Novel germanium technology and devices for high performance mosfets and integrated on-chip optical clockingSARASWAT, Krishna C; CHI ON CHUI; MCINTYRE, Paul C et al.Proceedings - Electrochemical Society. 2003, pp 55-65, issn 0161-6374, isbn 1-56677-347-4, 11 p.Conference Paper

Charge trapping in high-dose Ge-implanted and Si-implanted silicon-dioxide thin filmsNAZAROV, A. N; OSIYUK, I. N; TYAGULSKII, I. P et al.Proceedings - Electrochemical Society. 2003, pp 144-149, issn 0161-6374, isbn 1-56677-347-4, 6 p.Conference Paper

Conduction modeling of thick double-layer nitride/oxide dielectricsEVSEEV, S.Proceedings - Electrochemical Society. 2003, pp 573-588, issn 0161-6374, isbn 1-56677-347-4, 16 p.Conference Paper

Analysis of short-channel mosfet behavior after gate oxide breakdown and its impact on digital circuit reliabilityGROESENEKEN, G; KACZER, B; DEGRAEVE, R et al.Proceedings - Electrochemical Society. 2003, pp 173-198, issn 0161-6374, isbn 1-56677-347-4, 26 p.Conference Paper

Properties of annealed silicon oxynitride layers for optical applicationsWÖRHOFF, K; HUSSEIN, G. M; ROELOFFZEN, C. G. H et al.Proceedings - Electrochemical Society. 2003, pp 406-417, issn 0161-6374, isbn 1-56677-347-4, 12 p.Conference Paper

Properties of ultrathin high-κ dielectrics on SI probed by electron spin resonance-active defects: Interfaces and interlayersSTESMANS; AFANAS'EV, V. V.Proceedings - Electrochemical Society. 2003, pp 66-78, issn 0161-6374, isbn 1-56677-347-4, 13 p.Conference Paper

Improved performance with low temperature silicon nitride spacer processREDDY, Chandra M; ANDERSON, Steven G. H.Proceedings - Electrochemical Society. 2003, pp 241-248, issn 0161-6374, isbn 1-56677-347-4, 8 p.Conference Paper

A review of defect generation in the SiO₂ and at its interface with SIZHANG, J. F.Proceedings - Electrochemical Society. 2003, pp 262-290, issn 0161-6374, isbn 1-56677-347-4, 29 p.Conference Paper

Atomistic characterization of radical nitridation process on Si(100) surfacesYASUDA, Yukio; SAKAI, Akira; ZAIMA, Shigeaki et al.Proceedings - Electrochemical Society. 2003, pp 495-506, issn 0161-6374, isbn 1-56677-347-4, 12 p.Conference Paper

A neutron reflectivity study of silicon oxide thin filmsBERTAGNA, Valérie; MENELLE, Alain; PETITDIDIER, Sébastien et al.Proceedings - Electrochemical Society. 2003, pp 525-532, issn 0161-6374, isbn 1-56677-347-4, 8 p.Conference Paper

Modeling and electrical characterization of MOS structures with ultra thin gate oxideCLERC, R; GHIBAUDO, G.Proceedings - Electrochemical Society. 2003, pp 551-572, issn 0161-6374, isbn 1-56677-347-4, 22 p.Conference Paper

Dipoles in SiO₂: Border traps or not?FLEETWOOD, D. M; RASHKEEV, S. N; LU, Z. Y et al.Proceedings - Electrochemical Society. 2003, pp 291-307, issn 0161-6374, isbn 1-56677-347-4, 17 p.Conference Paper

Si-SiO₂ interface trap properties and depedence with oxide thickness and with electrical stress in mosfets with oxides in the 1-2 nanometer rangeBAUZA, D; RAHMOUNE, F.Proceedings - Electrochemical Society. 2003, pp 22-38, issn 0161-6374, isbn 1-56677-347-4, 17 p.Conference Paper

Silicon nitride and silicon dioxide thin insulating films VII (Paris, 28 April - 2 May 2003)Sah, R.E; Deen, M.J; Landheer, D et al.Proceedings - Electrochemical Society. 2003, issn 0161-6374, isbn 1-56677-347-4, XII, 636 p, isbn 1-56677-347-4Conference Proceedings

Decoupled plasma nitridation of ultra-thin gate oxides for 60-90 nm technologiesBIDAUD, M; CARRERE, J-P; BOEUF, F et al.Proceedings - Electrochemical Society. 2003, pp 517-524, issn 0161-6374, isbn 1-56677-347-4, 8 p.Conference Paper

Atomic, electronic structure and charge transport mechanism in silicon nitride and oxynitrideGRITSENKO, Vladimir A; NASYROV, Kamil A.Proceedings - Electrochemical Society. 2003, pp 507-516, issn 0161-6374, isbn 1-56677-347-4, 10 p.Conference Paper

Eletrical properties and the reliability of silicon nitride gate dielectrics formed by various processes and annealing treatmentsCHANG-LIAO, Kuei-Shu; PAN, J. Y; CHENG, C. L et al.Proceedings - Electrochemical Society. 2003, pp 315-327, issn 0161-6374, isbn 1-56677-347-4, 13 p.Conference Paper

Low-temperature oxidation for gate dielectrics of poly-Si TFTs using high-density surface wave plasmaAZUMA, Kazufumi; GOTO, Masashi; OKAMOTO, Tetsuya et al.Proceedings - Electrochemical Society. 2003, pp 614-621, issn 0161-6374, isbn 1-56677-347-4, 8 p.Conference Paper

Predictive simulation of void formation during the deposition of silicon nitride and silicon dioxide filmsHEITZINGER, C; SHEIKHOLESLAMI, A; PUCHNER, H et al.Proceedings - Electrochemical Society. 2003, pp 356-365, issn 0161-6374, isbn 1-56677-347-4, 10 p.Conference Paper

Plasma damage in ultra-thin gate oxide induced by dielectric deposition processes: An overview on main mechanisms and characterization techniquesCARRERE, Jean-Pierre; OBERLIN, Jean-Claude; BRUYERE, Sylvie et al.Proceedings - Electrochemical Society. 2003, pp 433-451, issn 0161-6374, isbn 1-56677-347-4, 19 p.Conference Paper

Rapid thermal and anodic oxidations of lpcvd silicon nitride filmsLIN, Yen-Po; HWU, Jenn-Gwo.Proceedings - Electrochemical Society. 2003, pp 533-540, issn 0161-6374, isbn 1-56677-347-4, 8 p.Conference Paper

Recovery and reversibility of electrical instabilities in double-layer dielectric filmsEVSEEV, S; CACCIATO, A.Proceedings - Electrochemical Society. 2003, pp 605-613, issn 0161-6374, isbn 1-56677-347-4, 9 p.Conference Paper

Characteristics of metal gate mos capacitor with hafnium oxynitride thinCHOI, Kyu-Jeong; YOON, Soon-Gil.Proceedings - Electrochemical Society. 2003, pp 139-143, issn 0161-6374, isbn 1-56677-347-4, 5 p.Conference Paper

New reliability issues of CMOS transistors with 1.3 nm thick gate oxideLI, M. F; CHO, B. J; CHEN, G et al.Proceedings - Electrochemical Society. 2003, pp 228-240, issn 0161-6374, isbn 1-56677-347-4, 13 p.Conference Paper

Cathodoluminescence of thin films of silicon oxide on siliconZAMORYANSKAYA, M. V; SOKOLOV, V. I; KOTINA, I. M et al.Proceedings - Electrochemical Society. 2003, pp 348-355, issn 0161-6374, isbn 1-56677-347-4, 8 p.Conference Paper