CIRCULAR MAGNETIZATION OF NICKEL AND FERRITE TWISTED TUBULAR POLYCRYSTALLINE SAMPLES IN AXIAL MAGNETIC FIELDS.CECCHI GC; DRIGO A; RONCONI F et al.1977; J. APPL. PHYS.; U.S.A.; DA. 1977; VOL. 48; NO 1; PP. 369-372; BIBL. 7 REF.Article

Anomalous damage in N⁺ implanted InAsAYDINLI, A; DRIGO, A. V.Radiation effects and defects in solids. 1990, Vol 113, Num 4, pp 269-275, issn 1042-0150, 7 p.Article

Radon-222 measurements in drinking waterCAPRA, E; DRIGO, A; MENIN, A et al.Radiation protection dosimetry. 1991, Vol 35, Num 4, pp 269-270, issn 0144-8420Article

Elastic distortion field in single layer heterostructures in the presence of misfit dislocationsMAZZER, M; CARNERA, A; DRIGO, A. V et al.Journal of applied physics. 1990, Vol 68, Num 2, pp 531-539, issn 0021-8979Article

Structural characterization and surface lattice strain determination of ZnS/GaAs heterostructures grown by metalorganic vapour phase epitaxyLEO, G; LAZZARINI, L; LOVERGINE, N et al.Journal of crystal growth. 1997, Vol 173, Num 3-4, pp 277-284, issn 0022-0248Article

Ingested soil as a source of ¹³⁷Cs to ruminantsBELLI, M; BLASI, M; CAPRA, E et al.Science of the total environment. 1993, Vol 136, Num 3, pp 243-249, issn 0048-9697Article

Mechanisms of strain relaxation in III-V semiconductor heterostructuresMAZZER, M; ROMANATO, F; DRIGO, A. V et al.Journal of crystal growth. 1993, Vol 126, Num 1, pp 125-132, issn 0022-0248Conference Paper

Synthesis of chromium silicide with laser pulsesD'ANNA, E; DRIGO, A. V; LEGGIERI, G et al.Applied physics. A, Solids and surfaces. 1990, Vol 50, Num 4, pp 411-415, issn 0721-7250Article

Transfer of Chernobyl fall-out caesium radioisotopes in the cow food chainBELLI, M; DRIGO, A; MENEGON, S et al.Science of the total environment. 1989, Vol 85, pp 169-177, issn 0048-9697, 9 p.Article

Silicon loss during TiSi₂ formationCOHEN, C; NIPOTI, R; SIEJKA, J et al.Journal of applied physics. 1987, Vol 61, Num 11, pp 5187-5189, issn 0021-8979Article

Dose rate effects on the dynamic annealing mechanism in P⁺-implanted siliconBERTI, M; DRIGO, A. V; LULLI, G et al.Physica status solidi. A. Applied research. 1986, Vol 97, Num 1, pp 77-85, issn 0031-8965Article

Recent developments of the RBS technique for the analysis of semiconductor nanostructuresBERTI, M; DRIGO, A. V; TORZO, G et al.Microscopy microanalysis microstructures (Les Ulis). 1995, Vol 6, Num 5-6, pp 505-511, issn 1154-2799Conference Paper

Composition and structure of Si-Ge layers produced by ion implantation and laser meltingBERTI, M; MAZZI, G; CALCAGNILE, L et al.Journal of materials research. 1991, Vol 6, Num 10, pp 2120-2126, issn 0884-2914Article

Explosive crystallization of dilute amorphous Si-Ge alloysAYDINLI, A; BERTI, M; DRIGO, A. V et al.Journal of applied physics. 1988, Vol 64, Num 6, pp 3301-3303, issn 0021-8979Article

Transformation to amorphous state of metals by ion implantation: P in Ni = Transformation à l'état amorphe de métaux par implantation ionique: P dans NiCOHEN, C; BENYAGOUB, A; BERNAS, H et al.Physical review. B, Condensed matter. 1985, Vol 31, Num 1, pp 5-14, issn 0163-1829Article

Production and characterization of quantum nanostructures of epitaxial semiconductorsBERTI, M; DRIGO, A. V; MAZZER, M et al.Journal de physique. IV. 1995, Vol 5, Num 5, pp C5.1157-C5.1163, issn 1155-4339, 2Conference Paper

Radiation damage evolution and its relation with dopant distribution during self-annealing implantation of As in siliconLULLI, G; MERLI, P. G; MIGLIORI, A et al.Journal of materials research. 1992, Vol 7, Num 6, pp 1413-1422, issn 0884-2914Article

Strain effect on interatomic distances in InGaAs/InP epitaxial layersTORMEN, M; DE SALVADOR, D; BOSCHERINI, F et al.Applied surface science. 2002, Vol 188, Num 1-2, pp 85-89, issn 0169-4332Conference Paper

Investigation by synchrotron radiation X-ray topography of lattice tilt formation in partially released InGaAs/GaAs compositionally graded layersFERRARI, C; GENNARI, S; FRANCHI, S et al.Journal of crystal growth. 1999, Vol 205, Num 4, pp 474-480, issn 0022-0248Article

Synthesis of pure titanium nitride layers by multipulse excimer laser irradiation of titanium foils in a nitrogen-containing atmosphereD'ANNA, E; LEGGIERI, G; LUCHES, A et al.Journal of applied physics. 1991, Vol 69, Num 3, pp 1687-1696, issn 0021-8979Article

On the mechanisms of strain release in molecular-beam-epitaxy-grown In_xGa_1-xAs/GaAs single heterostructuresDRIGO, A. V; AYDINLI, A; CARNERA, A et al.Journal of applied physics. 1989, Vol 66, Num 5, pp 1975-1983, issn 0021-8979, 9 p.Article

Atomic displacements on stepped (16,11) copper structures: a channeling study = Déplacements atomiques sur les structures des surfaces à gradins (16,11) du cuivre: étude par canalisationBOULLIARD, J. C; COHEN, C; DOMANGE, J. L et al.Physical review. B, Condensed matter. 1984, Vol 30, Num 5, pp 2470-2486, issn 0163-1829Article

Pulsed laser irradiation of GaAs under oxygen and silane atmosphere: incorporation, losses, influence of native oxideCOHEN, C; SIEJKA, J; BERTI, M et al.Journal of applied physics. 1984, Vol 55, Num 11, pp 4081-4087, issn 0021-8979Article

Ion channelling Rutherford backscattering spectrometry structural characterization of CdS/CdTe heterostructuresGUERRIERI, A; DRIGO, A. V; ROMANATO, F et al.Materials science & engineering. B, Solid-state materials for advanced technology. 1993, Vol 16, Num 1-3, pp 160-164, issn 0921-5107Conference Paper

Structural characterisation and stability of Si_1-xGe_x/Si(100) heterostructures grown by molecular beam epitaxyRE, M; SCALESE, S; DE SALVADOR, D et al.Journal of crystal growth. 2001, Vol 227-28, pp 749-755, issn 0022-0248Conference Paper