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STATIC MODEL OF DH LASERMACHAC J.1983; IEE PROCEEDINGS. PART I. SOLID-STATE AND ELECTRON DEVICES; ISSN 0143-7100; GBR; DA. 1983; VOL. 130; NO 2; PP. 61-66; BIBL. 19 REF.Article

SMALL SIGNAL MODULATION OF DH LASER DIODES: EFFECT OF THE JUNCTION CAPACITANCEDUMANT JM; GUILLAUSSEAU Y; MONERIE M et al.1980; OPT. COMMUNIC.; NLD; DA. 1980; VOL. 33; NO 2; PP. 188-192; BIBL. 16 REF.Article

SEMICONDUCTOR LASERS WITH A THIN ACTIVE LAYER (>0.1 MU M) FOR OPTICAL COMMUNICATIONS.CHINONE N; NAKASHIMA H; IKUSHIMA I et al.1978; APPL. OPT.; U.S.A.; DA. 1978; VOL. 17; NO 2; PP. 311-315; BIBL. 16 REF.Article

CORRELATION BETWEEN THE OPTICAL OUTPUT CHARACTERISTICS AND THE TIME-DEPENDENT BEHAVIOUR OF SEMICONDUCTOR LASERS.KRUMPHOLZ O; GOTTSMANN H.1977; ELECTRON. LETTERS; G.B.; DA. 1977; VOL. 13; NO 12; PP. 364-365; BIBL. 12 REF.Article

STRIPE-GEOMETRY D.H. LASERS WITH LINEAR OUTPUT/CURRENT CHARACTERISTICS.DE WAARD PJ.1977; ELECTRON. LETTERS; G.B.; DA. 1977; VOL. 13; NO 14; PP. 400-401; BIBL. 3 REF.Article

DETERMINATION OF THE LASING THRESHOLD IN STRIPE-GEOMETRY DOUBLE HETEROSTRUCTURE JUNCTION LASERS.PAOLI TL.1976; APPL. PHYS. LETTERS; U.S.A.; DA. 1976; VOL. 29; NO 10; PP. 673-675; BIBL. 13 REF.Article

IMPROVED SENSITIVITY OF JUNCTION CAPACITANCE METHOD SUITABLE FOR THE TRAP EVALUATION IN STRIPE GEOMETRY DH LASERS.TAKANASHI Y; HORIKOSHI Y.1976; JAP. J. APPL. PHYS.; JAP.; DA. 1976; VOL. 15; NO 6; PP. 1171-1172; BIBL. 4 REF.Article

HIGH-FREQUENCY IMPEDANCE OF PROTON-BOMBARDED INJECTION LASERSHAKKI BW; HOLBROOK WR; GAW CA et al.1983; BELL SYSTEM TECHNICAL JOURNAL; ISSN 0005-8580; USA; DA. 1983; VOL. 62; NO 2; PART. 1; PP. 463-475; BIBL. 25 REF.Article

FIRST DERIVATIVES OF THE I-V CHARACTERISTICS OF BURIED STRIPE GEOMETRY DH INJECTION LASERSDMOCHOWSKI JE; DOBACZEWSKI LJ.1980; ARCH. ELEKTRON-UEBERTRAG.-TECH.; DEU; DA. 1980; VOL. 34; NO 4; PP. 181-182; ABS. GER; BIBL. 9 REF.Article

ACTIVE Q-SWITCHING OF LATERAL FIELD COUPLING CONTROL D.H. LASERITO H; GEN EI K; INABA H et al.1980; ELECTRON. LETT.; ISSN 0013-5194; GBR; DA. 1980; VOL. 16; NO 22; PP. 846-847; BIBL. 8 REF.Article

A NEW D.H. LASER CONFIGURATION WITH PASSIVE TRANSVERSE FIELD CONFINEMENT.ROZZI TE; VAN HEUVEN JHC; IN'T VELD GH et al.1978; ELECTRON. LETTERS; GBR; DA. 1978; VOL. 14; NO 4; PP. 87-88; BIBL. 4 REF.Article

LINEAR LIGHT OUTPUT POWER DEPENDENCE ON EFFECTIVE GAIN WIDTH IN STRIPE GEOMETRY (AL, GA) AS DH LASERS.UENO M.1977; JAP. J. APPL. PHYS.; JAP.; DA. 1977; VOL. 16; NO 8; PP. 1399-1402; BIBL. 11 REF.Article

