au.\*:("DVURECHENSKY AV")
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PRODUCTION AND REARRANGEMENT OF RADIATION DEFECTS IN ION IMPLANTED SEMICONDUCTORSDVURECHENSKY AV; SMIRNOV LS.1978; RAD. EFFECTS; GBR; DA. 1978; VOL. 37; NO 3-4; PP. 173-178; BIBL. 39 REF.Article
THE MECHANISMS OF IMPURITY REDISTRIBUTION ON LASER-ANNEALING OF ION-IMPLANTED SEMICONDUCTORSDVURECHENSKY AV; KACHURIN GA; ANTONENKO AK et al.1978; RAD. EFFECTS; GBR; DA. 1978; VOL. 37; NO 3-4; PP. 179-181; BIBL. 7 REF.Article
HIGH DOSE EFFECTS IN ION IMPLANTATION.DVURECHENSKY AV; GERASIMENKO NN; ROMANOV SI et al.1976; RAD. EFFECTS; G.B.; DA. 1976; VOL. 30; NO 2; PP. 69-71; BIBL. 4 REF.Article
SPECTRAL EMISSIVITY AND ABSORPTION COEFFICIENT OF SILICA GLASS AT EXTREMELY HIGH TEMPERATURES IN THE SEMITRANSPARENT REGIONDVURECHENSKY AV; PETROV VA; YU REZNIK V et al.1979; INFRARED PHYS.; GBR; DA. 1979; VOL. 19; NO 3-4; PP. 465-469; BIBL. 13 REF.Conference Paper
DEFECT ANNEALING INVESTIGATION ON ION IMPLANTED SI BY CESR TECHNIQUE.DVURECHENSKY AV; GERASIMENKO NN; GLAZMAN VB et al.1976; RAD. EFFECTS; G.B.; DA. 1976; VOL. 31; NO 1; PP. 37-40; BIBL. 7 REF.Article
DEFECT ANNEALING IN POLYCRYSTALLINE SILICON FILMSDVURECHENSKY AV; GERASIMENKO NN; POTAPOVA LP et al.1978; THIN SOLID FILMS; NLD; DA. 1978; VOL. 52; NO 3; PP. 329-332; BIBL. 10 REF.Article
THE PHASE COMPOSITION OF SIOX FILMSDVURECHENSKY AV; EDELMAN FL; RYAZANTSEV IA et al.1982; THIN SOLID FILMS; ISSN 0040-6090; CHE; DA. 1982; VOL. 91; NO 1; PP. L55-L57; BIBL. 8 REF.Article
HIGH SPEED EXPERIMENTAL APPARATUS TO STUDY THE EMISSIVITY OF SEMI-TRANSPARENT MATERIALS.DVURECHENSKY AV; PETROV VA; REZNIK I YU et al.sdIN: INT. CONF. INFRARED PHYS.; HONGGERBERG-ZURICH; 1975; S.L.; DA. S.D.; PP. C97-C99; BIBL. 2 REF.Conference Paper
ACCUMULATION OF DEFECTS IN SILICON AT SUPERHIGH DOSES OF ELECTRON IRRADIATIONAKHMETOV VD; BOLOTOV VV; DVURECHENSKY AV et al.1980; RADIAT. EFF.; ISSN 0033-7579; GBR; DA. 1980; VOL. 53; NO 1-2; PP. 33-39; BIBL. 16 REF.Article