BIPOLAR MICROWAVE TRANSISTORS.RYSSEL H; WEIDLICH H; KRANZ H et al.1978; SIEMENS FORSCH.-U. ENTWICKL.-BER.; DEU; DA. 1978; VOL. 7; NO 4; PP. 175-180; BIBL. 22 REF.Article

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