DERIVATIVE MEASUREMENTS OF THE CURRENT-VOLTAGE CHARACTERISTICS OF DOUBLE-HETEROSTRUCTURE INJECTION LASERS.BARNES PA; PAOLI TL.1976; I.E.E.E. J. QUANTUM ELECTRON.; U.S.A.; DA. 1976; VOL. 12; NO 10; PP. 633-639; BIBL. 14 REF.Article

LOW-THRESHOLD DOUBLE HETEROJUNCTION ALGAAS/GAAS LASER DIODES: THEORY AND EXPERIMENT.KRESSEL H; ETTENBERG M.1976; J. APPL. PHYS.; U.S.A.; DA. 1976; VOL. 47; NO 8; PP. 3533-3537; BIBL. 15 REF.Article

THEORY OF THE DOUBLE HETEROSTRUCTURE LASER. I. NUMERICAL SOLUTION OF THE CHARGE TRANSPORT EQUATIONS.SHORE KA; ADAMS MJ.1976; OPT. QUANTUM ELECTRON.; G.B.; DA. 1976; VOL. 8; NO 4; PP. 269-278; BIBL. 21 REF.Article

SELECTIVE AND UNIFORM LASER-INDUCED FAILURE OF ANTIREFLECTION -COATED LINBO3 SURFACESSEITEL SC; FRANCK JB; MARRS CD et al.1983; IEEE JOURNAL OF QUANTUM ELECTRONICS; ISSN 0018-9197; USA; DA. 1983; VOL. 19; NO 3; PP. 475-479; BIBL. 11 REF.Article

PHASE SENSITIVITY AND LINEWIDTH NARROWING IN A FOX-SMITH CONFIGURED SEMICONDUCTOR LASERPETUCHOWSKI SJ; MILSS RO; DANDRIDGE A et al.1982; APPL. PHYS. LETT.; ISSN 0003-6951; USA; DA. 1982; VOL. 40; NO 4; PP. 302-304; BIBL. 13 REF.Article

CURRENT LIMITATION FOR THE FUNDAMENTAL TRANSVERSE MODE OPERATION OF BURIED HETEROSTRUCTURE LASERSHARTH W; CLAASSEN M; GROTHE H et al.1978; ARCH. ELEKTRON. UBERTRAG.-TECH.; DEU; DA. 1978; VOL. 32; NO 4; PP. 137-139; ABS. GER; BIBL. 13 REF.Article

DESIGN CURVES FOR DOUBLE-HETEROJUNCTION LASER DIODES.BUTLER JK; KRESSEL H.1977; R.C.A. REV.; U.S.A.; DA. 1977; VOL. 38; NO 4; PP. 542-558; BIBL. 7 REF.Article

IMPROVED HETEROSTRUCTURE-LASER LIGHT-OUTPUT LINEARITY BY ANTIREFLECTIVE COATING.MILLER RC; JOYCE WB.1977; APPL. PHYS. LETTERS; U.S.A.; DA. 1977; VOL. 31; NO 11; PP. 764-765Article

INITIAL DEGRADATION MODE OF LONG-LIFE (GAAL) AS-GAAS LASERS.HWANG CJ.1977; APPL. PHYS. LETTERS; U.S.A.; DA. 1977; VOL. 30; NO 3; PP. 167-169; BIBL. 28 REF.Article

TWO-DIMENSIONAL ANALYSIS OF THE GAAS DOUBLE HETERO STRIPE-GEOMETRY LASER.ROZZI T; ITOH T; GRUN L et al.1977; RADIO SCI.; U.S.A.; DA. 1977; VOL. 12; NO 4; PP. 543-549; BIBL. 7 REF.Article

OPTICAL DISTORTION DUE TO GAS-DYNAMIC MOTION IN A PHOTOLYTICALLY PUMPED CYLINDRICAL LASER CAVITYRILEY ME; RICE JK.1983; IEEE JOURNAL OF QUANTUM ELECTRONICS; ISSN 0018-9197; USA; DA. 1983; VOL. 19; NO 3; PP. 401-409; BIBL. 13 REF.Article

CURRENT-CROWDED CARRIER CONFINEMENT IN DOUBLE-HETEROSTRUCTURE LASERSJOYCE WB.1980; J. APPL. PHYS.; ISSN 0021-8979; USA; DA. 1980; VOL. 51; NO 5; PP. 2394-2401; BIBL. 35 REF.Article

LASER-ALLOYED STRIPE-GEOMETRY DH LASERSSALATHE R; BADERTSCHER G; LUTHY W et al.1979; APPL. PHYS. LETT.; ISSN 0003-6951; USA; DA. 1979; VOL. 35; NO 6; PP. 439-441; BIBL. 10 REF.Article

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