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HIGH-TEMPERATURE DEFECT STRUCTURE OF IRON-DOPED ALPHA -ALUMINADUTT BV; KROGER FA.1975; J. AMER. CERAM. SOC.; U.S.A.; DA. 1975; VOL. 58; NO 11-12; PP. 474-476; BIBL. 9 REF.Article

TEM OBSERVATION OF PRECIPITATES OF CD-PHOSPHIDES IN CD-DIFFUSED INP: A CORRELATION WITH THE PREVIOUSLY PROPOSED DIFFUSION MODELSDUTT BV; BRASEN D.1983; JOURNAL OF THE ELECTROCHEMICAL SOCIETY; ISSN 0013-4651; USA; DA. 1983; VOL. 110; NO 1; PP. 207-214; BIBL. 9 REF.Article

VIBRATIONAL MODES OF DEFECTS IN ZNXCD1-XTE:P AND MGXCD1-XTE:P.DUTT BV; SPITZER WG.1977; J. APPL. PHYS.; U.S.A.; DA. 1977; VOL. 48; NO 5; PP. 2107-2109; BIBL. 6 REF.Article

A LOCALIZED VIBRATIONAL MODE STUDY OF INFRARED ABSORPTION OF CDTE: P.DUTT BV; SPITZER WG.1977; J. APPL. PHYS.; U.S.A.; DA. 1977; VOL. 48; NO 3; PP. 954-960; BIBL. 37 REF.Article

THE ORIGIN AND ELIMINATION OF SI PYRAMIDS IN (GA, AL)AS:SI LEDSDUTT BV; LUDWIG RA; ERMANIS F et al.1983; JOURNAL OF CRYSTAL GROWTH; ISSN 0022-0248; NLD; DA. 1983; VOL. 62; NO 1; PP. 21-26; BIBL. 15 REF.Article

SCHOTTKY BARRIER RESTRICTED GAALAS LASERTEMKIN H; CHIN AK; DUTT BV et al.1982; ELECTRONICS LETTERS; ISSN 0013-5194; GBR; DA. 1982; VOL. 18; NO 16; PP. 701-703; BIBL. 11 REF.Article

HIGH-TEMPERATURE DEFECT STRUCTURE OF COBALT-DOPED ALPHA -ALUMINADUTT BV; HURRELL JP; KROGER FA et al.1975; J. AMER. CERAM. SOC.; U.S.A.; DA. 1975; VOL. 58; NO 9-10; PP. 420-427; BIBL. 27 REF.Article

THE RELIABILITY OF SCHOTTKY BARRIER RESTRICTED CRAAS/GA AIAS LEDSCHIN AK; ZIPFEL CL; DUTT BV et al.1982; JAPANESE JOURNAL OF APPLIED PHYSICS; ISSN 0021-4922; JPN; DA. 1982; VOL. 21; NO 9; PART. 1; PP. 1308-1312; BIBL. 23 REF.Article

FREE-CARRIER ABSORPTION OF N-TYPE ZNSE:AL.DUTT BV; KIM OK; SPITZER WG et al.1977; J. APPL. PHYS.; U.S.A.; DA. 1977; VOL. 48; NO 5; PP. 2110-2111; BIBL. 9 REF.Article

HIGH-TEMPERATURE DEFECT STRUCTURE OF COBALT-DOPED ALPHA -ALUMINA.DUTT BV; HURRELL JP; KROEGER FA et al.1975; J. AMER. CERAM. SOC.; U.S.A.; DA. 1975; VOL. 58; NO 9-10; PP. 420-427; BIBL. 27 REF.Article

ELEMENTAL ARSENIC IN NATIVE OXIDE FILMS ON ALXGA1-XASSCHWARTZ GP; DUTT BV; GUALTIERI GJ et al.1981; APPL. PHYS. LETT.; ISSN 0003-6951; USA; DA. 1981; VOL. 39; NO 1; PP. 52-54; BIBL. 20 REF.Article

PHOTOLUMINESCENCE STUDY OF NATIVE DEFECTS IN INPTEMKIN H; DUTT BV; BONNER WA et al.1981; APPL. PHYS. LETT.; ISSN 0003-6951; USA; DA. 1981; VOL. 38; NO 6; PP. 431-433; BIBL. 9 REF.Article

DEEP RADIATIVE LEVELS IN INPTEMKIN H; DUTT BV; BONNER WA et al.1982; JOURNAL OF APPLIED PHYSICS; ISSN 0021-8979; USA; DA. 1982; VOL. 53; NO 11; PART. 1; PP. 7526-7533; BIBL. 37 REF.Article

FORMATION OF P+-P--N- JUNCTIONS IN INP BY CD DIFFUSIONCHIN AK; DUTT BV; TEMKIN H et al.1980; APPL. PHYS. LETT.; ISSN 0003-6951; USA; DA. 1980; VOL. 36; NO 11; PP. 924-926; BIBL. 16 REF.Article

STACKING FAULTS AND SUBSTRUCTURE IN GAAS(CGA,AL)AS HETEROEPITAXIAL LAYERS. I: ORIGIN AND ELIMINATIONDUTT BV; MAHAJAN S; ROEDEL RJ et al.1981; J. ELECTROCHEM. SOC.; ISSN 0013-4651; USA; DA. 1981; VOL. 128; NO 7; PP. 1573-1578; BIBL. 22 REF.Article

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