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Novel hot-electron effects in the channel of MOSFET's observed by capacitance measurementsSCHMITT-LANDSIEDEL, D; DORDA, G.I.E.E.E. transactions on electron devices. 1985, Vol 32, Num 7, pp 1294-1301, issn 0018-9383Article

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Hot-electron and hole-emission effects in short n-channel MOSFET'sHOFMANN, K. R; WERNER, C; WEBER, W et al.I.E.E.E. transactions on electron devices. 1985, Vol 32, Num 3, pp 691-699, issn 0018-9383Article

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Universal behaviour of the electronic transportDORDA, G.Physica scripta. T. 1992, Vol 45, pp 297-299, issn 0281-1847Conference Paper

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