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MEMOIRE DYNAMIQUEBERDICHEVSKIJ ZM; KAJKOV VN.1976; PRIBORY TEKH. EKSPER.; S.S.S.R.; DA. 1976; NO 3; PP. 80-81; BIBL. 1 REF.Article

DYNAMIC MEMORIES OFFER ADVANTAGES.WINFIELD J.1977; ELECTRON. DESIGN; U.S.A.; DA. 1977; VOL. 25; NO 14; PP. 66-70; BIBL. 2 REF.Article

PROPOSED PROCESS MODIFICATIONS FOR DYNAMIC BIPOLAR MEMORY TO REDUCE EMITTER-BASE LEAKAGE CURRENTANTIPOV I.1980; IEEE J. SOLID-STATE CIRCUITS; ISSN 0018-9200; USA; DA. 1980; VOL. 15; NO 4; PP. 714-719; BIBL. 14 REF.Article

SYSTEME D'ELEMENTS DYNAMIQUES D'UNE MEMOIRE ANALOGIQUEBUSSKIJ VI; MALEVICH IA.1976; PRIBORY TEKH. EKSPER.; S.S.S.R.; DA. 1976; NO 3; PP. 86-90; BIBL. 3 REF.Article

THE 64 K DYNAMIC R.A.M.YOUNG S.1980; NEW ELECTRON.; GBR; DA. 1980; VOL. 13; NO 14; PP. 47-48Article

DYNAMISCHE HALBLEITERSPEICHER MIT DREITRANSISTORZELLE = MEMOIRE DYNAMIQUE A SEMICONDUCTEURS UTILISANT UNE CELLULE A TROIS TRANSISTORSJORKE G.1978; RADIO FERNSEHEN ELEKTRON.; DDR; DA. 1978; VOL. 27; NO 10; PP. 649-652; BIBL. 3 REF.Article

TESTING LARGE DYNAMIC MEMORIES.FLANINGAM D.1976; IN: INT. ELECTRON. PACKAG. PROD. CONF. PROC. TECH. PROGRAMME; BRIGHTON, ENGL.; 1976; SURBITON; KIVER COMMUNICATIONS; DA. 1976; PP. 181-186Conference Paper

DYNAMIC R.A.M. TESTING IN THE 80 SBROWN D.1980; NEW ELECTRON.; ISSN 0047-9624; GBR; DA. 1980; VOL. 13; NO 20; PP. 140-142; 2 P.Article

SEMICONDUCTOR MEMORIESWILCOCK JD.1980; NEW ELECTRON.; GBR; DA. 1980; VOL. 13; NO 4; PP. 106-113; (5 P.)Article

THE EFFECT OF ALPHA-PARTICLE-INDUCED SOFT ERRORS ON MEMORY SYSTEMS WITH ERROR CORRECTIONNOORLAG DJW; TERMAN LM; KONHEIM AG et al.1980; IEEE J. SOLID-STATE CIRCUITS; ISSN 0018-9200; USA; DA. 1980; VOL. 15; NO 3; PP. 319-325; BIBL. 5 REF.Article

SINGLE-SUPPLY 16-K, 64-K RAMS SIMPLIFY UPGRADINGSMITH F; YU R.1980; ELECTRON. DESIGN; USA; DA. 1980; VOL. 28; NO 11; PP. 85-88Article

EINSATZ VON DYNAMISCHEN RAMS IN ARBEITSSPEICHERN = MISE EN OEUVRE DES MEMOIRES DYNAMIQUES A ACCES DIRECTWITTGRUBER F; HEINZERLING H.1980; ELEKTRONIK; DEU; DA. 1980; VOL. 29; NO 2; PP. 56-58; BIBL. 11 REF.Article

CIRCUITOS INTEGRADOS MOS DE MEMORIAS DINAMICAS.RODRIGUEZ CUBERO V.1976; REV. TELEGR. ELECTRON.; ARGENT.; DA. 1976; VOL. 65; NO 768; PP. 770-772Article

