Pascal and Francis Bibliographic Databases

Help

Search results

Your search

au.\*:("DUVERNEUIL, P")

Document Type [dt]

A-Z Z-A Frequency ↓ Frequency ↑
Export in CSV

Publication Year[py]

A-Z Z-A Frequency ↓ Frequency ↑
Export in CSV

Discipline (document) [di]

A-Z Z-A Frequency ↓ Frequency ↑
Export in CSV

Author Country

A-Z Z-A Frequency ↓ Frequency ↑
Export in CSV

Results 1 to 25 of 46

  • Page / 2
Export

Selection :

  • and

Two-dimensional modeling of low pressure chemical vapor deposition hot wall tubular reactors. I: Hypotheses, methods, and first resultsDUVERNEUIL, P; COUDERC, J.-P.Journal of the Electrochemical Society. 1992, Vol 139, Num 1, pp 296-304, issn 0013-4651Article

Analyse et modélisation des réacteurs de dépôt chimique en phase vapeur utilisés dans l'industrie microélectronique = Analysis and modeling of CVD reactors used in microelectronicsAZZARO, C; DUVERNEUIL, P; COUDERC, J. P et al.Entropie (Paris). 1991, Vol 27, Num 166, pp 28-41, issn 0013-9084Article

Influence de la pulsation liquide sur le comportement d'un réacteur électrochimique constitué par un lit de particules conductrices. I: Transfert de matièreRATEL, A; DUVERNEUIL, P; LACOSTE, G et al.Journal of applied electrochemistry. 1988, Vol 18, Num 3, pp 394-400, issn 0021-891X, 7 p.Article

Comments on the influence of the entrance zone in LPCVD reactors for in situ phosphorus-doped polysilicon depositionAZZARO, C; DUVERNEUIL, P; COUDERC, J. P et al.Chemical engineering science. 1993, Vol 48, Num 10, pp 1915-1922, issn 0009-2509Article

Analysis and modeling of SIPOS deposition in a hot wall tubular reactor. Part I: Review of previous work and experimental studyFAYOLLE, F; COUDERC, J.-P; DUVERNEUIL, P et al.Advanced materials (Weinheim). 1996, Vol 8, Num 11, pp 255-263, issn 0935-9648Article

Quelques propriétés physicochimiques de l'octogène en solution: masse volumique et indice de réfraction des solutions dans le diméthylsulfoxyde, solubilité dans le cyclohexanone, l'acétone et le diméthylsulfoxyde = Some physical and chemical constants of solutions of HMX: density and refractive index of solutions in dimethylsulfoxide, solubility in cyclohexanon, acetone and dimethylsulfoxideDUVERNEUIL, P; OUSSET, R; HIQUILY, N et al.Sciences et techniques de l'Armement. 1987, Vol 61, Num 235, pp 253-263, issn 0151-0290, 3Article

Etude de la croissance de cristaux d'octogène à partir de solutions dans la cyclohexanone = Study of the growth of HMX crystals in solutions in cyclohexanoneDUVERNEUIL, P; OUSSET, R; HIQUILY, N et al.Sciences et techniques de l'Armement. 1987, Vol 61, Num 235, pp 239-251, issn 0151-0290, part 3Article

Analysis and modeling of SIPOS deposition in a hot wall tubular reactor. Part II: Modeling of SIPOS depositionFAYOLLE, F; COUDERC, J.-P; DUVERNEUIL, P et al.Advanced materials (Weinheim). 1996, Vol 8, Num 11, pp 265-275, issn 0935-9648Article

Electrochemical treatment of heavy metals (Cu2+, Cr6+, Ni2+) from industrial effluent and modeling of copper reductionHUNSOM, M; PRUKSATHORN, K; DAMRONGLERD, S et al.Water research (Oxford). 2005, Vol 39, Num 4, pp 610-616, issn 0043-1354, 7 p.Article

Prediction of gas and pollutant distributions in a ventilated cell in case of fireESPI, E; BERNE, P; DUVERNEUIL, P et al.International conference on air distribution in rooms. 1998, 2Vol, vol1, 271-277Conference Paper

SIPOS deposition from disilane: experimental study and modellingCORDIER, C; DEHAN, E; SCHEID, E et al.Journal de physique. IV. 1995, Vol 5, Num 5, pp C5.315-C5.322, issn 1155-4339, 1Conference Paper

