SCHOTTKY BARRIERS AND OHMIC CONTACTS ON N-TYPE INP BASED COMPOUND SEMICONDUCTORS FOR MICROWAVE FET'SMORKOC H; DRUMMOND TJ; STANCHAK CM et al.1981; IEEE TRANS. ELECTRON DEVICES; ISSN 0018-9383; USA; DA. 1981; VOL. 28; NO 1; PP. 1-5; BIBL. 24 REF.Article

THREE PERIOD (A1,GA)AS/GAAS HETEROSTRUCTURES WITH EXTREMELY HIGH MOBILITIESDRUMMOND TJ; KOPP W; MORKOC H et al.1981; ELECTRON. LETT.; ISSN 0013-5194; GBR; DA. 1981; VOL. 17; NO 13; PP. 442-444; BIBL. 12 REF.Article

GAAS MESFET'S BY MOLECULAR BEAM EPITAXYMORKOC H; DRUMMOND TJ; OMORI M et al.1982; IEEE TRANS. ELECTRON DEVICES; ISSN 0018-9383; USA; DA. 1982; VOL. 29; NO 2; PP. 222-224; BIBL. 19 REF.Article

INTERFACIAL PROPERTIES OF (AL,GA)AS/GAAS STRUCTURES: EFFECT OF SUBSTRATE TEMPERATURE DURING GROWTH BY MOLECULAR BEAM EPITAXYMORKOC H; DRUMMOND TJ; FISCHER R et al.1982; J. APPL. PHYS.; ISSN 0021-8979; USA; DA. 1982; VOL. 53; NO 2; PP. 1030-1033; BIBL. 24 REF.Article

COMPARISON OF SINGLE AND MULTIPLE PERIOD MODULATION DOPED AL_XGA_1-XAS/GAAS HETEROSTRUCTURES FOR FETSDRUMMOND TJ; KEEVER M; MORKOC H et al.1982; JPN. J. APPL. PHYS.; ISSN 0021-4922; JPN; DA. 1982; VOL. 21; NO 2; PART. 1; PP. L65-L67; BIBL. 8 REF.Article

LIGHT SENSITIVITY OF AL_0.25GA_0.75 AS/GAAS MODULATION-DOPED STRUCTURES GROWN BY MOLECULAR BEAM EPITAXY: EFFECT OF SUBSTRATES TEMPERATUREFISCHER R; ARNOLD D; THORNE RE et al.1983; ELECTRONICS LETTERS; ISSN 0013-5194; GBR; DA. 1983; NO 6; PP. 200-202; BIBL. 10 REF.Article

PROPERTIES OF SILICON-DOPED AL_XGA_1-XAS GROWN BY MOLECULAR BEAM EPITAXYFISCHER R; DRUMMOND TJ; THORNE RE et al.1983; THIN SOLID FILMS; ISSN 0040-6090; CHE; DA. 1983; VOL. 99; NO 4; PP. 391-397; BIBL. 12 REF.Article

CURRENT TRANSPORT IN MODULATION-DOPED AL_XGA_1-XAS/GAAS HETEROJUNCTION STRUCTURES AT MODERATE FIELD STRENGTHSKEEVER M; DRUMMOND TJ; KOPP W et al.1982; JAPANESE JOURNAL OF APPLIED PHYSICS; ISSN 0021-4922; JPN; DA. 1982; VOL. 21; NO 10; PART. 1; PP. 1489-1495; BIBL. 15 REF.Article

ELECTRON MOBILITY IN SINGLE AND MULTIPLE PERIOD MODULATION-DOPED (AL,GA)AS/GAAS HETEROSTRUCTURESDRUMMOND TJ; KOPP W; KEEVER M et al.1982; J. APPL. PHYS.; ISSN 0021-8979; USA; DA. 1982; VOL. 53; NO 2; PP. 1023-1027; BIBL. 10 REF.Article

MODEL FOR MODULATION DOPED FIELD EFFECT TRANSISTORDRUMMOND TJ; MORKOC H; LEE K et al.1982; ELECTRON DEVICE LETTERS; ISSN 0193-8576; USA; DA. 1982; VOL. 3; NO 11; PP. 338-341; BIBL. 8 REF.Article

DOUBLE HETEROJUNCTION AL_XGA_1-XAS/GAAS BIPOLAR TRANSISTORS (DHBJT'S) BY MBE WITH A CURRENT GAIN OF 1650SU SL; TEJAYADI O; DRUMMOND TJ et al.1983; ELECTRON DEVICE LETTERS; ISSN 0193-8576; USA; DA. 1983; VOL. 4; NO 5; PP. 130-132; BIBL. 10 REF.Article

INFLUENCE OF AL_XGA₁-_XAS BUFFER LAYERS ON THE PERFORMANCE OF MODULATION-DOPED FIELD-EFFECT TRANSISTORSDRUMMOND TJ; KOPP W; THORNE RE et al.1982; APPL. PHYS. LETT.; ISSN 0003-6951; USA; DA. 1982; VOL. 40; NO 10; PP. 879-881; BIBL. 10 REF.Article

TRANSPORT IN MODULATION-DOPED STRUCTURES (AL_XGA_1-XAS/GAAS) AND CORRELATIONS WITH MONTE CARLO CALCULATIONS (GAAS)DRUMMOND TJ; KOPP W; MORKOC H et al.1982; APPL. PHYS. LETT.; ISSN 0003-6951; USA; DA. 1982; VOL. 41; NO 3; PP. 277-279; BIBL. 15 REF.Article

