Etude cristallographique de couches minces de carbure de silicium formées par contamination de silicium chauffé sous vide = Crystallographic study of SiC layers grown by carbon contamination of Si surfaces heated in vacuumGAUTHIER, J.-P; DURUPT, P.Journal de microscopie et de spectroscopie électroniques. 1983, Vol 8, Num 5, pp 301-312, issn 0395-9279Article

FORMATION OF BETA -SIC LAYERS ON HEATED SILICON WAFERS EXPOSED TO SUBLIMED CARBONDURUPT P; GAUTHIER JP; ROGER JA et al.1981; THIN SOLID FILMS; ISSN 0040-6090; CHE; DA. 1981; VOL. 85; NO 2; PP. L191-L193; BIBL. 9 REF.Article

CARACTERISATION ELECTRIQUE DE COUCHES ENFOUIES DE SIC OBTENUES PAR L'IMPLANTATION D'IONS CARBONE DANS LE SILICIUM MONOCRISTALLINMOUHOUB A; ROGER JA; DURUPT P et al.1982; THIN SOLID FILMS; ISSN 0040-6090; CHE; DA. 1982; VOL. 88; NO 2; PP. 101-112; ABS. ENG; BIBL. 10 REF.Article

Behaviour of α-Al₂O₃ insulator surfaces under electron irradiationJARDIN, C; DURUPT, P; ROBERT, D et al.Journal of materials science. 1991, Vol 26, Num 11, pp 3019-3024, issn 0022-2461Article

Electronic spectroscopy (AES, EELS) and cathodoluminescence (CL) for α-Al₂O₃ characterizationGHAMNIA, M; JARDIN, C; MARTINEZ, L et al.Vacuum. 1997, Vol 48, Num 2, pp 129-134, issn 0042-207XArticle

Dégâts d'irradiation électronique du corindon = Electron irradiation damage of corundumJARDIN, C; DURUPT, P; ROBERT, D et al.Materials science & engineering. B, Solid-state materials for advanced technology. 1990, Vol 7, Num 1-2, pp 119-125, issn 0921-5107Article

The behaviour of luminescent F and F⁺ centers in sapphireJARDIN, C; MARTINEZ, L; GHAMNIA, M et al.Le Vide (1995). 1998, Vol 53, Num 287, pp 539-542, issn 1266-0167, SUPConference Paper

Infrared kinetic study of ultrathin SiC buffer layers grown on Si(100) by reactive chemical vapour depositionFERRO, G; MONTEIL, Y; VINCENT, H et al.Thin solid films. 1996, Vol 278, Num 1-2, pp 22-27, issn 0040-6090Article