SnO2 coated Ni particles prepared by fluidized bed chemical vapor depositionBERTRAND, N; MAURY, F; DUVERNEUIL, P et al.Surface & coatings technology. 2006, Vol 200, Num 24, pp 6733-6739, issn 0257-8972, 7 p.Article

Behaviour, modelling and simulation of a pulsed three-dimensional radial electrode with continuous solid flow: Part IGARFIAS-VASQUEZ, F. J; DUVERNEUIL, P; LACOSTE, G et al.Journal of applied electrochemistry. 2004, Vol 34, Num 4, pp 417-426, issn 0021-891X, 10 p.Article

Two-dimensional modeling of low presure chemical vapor deposition hot wall tubular reactors. II: Systematic analysis of pure and phosphorus in situ doped polycrystalline silicon depositionsAZZARA, C; DUVERNEUIL, P; COUDERC, J.-P et al.Journal of the Electrochemical Society. 1992, Vol 139, Num 1, pp 305-312, issn 0013-4651Article

Thermal and kinetic modelling of low-pressure chemical vapour deposition hot-wall tubular reactorsAZZARO, C; DUVERNEUIL, P; COUDERC, J. P et al.Chemical engineering science. 1992, Vol 47, Num 15-16, pp 3827-3838, issn 0009-2509Article

Influence de la pulsation liquide sur le comportement d'un réacteur électrochimique constitué par un lit de particules conductrices. I: Transfert de matière = Influence of liquid pulsation on the behavior of an electrochemical reactor made of conducting particle bed-I: Mass transferRATEL, A; DUVERNEUIL, P; LACOSTE, G et al.Journal of applied electrochemistry. 1988, Vol 18, Num 3, pp 394-400, issn 0021-891XArticle

A new reactor for industrial organic electrosynthesisROQUERO, P; GHANEM-LAKHAL, A; COGNET, P et al.Chemical engineering science. 1996, Vol 51, Num 10, pp 1847-1855, issn 0009-2509Conference Paper

A novel wafer cage for better uniformity of phosphorus doped silicon layers : experimental study and modellingAZZARO, C; DUVERNEUIL, P; COUDERC, J. P et al.Journal de physique IV. Colloque. 1991, Vol 1, Num 2, pp C2.71-C2.78Conference Paper

An understanding of in situ boron doped polysilicon films by characterization and simulationAZZARO, C; SCHEID, E; BIELLE-DASPET, D et al.Journal de physique IV. Colloque. 1991, Vol 1, Num 2, pp C2.79-C2.85Conference Paper

Silicon deposition from disilane : experimental study and modellingGUEYE, M; SCHEID, E; TAURINES, P et al.Journal de physique IV. Colloque. 1991, Vol 1, Num 2, pp C2.63-C2.70Conference Paper

Simulation of silicon deposition from SiHCl3 in a CVD barrel reactor at atmospheric pressureDE PAOLA, E; DUVERNEUIL, P.Computers & chemical engineering. 1998, Vol 22, pp 683-686, issn 0098-1354, SUPConference Paper

Economical analysis and optimization of a low pressure chemical vapor deposition (LPCVD) reactorTAMANI, T; DUVERNEUIL, P; COUDERC, J. P et al.Journal de physique. IV. 1995, Vol 5, Num 5, pp C5.323-C5.330, issn 1155-4339, 1Conference Paper

Influence of the doping gas on the axial uniformity of the growth rate and the electrical properties of LPCVD in-situ doped polysilicon layersBRIAND, D; SARRET, M; DUVERNEUIL, P et al.Journal de physique. IV. 1995, Vol 5, Num 5, pp C5.887-C5.893, issn 1155-4339, 2Conference Paper

Optimisation économique d'un réacteur L.P.C.V.D. industriel = Economical optimization of an industrial L.P.C.V.D. reactorGOHIN, G; FLOQUET, P; PIBOULEAU, L et al.Entropie (Paris). 1990, Vol 26, Num 159, pp 45-52, issn 0013-9084Article

Chemical vapor deposition of SnO2 coatings on Ti plates for the preparation of electrocatalytic anodesDUVERNEUIL, P; MAURY, F; PEBERE, N et al.Surface & coatings technology. 2002, Vol 151-52, pp 9-13, issn 0257-8972Conference Paper

  • Page / 2