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TEMPERATURE PROFILE AND THERMAL STRESS CALCULATIONS IN GAAS CRYSTALS GROWING FROM THE MELTDUSEAUX M.1983; JOURNAL OF CRYSTAL GROWTH; ISSN 0022-0248; NLD; DA. 1983; VOL. 61; NO 3; PP. 576-590; BIBL. 25 REF.Article

FORMATION OF DISLOCATIONS DURING LIQUID ENCAPSULATED CZOCHRALSKI GROWTH OF GAAS SINGLE CRYSTALSDUSEAUX M; JACOB G.1982; APPL. PHYS. LETT.; ISSN 0003-6951; USA; DA. 1982; VOL. 40; NO 9; PP. 790-793; BIBL. 21 REF.Article

THE NATURE OF THE M-TYPE ASTEROIDS FROM OPTICAL POLARIMETRYDOLLFUS A; MANDEVILLE JC; DUSEAUX M et al.1979; ICARUS; USA; DA. 1979; VOL. 37; NO 1; PP. 124-132; BIBL. 1 P.Article

DISLOCATIONS IN GAASJACOB G; FARGES JP; SCHEMALI G et al.1982; J. CRYST. GROWTH; ISSN 0022-0248; NLD; DA. 1982; VOL. 57; NO 2; PP. 245-258; BIBL. 38 REF.Article

Insular crystals in undoped GaAs single crystals: a probable source of dislocationCORNIER, J. P; DUSEAUX, M; CHEVALIER, J. P et al.Applied physics letters. 1984, Vol 45, Num 10, pp 1105-1107, issn 0003-6951Article

Interaction between dislocations and In in-doped GaAs single crystals under high-temperature plastic deformationDJEMEL, A; CASTAING, J; DUSEAUX, M et al.Philosophical magazine. A. Physics of condensed matter. Defects and mechanical properties. 1988, Vol 57, Num 4, pp 671-676, issn 0141-8610Article

Réduction des dislocations dans le GaAs massif = Diminution of dislocations in bulk GaAsMARTIN, G. M; DUSEAUX, M.1984, 34 p.Report

DISLOCATION-FREE GAAS AND INP CRYSTALS BY ISOELECTRONIC DOPINGJACOB G; DUSEAUX M; FARGES JP et al.1983; JOURNAL OF CRYSTAL GROWTH; ISSN 0022-0248; NLD; DA. 1983; VOL. 61; NO 2; PP. 417-424; BIBL. 12 REF.Article

Etude par microscopie électronique en transmission de petits défauts dans les monocristaux de GaAs semi-isolants = Transmission electronic microscopy study of small defects in semi-isolating GaAs single crystalsCHEVALIER, J. P; DUSEAUX, M.1985, 24 p.Report

Effects of dislocations on threshold voltage of GaAs field-effect transistorsSUCHET, P; DUSEAUX, M; MALUENDA, J et al.Journal of applied physics. 1987, Vol 62, Num 3, pp 1097-1101, issn 0021-8979Article

Study of dislocations in highly In doped GaAs crystals grown by liquid encapsulation Czochralski techniquePICHAUD, B; BURLE-DURBEC, N; MINARI, F et al.Journal of crystal growth. 1985, Vol 71, Num 3, pp 648-654, issn 0022-0248Article

Thermal activation of plastic deformation of undoped GaAs between 528 and 813 KASTIE, P; COUDERC, J. J; CHOMEL, P et al.Physica status solidi. A. Applied research. 1986, Vol 96, Num 1, pp 225-242, issn 0031-8965Article

Evidence of the origin of infrared scattering in GaAs with high-resolution infrared tomographySUCHET, P; DUSEAUX, M; GILLARDIN, G et al.Journal of applied physics. 1987, Vol 62, Num 9, pp 3700-3703, issn 0021-8979Article

Influence of indium on the dissociation of dislocations in GaAs at high temperatureJIMENEZ-MELENDO, M; DJEMEL, A; RIVIERE, J. P et al.Revue de physique appliquée. 1988, Vol 23, Num 3, pp 251-255, issn 0035-1687Article

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