EXPERIMENTAL AND THEORETICAL ELECTRON MOBILITY OF MODULATION DOPED AL_XGA_1-XAS/GAAS HETEROSTRUCTURES GROWN BY MOLECULAR BEAM EPITAXYDRUMMOND TJ; MORKOC H; HESS K et al.1981; J. APPL. PHYS.; ISSN 0021-8979; USA; DA. 1981; VOL. 52; NO 8; PP. 5231-5234; BIBL. 13 REF.Article

HIGH MOBILITIES IN AL_XGA_1-XAS-GAAS HETEROJUNCTIONSWITKOWSKI LC; DRUMMOND TJ; STANCHAK CM et al.1980; APPL. PHYS. LETT.; ISSN 0003-6951; USA; DA. 1980; VOL. 37; NO 11; PP. 1033-1035; BIBL. 10 REF.Article

ELECTRON MOBILITIES IN MODULATION DOPED GA_0.47IN_0.53AS/AL_0.48IN_0.52AS HETEROJUNCTIONS GROWN BY MOLECULAR BEAM EPITAXYCHENG KY; CHO AY; DRUMMOND TJ et al.1982; APPL. PHYS. LETT.; ISSN 0003-6951; USA; DA. 1982; VOL. 40; NO 2; PP. 147-149; BIBL. 13 REF.Article

SURFACE SEGREGATION MODEL FOR SN-DOPED GAAS GROWN BY MOLECULAR BEAM EPITAXYROCKETT A; DRUMMOND TJ; GREENE JE et al.1982; J. APPL. PHYS.; ISSN 0021-8979; USA; DA. 1982; VOL. 53; NO 10; PP. 7085-7087; BIBL. 14 REF.Article

MOBILITY ENHANCEMENT IN INVERTED AL_XGA_1-XAS/GAAS MODULATION DOPED STRUCTURES AND ITS DEPENDENCE ON DONOR-ELECTRON SEPARATIONMORKOC H; DRUMMOND TJ; THORNE RE et al.1981; JAPANESE JOURNAL OF APPLIED PHYSICS; ISSN 0021-4922; JPN; DA. 1981; VOL. 20; NO 12; PP. L913-L916; BIBL. 14 REF.Article

CURRENT TRANSPORT IN MODULATION-DOPED GA_0.47IN_0.53AS/AL_0.48IN_0.52AS HETEROJONCTIONS AT MODERATE ELECTRIC FIELDSDRUMMOND TJ; MORKOC H; CHENG KY et al.1982; J. APPL. PHYS.; ISSN 0021-8979; USA; DA. 1982; VOL. 53; NO 5; PP. 3654-3657; BIBL. 14 REF.Article

INFLUENCE OF SUBSTRATE TEMPERATURE ON THE MORPHOLOGY OF AL_XGA_1-XA_S GROWN BY MOLECULAR BEAM EPITAXYMORKOC H; DRUMMOND TJ; KOPP W et al.1982; J. ELECTROCHEM. SOC.; ISSN 0013-4651; USA; DA. 1982; VOL. 129; NO 4; PP. 824-826; BIBL. 11 REF.Article

ENHANCED MOBILITY IN INVERTED AL_XGA_1-XAS/GAAS HETEROJUNCTIONS: BINARY ON TOP OF TERNARYDRUMMOND TJ; MORKOC H; SU SL et al.1981; ELECTRON. LETT.; ISSN 0013-5194; GBR; DA. 1981; VOL. 17; NO 23; PP. 870-871; BIBL. 12 REF.Article

GAAS/ALGAAS HETEROJUNCTION BIPOLAR TRANSISTORS FOR INTEGRATED CIRCUIT APPLICATIONSMCLEVIGE WV; YUAN HT; DUNCAN WM et al.1982; ELECTRON DEVICE LETT.; ISSN 0193-8576; USA; DA. 1982; VOL. 3; NO 2; PP. 43-45; BIBL. 14 REF.Article

PERFORMANCE OF INVERTED STRUCTURE MODULATION DOPED SCHOTTKY BARRIER FIELD EFFECT TRANSISTORSTHORNE RE; FISCHER R; SU SL et al.1982; JPN. J. APPL. PHYS.; ISSN 0021-4922; JPN; DA. 1982; VOL. 21; NO 4; PP. L223-L224; BIBL. 8 REF.Article

EFFECT OF BACKGROUND DOPING ON THE ELECTRON MOBILITY OF (AL, GA)AS/GAAS HETEROSTRUCTURESDRUMMOND TJ; KOPP W; MORKOC H et al.1981; J. APPL. PHYS.; ISSN 0021-8979; USA; DA. 1981; VOL. 52; NO 9; PP. 5689-5690; BIBL. 11 REF.Article

USE OF A SUPERLATTICE TO ENHANCE THE INTERFACE PROPERTIES BETWEEN TWO BULK HETEROLAYERSDRUMMOND TJ; KLEM J; ARNOLD D et al.1983; APPLIED PHYSICS LETTERS; ISSN 0003-6951; USA; DA. 1983; VOL. 42; NO 7; PP. 615-617; BIBL. 16 REF.Article