au.\*:("DRUMMOND, T. J")
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GaAs/(In,Ga)As, p-channel, multiple strained quantum well field-effect transistors with high transconductance and high peak saturated drain currentZIPPERIAN, T. E; DAWSON, L. R; DRUMMOND, T. J et al.Applied physics letters. 1988, Vol 52, Num 12, pp 975-977, issn 0003-6951Article
Hall-effect measurements in p-type InGaAs/GaAs strained-layer superlatticesFRITZ, I. J; DAWSON, L. R; DRUMMOND, T. J et al.Applied physics letters. 1986, Vol 48, Num 2, pp 139-141, issn 0003-6951Article
Dislocation filtering in semiconductor superlattices with lattice-matched and lattice-mismatched layer materialsGOURLEY, P. L; DRUMMOND, T. J; DOYLE, B. L et al.Applied physics letters. 1986, Vol 49, Num 17, pp 1101-1103, issn 0003-6951Article
p-channel strained quantum well, field-effect transistorDRUMMOND, T. J; ZIPPERIAN, T. E; FRITZ, I. J et al.Applied physics letters. 1986, Vol 49, Num 8, pp 461-463, issn 0003-6951Article
Modulation-doped (Al,Ga)As/AlAs superlattice: electron transfer into AlAsDRUMMOND, T. J; FRITZ, I. J.Applied physics letters. 1985, Vol 47, Num 3, pp 284-286, issn 0003-6951Article
Low field mobility of 2-d electron gas in modulation doped AlxGa1-x•As/GaAs layersLEE, K; SHUR, S; DRUMMOND, T. J et al.Journal of applied physics. 1983, Vol 54, Num 11, pp 6432-6438, issn 0021-8979Article
The role of surface tension in the growth of strained quantum wire arraysSHERWIN, M. E; DRUMMOND, T. J; SROLOVITZ, D. J et al.Journal of applied physics. 1991, Vol 69, Num 2, pp 717-721, issn 0021-8979Article
A parametric investigation of AlGaAs/GaAs modulation-doped quantum wiresSHERWIN, M. E; DRUMMOND, T. J.Journal of applied physics. 1989, Vol 66, Num 11, pp 5444-5455, issn 0021-8979Article
Magnetotransport and luminescence measurements in an n-type selectively doped InGa/GaAs strained quantum well structureFRITZ, I. J; SCHIRBER, J. E; JONES, E. D et al.Applied physics letters. 1987, Vol 50, Num 19, pp 1370-1372, issn 0003-6951Article
Optical bleaching in an epitaxial (Al,Ga)As Fabry-Perot resonatorGOURLEY, P. L; DRUMMOND, T. J.Applied physics letters. 1987, Vol 51, Num 18, pp 1395-1397, issn 0003-6951Article
Current-voltage and capacitance-voltage characteristics of a metal/Al0.5Ga0.5As/GaAs capacitorDRUMMOND, T. J; FISCHER, R; ARNOLD, D et al.Applied physics letters. 1984, Vol 44, Num 2, pp 214-216, issn 0003-6951Article
The superlattice barrier capacitor: a structure for the investigation of heterojunction interfacesDRUMMOND, T. J; KOPP, W; FISCHER, R et al.IEEE electron device letters. 1984, Vol 5, Num 5, pp 139-141, issn 0741-3106Article
The structural dependence of light sensitivity in (Al, Ga)As/GaAs modulation doped heterostructuresKLEM, J; DRUMMOND, T. J; FISCHER, R et al.Journal of electronic materials. 1984, Vol 13, Num 5, pp 741-748, issn 0361-5235Article
Enhancement-mode metal/(Al, Ga)As/GaAs buried-interface field-effect transistor (BIFET)DRUMMOND, T. J; KOPP, W; ARNOLD, D et al.Electronics Letters. 1983, Vol 19, Num 23, pp 986-988, issn 0013-5194Article
Analytic MODFET models beyond the triangular well approximationDRUMMOND, T. J; SHERWIN, M. E.Solid-state electronics. 1990, Vol 33, Num 7, pp 885-891, issn 0038-1101, 7 p.Article
Long-lived resonance states in n-doped AlGaAsHJALMARSON, H. P; DRUMMOND, T. J.Physical review letters. 1988, Vol 60, Num 23, pp 2410-2413, issn 0031-9007Article
Far-infrared characterization of AlAs-GaAs superlattice structureSUDHARSANAN, R; PERKOWITZ, S; BO LOU et al.Superlattices and microstructures. 1988, Vol 4, Num 6, pp 657-660, issn 0749-6036Article
Neutral impurity scattering in AlGaAsDRUMMOND, T. J; HJALMARSON, H. P.Applied physics letters. 1986, Vol 48, Num 17, pp 1144-1146, issn 0003-6951Article
Magneto-optic determinations of the pressure dependence of band-gap energies and effectve masses in strained-layer superlatticesJONES, E. D; ACKERMANN, H; SCHIRBER, J. E et al.Applied physics letters. 1985, Vol 47, Num 5, pp 492-494, issn 0003-6951Article
Improved AlxGa1-xAs bulk lasers with superlattice interfacesFISCHER, R; KLEM, J; DRUMMOND, T. J et al.Applied physics letters. 1984, Vol 44, Num 1, pp 1-3, issn 0003-6951Article
Instabilities in modulation doped field-effect transistors (MODFETs) at 77KFISCHER, R; DRUMMOND, T. J; KOPP, W et al.Electronics Letters. 1983, Vol 19, Num 19, pp 789-791, issn 0013-5194Article
Persistent photoconductivity in (Al,Ga)As/GaAs modulation doped structures: dependence on structure and growth temperatureKLEM, J; MASSELINK, W. T; ARNOLD, D et al.Journal of applied physics. 1983, Vol 54, Num 9, pp 5214-5217, issn 0021-8979Article
AlN-GaN quarter-wave reflector stack grown by gas-source MBE on (100) GaAsFRITZ, I. J; DRUMMOND, T. J.Electronics Letters. 1995, Vol 31, Num 1, pp 68-69, issn 0013-5194Article
Visible, room-temperature, surface-emitting laser using an epitaxial Fabry-Perot resonator with AlGaAs/AlAs quarter-wave high reflectors and AlGaAs/GaAs multiple quantum wellsGOURLEY, P. L; DRUMMOND, T. J.Applied physics letters. 1987, Vol 50, Num 18, pp 1225-1227, issn 0003-6951Article