DESIGNING LOW NOISE DYNAMIC MEMORY SYSTEMS.CAREY BJ; GROSSMAN HS.1978; ELECTRON. PACKAG. PRODUCT.; USA; DA. 1978; VOL. 18; NO 4; PP. 109-114 (5P.)Article

PROPOSED PROCESS MODIFICATIONS FOR DYNAMIC BIPOLAR MEMORY TO REDUCE EMITTER-BASE LEAKAGE CURRENTANTIPOV I.1980; IEEE TRANS. ELECTRON. DEVICES; ISSN 0018-9383; USA; DA. 1980; VOL. 27; NO 8; PP. 1649-1654; BIBL. 14 REF.Article

A LIMITATION OF CHANNEL LENGTH IN DYNAMIC MEMORIESNISHIZAWA JI; OHMI T; HSIAO LIANG CHEN et al.1980; IEEE J. SOLID-STATE CIRCUITS; ISSN 0018-9200; USA; DA. 1980; VOL. 15; NO 4; PP. 705-714; BIBL. 26 REF.Article

A SILICON AND ALUMINIUM DYNAMIC MEMORY TECHNOLOGYLARSEN RA.1980; I.B.M. J. RES. DEVELOP.; USA; DA. 1980; VOL. 24; NO 3; PP. 268-282; BIBL. 49 REF.Article

K DYNAMIC RAN NEEDS ONLY ONE 5-VOLT SUPPLY TO OUTSTRIP 16-K PARTSMOHAN RAO GR; HEWKIN J.1978; ELECTRONICS; USA; DA. 1978; VOL. 51; NO 20; PP. 109-116; BIBL. 7 REF.Article

MEMORIESPOSA JG.1980; ELECTRONICS; ISSN 0013-5070; USA; DA. 1980; VOL. 53; NO 23; PP. 132-145; 8 P.Article

DYNAMISCHER 1-K-BIT-SPEICHER U 253 = MEMOIRE DYNAMIQUE A 1 K-BITE U 253KNOBLOCH J.1978; RADIO FERNSEHEN ELEKTRON.; DDR; DA. 1978; VOL. 27; NO 10; PP. 652-654Article

STANDARDS FOR DYNAMIC MOS RAMS ARE EMERGING. BUT AMONG EQUIVALENT PARTS, SOME ARE MORE EQUAL THAN OTHERS. STATIC-RAM STANDARDS LAG.FOSS RC; HARLAND R.1977; ELECTRON. DESIGN; U.S.A.; DA. 1977; VOL. 25; NO 17; PP. 66-70; BIBL. 1 REF.Article

A NEW VLSI MEMORY CELL USING DMOS TECHNOLOGY (DMOS CELL)TERADA K; TAKADA M; KUROSAWA S et al.1982; IEEE TRANS. ELECTRON DEVICES; ISSN 0018-9383; USA; DA. 1982; VOL. 29; NO 8; PP. 1301-1308; BIBL. 5 REF.Article

AN 8K X8 DYNAMIC RAM WITH SELF-REFRESHKUNG RI; FLANNAGAN ST; SPITZ JN et al.1982; IEEE JOURNAL OF SOLID-STATE CIRCUITS; ISSN 0018-9200; USA; DA. 1982; VOL. 17; NO 5; PP. 863-871; BIBL. 11 REF.Article

SCHEMA DES CIRCUITS INTEGRES BIPOLAIRES DYNAMIQUES DE MEMOIRE OPERATIVE DE GRANDE CAPACITEORLIKOVSKIJ AA; PODOPRIGORA NA.1979; MIKROELEKTRONIKA; SUN; DA. 1979; VOL. 8; NO 4; PP. 291-301; BIBL. 14 REF.Article

A 64 KBIT MOS DYNAMIC RANDOM ACCESS MEMORYNATORI K; OGURA M; IWAI H et al.1979; I.E.E.E. J. SOLID-STATE CIRCUITS; USA; DA. 1979; VOL. 14; NO 2; PP. 482-485; BIBL. 6 REF.Article

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