kw.\*:("Defect clusters")
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The fractal approach for the evaluation of microdefects in siliconFEDTCHOUK, A. P; RUDENKO, R. A; SHEVCHENKO, L. D et al.Materials science & engineering. B, Solid-state materials for advanced technology. 1995, Vol 34, Num 2-3, pp 164-167, issn 0921-5107Article
Theory of nucleation with cluster loss and injection : Application to plastic deformation and irradiationRUSSELL, K. C.Metallurgical and materials transactions. A, Physical metallurgy and materials science. 1996, Vol 27, Num 6, pp 1441-1448, issn 1073-5623Conference Paper
Multiscale modelling of radiation damage in metals: from defect generation to material propertiesBACON, D. J; OSETSKY, Yu. N.Materials science & engineering. A, Structural materials : properties, microstructure and processing. 2004, Vol 365, Num 1-2, pp 46-56, issn 0921-5093, 11 p.Conference Paper
Self-implantation of Cz-Si : Clustering and annealing of defectsABDULMALIK, D. A; COLEMAN, P. G; AL-QARADAWI, I. Y et al.Applied surface science. 2006, Vol 252, Num 9, pp 3209-3214, issn 0169-4332, 6 p.Conference Paper
Distribution of damage clusters in ion-implanted siliconBENNETT, D. J; PRICE, T. E.Semiconductor science and technology. 1993, Vol 8, Num 8, pp 1496-1500, issn 0268-1242Article
Defect-related photoluminescence in indium-implanted siliconTERASHIMA, Koichi; HORIKAWA, Mitsuhiro.Physica. B, Condensed matter. 2007, Vol 401-02, pp 134-137, issn 0921-4526, 4 p.Conference Paper
COALESCENCE IN A GAZ FILLED PORE AND DISLOCATION LOOP SYSTEMSLEZOV VV; TIKHONOV EF; KHUSAINOV MA et al.1982; METALLOFIZIKA (KIEV); ISSN 0204-3580; UKR; DA. 1982; VOL. 4; NO 5; PP. 3-7; BIBL. 6 REF.Article
LES CHAMPS DE CONTRAINTE AUTOUR DES DEFAUTS DU TYPE AMAS DE DISLOCATIONS DANS LES CRISTAUX ISOTROPES ET ANISOTROPESSOLOV'EV VA; SACHKO VN.1976; KRISTALLOGRAFIJA; S.S.S.R.; DA. 1976; VOL. 21; NO 5; PP. 877-884; BIBL. 13 REF.Article
Clustering of topological defects in superheated metalsDELOGU, F.Materials science & engineering. A, Structural materials : properties, microstructure and processing. 2006, Vol 416, Num 1-2, pp 33-39, issn 0921-5093, 7 p.Article
An atomically accurate model for point defect aggregation in siliconSINNO, T; HAECKL, W; VON AMMON, W et al.Proceedings - Electrochemical Society. 2006, pp 77-88, issn 0161-6374, isbn 1-56677-439-X, 1Vol, 12 p.Conference Paper
Pressure dependence of the melting mechanism at the limit of overheating in Lennard-Jones crystalsGOMEZ, L; GAZZA, C; DACHARRY, H et al.Physical review B. Condensed matter and materials physics. 2005, Vol 71, Num 13, pp 134106.1-134106.6, issn 1098-0121Article
Radiation-induced aggregation of elemental defects in NaF-U, Me crystals caused by irradiation with helium ions and electronsSATYBALDIEVA, M. K; BELYKH, T. A; SHULGIN, B. V et al.Fizika i himiâ obrabotki materialov. 2000, Num 5, pp 5-8, issn 0015-3214Article
Quantitative analysis of degradation in Schottky diode characteristics induced by single ion implantationKOYAMA, M; AKITA, Y; CHEONG, C et al.Applied surface science. 1996, Vol 104-05, pp 253-256, issn 0169-4332Conference Paper
Cascade damage formation in gold under self-ion irradiationSEKIMURA, N; KANZAKI, Y; OKADA, S. R et al.Journal of nuclear materials. 1994, Vol 212-15, Num A, pp 160-163, issn 0022-3115Conference Paper
Determination of defects in 6H-SiC single crystals irradiated with 20 MeV Au ionsGENTILS, A; BARTHE, M.-F; THOME, L et al.Applied surface science. 2008, Vol 255, Num 1, pp 78-80, issn 0169-4332, 3 p.Article
Vacancy-impurity nanoclusters in solid solutions of 3He-4HePUSHKAROV, Dimitar I.Physical review B. Condensed matter and materials physics. 2004, Vol 70, Num 17, pp 172506.1-172506.4, issn 1098-0121Article
Cluster formation and growth in Si ion implanted c-SiLIBERTINO, S; COFFA, S; SPINELLA, C et al.Materials science & engineering. B, Solid-state materials for advanced technology. 2000, Vol 71, Num 1-3, pp 137-142, issn 0921-5107Conference Paper
Defect clustering in wüstiteMINERVINI, L; GRIMES, R. W.The Journal of physics and chemistry of solids. 1999, Vol 60, Num 2, pp 235-245, issn 0022-3697Article
Two types of meta-crystals for IV group elements: Density functional theory calculationsJIANBAO WU; WEIYI ZHANG; YIMING MI et al.Physica. B, Condensed matter. 2013, Vol 410, pp 17-21, issn 0921-4526, 5 p.Article
Agglomeration of As antisites in As-rich low-temperature GaAs : Nucleation without a critical nucleus sizeSTAAB, T. E. M; NIEMINEN, R. M; LUYSBERG, M et al.Physical review letters. 2005, Vol 95, Num 12, pp 125502.1-125502.4, issn 0031-9007Article
Interstitial-carbon-related defects in relaxed SiGe alloy : the effect of alloyingMESLI, A; LARSEN, A. Nylandsted.Journal of physics. Condensed matter (Print). 2005, Vol 17, Num 22, pp S2170-S2184, issn 0953-8984Conference Paper
Polytypic arrangements of cuboctahedral oxygen clusters in U3O7NOWICKI, L; GARRIDO, F; TUROS, A et al.The Journal of physics and chemistry of solids. 2000, Vol 61, Num 11, pp 1789-1804, issn 0022-3697Article
Critical concentrations of cumulative scattered damageIGNATOVICH, S. R.Strength of materials. 1995, Vol 27, Num 4, pp 219-224, issn 0039-2316Article
The influence of ion irradiation intensity on defects clasters formationELESIN, V. F; ZHABREV, G. I; TIMOFEEV, A. A et al.Fizika i himiâ obrabotki materialov. 1994, Num 6, pp 5-8, issn 0015-3214Article
Structural relaxation of point defect clusters in pure CuSHIMOMURA, Y; NISHIGUCHI, R; DIAZ DE LA RUBIA, T et al.Radiation effects and defects in solids. 1994, Vol 129, Num 1-2, pp 81-89, issn 1042-0150Conference Paper