kw.\*:("Defect density")
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X-ray photoelectron spectroscopy and positron annihilation spectroscopy analysis of surfactant affected FePt spintronic filmsCHUN FENG; XUJING LI; GUANGHUA YU et al.Applied surface science. 2014, Vol 308, pp 408-413, issn 0169-4332, 6 p.Article
The impact of the nanoscale on computing systemsGOLDSTEIN, Seth Copen.IEEE/ACM International Conference on Computer-Aided Design. 2005, pp 655-661, isbn 0-7803-9254-X, 1Vol, 7 p.Conference Paper
Impact of particles in ultra pure water on random yield loss in IC productionWALI, Faisal; KNOTTER, D. Martin; MUD, Auke et al.Microelectronic engineering. 2009, Vol 86, Num 2, pp 140-144, issn 0167-9317, 5 p.Conference Paper
Characterization of defect density created by stress in the gate to drain overlap region using GIDL current model in n-channel MOSFETMAOUHOUB, N; RAIS, K.Journal of computational electronics (Print). 2011, Vol 10, Num 1-2, pp 141-143, issn 1569-8025, 3 p.Article
A Novel Wafer-Yield PDF Model and Verification With 90-180-nm SOC Chips : Maximizing operational efficiencies at the leading edgeMASUDA, Hiroo; TSUNOZAKI, Manabu; TSUTSUI, Toshikazu et al.IEEE transactions on semiconductor manufacturing. 2008, Vol 21, Num 4, pp 585-591, issn 0894-6507, 7 p.Conference Paper
SEMATECH Mask ProgramYUN, Henry; RASTEGAR, Abbas; KEARNEY, Patrick et al.Proceedings of SPIE, the International Society for Optical Engineering. 2009, Vol 7470, issn 0277-786X, isbn 978-0-8194-7770-5 0-8194-7770-2, 1Vol, 747005.1-747005.4Conference Paper
Effect of ramping anneals under inert or oxidizing ambient on the formation of oxygen precipitate denuded zone in nitrogen-doped Czochralski silicon wafersXIANGYANG MA; DAXI TIAN; LONGFEI GONG et al.Physica status solidi. A, Applications and materials science (Print). 2006, Vol 203, Num 8, pp 1934-1939, issn 1862-6300, 6 p.Article
CAEN-BIST : Testing the nanofabricBROWN, Jason G; BLANTON, R. D.International Test Conference. 2004, pp 462-471, isbn 0-7803-8580-2, 1Vol, 10 p.Conference Paper
Ab-initio statistical mechanics for ordered compounds: single-defect theory vs. cluster-expansion techniquesDRAUTZ, R; SCHULTZ, I; LECHERMANN, F et al.Physica status solidi. B. Basic research. 2003, Vol 240, Num 1, pp 37-44, issn 0370-1972, 8 p.Article
Atomistic mechanisms of fatigue in nanocrystalline metalsFARKAS, D; WILLEMANN, M; HYDE, B et al.Physical review letters. 2005, Vol 94, Num 16, pp 165502.1-165502.4, issn 0031-9007Article
Preparation of microcrystalline silicon films at ultra high-rate of 10 nm/s using high-density plasmaNIIKURA, Chisato; KONDO, Michio; MATSUDA, Akihisa et al.Journal of non-crystalline solids. 2004, Vol 338-40, pp 42-46, issn 0022-3093, 5 p.Conference Paper
Percolation study of defect tolerance in missing-crossbar networksZWOLAK, Michael P; ZALLEN, Richard; DI VENTRA, Massimiliano et al.Solid state communications. 2002, Vol 124, Num 5-6, pp 167-170, issn 0038-1098, 4 p.Article
A criterion for the formation of stacking faults at incoherent spheroidal precipitates and application to silicon oxide in siliconVANHELLEMONT, Jan; DE GRYSE, Olivier; CLAUWS, Paul et al.Physica status solidi. A, Applications and materials science (Print). 2006, Vol 203, Num 10, pp 2341-2346, issn 1862-6300, 6 p.Article
Anderson localization in carbon nanotubes : Defect density and temperature effectsBIEL, Blanca; GARCIA-VIDAL, F. J; RUBIO, Angel et al.Physical review letters. 2005, Vol 95, Num 26, pp 266801.1-266801.4, issn 0031-9007Article
Gettering of Cu and Ni impurities in SIMOX wafersJABLONSKI, J; MIYAMURA, Y; IMAI, M et al.Journal of the Electrochemical Society. 1995, Vol 142, Num 6, pp 2059-2066, issn 0013-4651Article
Nondestructive detection of microvoids at the interface of direct bonded silicon wafers by scanning infrared microscopyKHANH, N. Q; HAMORI, A; FRIED, M et al.Journal of the Electrochemical Society. 1995, Vol 142, Num 7, pp 2425-2429, issn 0013-4651Article
Defect concentration measurements in solids using a lyoluminescence methodAVOTINSH, YU. E; DZELME, YU. R; TILIKS, YU. YE et al.The International journal of applied radiation and isotopes. 1985, Vol 36, Num 10, pp 789-791, issn 0020-708XArticle
Calcul des capacités calorifiques de l'argon cristallin par la méthode de la dynamique moléculaire dans l'ensemble N, P, TASHUROV, A. K; ADKHAMOV, A. A.Žurnal fizičeskoj himii. 1985, Vol 59, Num 5, pp 1286-1287, issn 0044-4537Article
The effects of wafer to wafer defect density variations on integrated circuit defect and fault distributionsSTAPPER, C. H.IBM journal of research and development. 1985, Vol 29, Num 1, pp 87-97, issn 0018-8646Article
Cause of the fill factor loss of a-Si:H p-i-n devices with ZnO:Al front electrode: Blocking contact vs. defect densitySANTOS, J. D; FERNANDEZ, S; CARABE, J et al.Thin solid films. 2013, Vol 548, pp 617-622, issn 0040-6090, 6 p.Article
A comparative study of the electronic stability of hydrogenated amorphous silicon and silicon-germanium alloy materialSCHNEIDER, U; SCHOLZ, A; SCHRODER, B et al.Japanese journal of applied physics. 1991, Vol 30, Num 2, pp 228-232, issn 0021-4922, 5 p., 1Article
Effect of porous silicon on the performances of silicon solar cells during the porous silicon-based gettering procedureNOURI, H; BOUAÏCHA, M; BESSAÏS, B et al.Solar energy materials and solar cells. 2009, Vol 93, Num 10, pp 1823-1826, issn 0927-0248, 4 p.Article
Nanocrystalline silicon : A material for thin film solar cells with better stabilityMUKHOPADHYAY, Sumita; CHOWDHURY, Amartya; RAY, Swati et al.Thin solid films. 2008, Vol 516, Num 20, pp 6824-6828, issn 0040-6090, 5 p.Conference Paper
Transport properties of electrodeposited epitaxial Ni(111) films on GaAs(110) with low defect densityVUTUKURI, Sreenivasulu; SCHAD, Rainer; LECLAIR, Patrick et al.Thin solid films. 2014, Vol 564, pp 412-414, issn 0040-6090, 3 p.Article
Charge carrier transport anisotropy in ultrananocrystalline diamond filmsROSSI, M. C; MINUTELLO, A; CARTA, S et al.Diamond and related materials. 2010, Vol 19, Num 2-3, pp 238-241, issn 0925-9635, 4 p.Conference Paper