kw.\*:("DOUBLE GRILLE")
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COMPARISON OF SINGLE- AND DUAL-GATE FET FREQUENCY DOUBLERSGOPINATH A; SEEDS AJ; RANKIN JB et al.1982; IEEE TRANS. MICROWAVE THEORY TECH.; ISSN 0018-9480; USA; DA. 1982; VOL. 30; NO 6; PP. 919-920; BIBL. 5 REF.Article
LE TRANSISTOR A EFFET DE CHAMP A DOUBLE GRILLE = DOUBLE GATE FIELD EFFECT TRANSISTORARDUIN JEAN PHILIPPE.1981; ; FRA; DA. 1981; 84 P.-PL.; 30 CM + ANNEXES 41 P.; ABS. ENG; BIBL. 63 REF.; TH. 3E CYCLE: PHYS./PARIS 6/1981Thesis
100 MHZ TO 17 GHZ DUAL-GATE VARIABLE-GAIN AMPLIFIERMAMODALY N; QUENTIN P; DUEME P et al.1982; IEEE TRANS. MICROWAVE THEORY TECH.; ISSN 0018-9480; USA; DA. 1982; VOL. 30; NO 6; PP. 918-919; BIBL. 3 REF.Article
Parametric studies of diagonal-on-square double layer grids = Parameterstudien ueber ebene aus Halboktaedern zusammengesetzte Raumstabwerke mit orthogonalen Stabzuegen im Ober-und Untergurt = Etudes paramétriques de grilles à double niveau du type diagonal / orthogonalSOARE, M.V.Der Stahlbau. 1999, Vol 68, Num 2, pp 165-172, issn 0038-9145Article
MOS PROCESSES1978; I.E.E.E. TRANS. CONSUMER ELECTRON.; USA; DA. 1978; VOL. 24; NO 2; PP. 155-167Article
CONTRIBUTION A L'ETUDE DES TRANSISTORS MOS. STRUCTURES A DOUBLE GRILLE ET STRUCTURES DE PUISSANCE A CANAL VERTICAL.ZAMORANO M.1977; ; S.L.; DA. 1977; PP. 1-202; BIBL. 7 P.; (THESE DOCT. 3E. CYCLE, SPEC. ELECTRON. ELECTROTECH. AUTOM., MENTION MATER. COMPOSANTS ACTIFS; PAUL SABATIER TOULOUSE)Thesis
PROPRIETES EN HAUTES FREQUENCES DES TRANSISTORS MOS A CANAL COURT. ANALYSE THEORIQUE DES PROPRIETES DE LA ZONE ACTIVEROSSEL P; GUEGAN G; MARTINOT H et al.1979; REV. PHYS. APPL.; FRA; DA. 1979; VOL. 14; NO 8; PP. 763-773; ABS. ENG; BIBL. 36 REF.Article
Fabrication of integrated double-gated field emission microsource and its electrical characteristicsLEE, Y. J; KANG, S. H; CHUN, K et al.Microelectronic engineering. 1998, Vol 41-42, pp 449-452, issn 0167-9317Conference Paper
Modeling of ultrathin double-gate nMOS/SOI transistorsFRANCIS, P; TERAO, A; FLANDRE, D et al.I.E.E.E. transactions on electron devices. 1994, Vol 41, Num 5, pp 715-720, issn 0018-9383Article
Analytical surface potential expression for thin-film double-gate SOI MOSFETsSUZUKI, K; TANAKA, T; TOSAKA, Y et al.Solid-state electronics. 1994, Vol 37, Num 2, pp 327-332, issn 0038-1101Article
SiO2/native-oxide double-gate InSb MOSFETsTAKAHASHI, T; SUGIURA, O; WATANABE, I et al.Electronics Letters. 1985, Vol 21, Num 12, pp 545-547, issn 0013-5194Article